Steven M. George

ORCID: 0000-0003-0253-9184
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About
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Research Areas
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Catalytic Processes in Materials Science
  • Advanced Chemical Physics Studies
  • Copper Interconnects and Reliability
  • nanoparticles nucleation surface interactions
  • Silicon Nanostructures and Photoluminescence
  • Advancements in Battery Materials
  • ZnO doping and properties
  • Metal and Thin Film Mechanics
  • Diamond and Carbon-based Materials Research
  • Gas Sensing Nanomaterials and Sensors
  • Nanowire Synthesis and Applications
  • Plasma Diagnostics and Applications
  • Ion-surface interactions and analysis
  • Supercapacitor Materials and Fabrication
  • Thin-Film Transistor Technologies
  • Atmospheric Ozone and Climate
  • Atmospheric chemistry and aerosols
  • Electron and X-Ray Spectroscopy Techniques
  • Analytical Chemistry and Sensors
  • Advanced Battery Materials and Technologies
  • Acoustic Wave Resonator Technologies
  • Spectroscopy and Laser Applications
  • Molecular Junctions and Nanostructures

University of Colorado Boulder
2016-2025

University of Colorado System
2011-2025

Aalto University
2022

University College Cork
2022

Lam Research (United States)
2020-2021

University of Helsinki
2020-2021

United States Naval Research Laboratory
2021

Western Digital (United States)
2021

Sandia National Laboratories
2020

Eindhoven University of Technology
2020

Al2O3 films were deposited by atomic layer deposition (ALD) at temperatures as low 33 °C in a viscous-flow reactor using alternating exposures of Al(CH3)3 (trimethylaluminum [TMA]) and H2O. Low-temperature ALD have the potential to coat thermally fragile substrates such organic, polymeric, or biological materials. The properties low-temperature investigated versus growth temperature depositing on Si(100) quartz crystal microbalance (QCM) sensors. film thicknesses, rates, densities, optical...

10.1021/cm0304546 article EN Chemistry of Materials 2004-01-30

Atomic layer controlled film growth is an important technological and scientific goal that closely tied to many issues in surface chemistry. This article first reviews the basic concepts of atomic using molecular precursors binary reaction sequence Many examples are given for various films have been grown this technique. The paradigms epitaxy (ALE) processing (ALP) then discussed terms self-limiting reactions. Recent investigations chemistry SiO2 Al2O3 ALP GaAs ALE examined used illustrate...

10.1021/jp9536763 article EN The Journal of Physical Chemistry 1996-01-01

Anodic alumina (AA) membranes are composed of highly uniform, nanometer-scale pores arranged in a hexagonal close-packed array. Depositing conformal films inside the nanopores is extremely difficult because have an ultrahigh aspect ratio L/d ≈ 103. Atomic layer deposition (ALD) thin film growth technique that can deposit uniform on high-aspect-ratio substrates with monolayer thickness control. In this study, AA were coated Al2O3 and ZnO ALD subsequently analyzed using cross-sectional...

10.1021/cm0303080 article EN Chemistry of Materials 2003-08-14

Hydrogen desorption kinetics from monohydride and dihydride species on crystalline-silicon surfaces were measured using transmission Fourier-transform infrared (FTIR) spectroscopy. The FTIR measurements performed in situ an ultrahigh-vacuum chamber high-surface-area porous-silicon samples. for hydrogen the was monitored SiH stretch mode at 2102 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ ${\mathrm{SiH}}_{2}$ scissors 910 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, respectively. Annealing...

10.1103/physrevb.37.8234 article EN Physical review. B, Condensed matter 1988-05-15

A chemical reactor was constructed for growing thin films using atomic layer deposition (ALD) techniques. This utilizes a viscous flow of inert carrier gas to transport the reactants sample substrates and sweep unused reaction products out zone. pulse switching method is employed introducing reactants. An in situ quartz crystal microbalance (QCM) zone used monitoring ALD film growth. By modifying commercially available QCM housing polished sensors, quantitative thickness measurements grown...

10.1063/1.1490410 article EN Review of Scientific Instruments 2002-08-01

Direct atomic layer deposition (ALD) on composite electrodes leads to ultrathin conformal protective coatings without disrupting inter-particle electronic pathways. Al2O3-coated natural graphite (NG) obtained by direct ALD the as-formed electrode show exceptionally durable capacity retention even at an elevated temperature of 50 °C. In sharp contrast, powder results in poorer cycle than bare NG. Detailed facts importance specialist readers are published as ”Supporting Information”. Such...

10.1002/adma.200903951 article EN Advanced Materials 2010-04-07

Quantitative Ca tests were used to determine the water vapor transmission rate (WVTR) through 25nm thick Al2O3 gas diffusion barriers grown on plastic by atomic layer deposition (ALD). The measured WVTRs 1.7×10−5g∕m2day at 38°C and 6.5×10−5g∕m2day 60°C. Based apparent activation energy, WVTR 23°C is estimated be only 6×10−6g∕m2day. values for ALD film are very similar value glass control. These indicate that should enable display lighting applications of highly moisture sensitive organic...

10.1063/1.2221912 article EN Applied Physics Letters 2006-07-17

Abstract Fe 3 O 4 nanocrystals confined in mesocellular carbon foam (MSU‐F‐C) are synthesized by a “ host–guest ” approach and tested as an anode material for lithium‐ion batteries (LIBs). Briefly, iron oxide precursor, Fe(NO ) ·9H 2 O, is impregnated MSU‐F‐C having uniform cellular pores ∼30 nm dia­meter, followed heat‐treatment at 400 °C h under Ar. Magnetite with sizes between 13–27 then successfully fabricated inside the of MSU‐F‐C, confirmed transmission electron microscopy (TEM),...

10.1002/adfm.201002576 article EN Advanced Functional Materials 2011-04-26

Nucleation and growth during Al2O3 atomic layer deposition (ALD) were explored on a variety of polymer films at 85 °C. ALD was performed using sequential exposures Al(CH3)3 [trimethylaluminum (TMA)] H2O. The polystyrene (PS), polypropylene (PP), poly(methyl methacrylate) (PMMA), polyethylene (PE), poly(vinyl chloride) (PVC). These prepared by spin-coating onto the surface quartz crystal microbalance (QCM) sensor or Si(100) wafer. TMA H2O monitored in situ various polymers QCM. QCM...

10.1021/cm050704d article EN Chemistry of Materials 2005-10-13

Thin films of Al2O3 grown by atomic layer deposition (ALD) were investigated as gas diffusion barriers on flexible polyethylene naphthalate and Kapton® polyimide substrates. ALD with thicknesses 1–26nm at 100–175°C. For ⩾5nm, oxygen transmission rates below the MOCON instrument test limit ∼5×10−3cc∕m2∕day. Applying a more sensitive radioactive tracer method, H2O-vapor ∼1×10−3g∕m2∕day measured for single-sided 26nm polymers. Ultrathin may enable organic displays electronics permeable, polymer

10.1063/1.2168489 article EN Applied Physics Letters 2006-01-30

To deploy Li-ion batteries in next-generation vehicles, it is essential to develop electrodes with durability, high energy density, and power. Here we report a breakthrough controlled full-electrode nanoscale coatings that enables nanosized materials cycle durable remarkable rate performance. The nanoparticle are coated Al(2)O(3) using atomic layer deposition (ALD). nano-LiCoO(2) 2 ALD cycles deliver discharge capacity of 133 mAh/g currents 1400 mA/g (7.8C), corresponding 250% improvement...

10.1021/nl1030198 article EN Nano Letters 2010-12-17

The fabrication of many devices in modern technology requires techniques for growing thin films. As miniaturize, manufacturers will need to control film growth at the atomic level. Because have challenging morphologies, films must be able coat conformally on structures with high aspect ratios. Techniques based layer deposition (ALD), a special type chemical vapor deposition, allow ultra-thin and conformal inorganic materials using sequential, self-limiting reactions. Molecular (MLD) methods...

10.1021/ar800105q article EN Accounts of Chemical Research 2009-02-27

Single Al2O3 atomic layer deposition (ALD) films on polymers have demonstrated excellent gas diffusion barrier properties. Further improvements can be achieved using multilayers of ALD layers with other inorganic layers. In this study, and rapid SiO2 were grown Kapton heat-stabilized polyethylene naphthalate substrates. Transmission rates for tritium through the measured radioactive HTO tracer method. Comparison previous Ca tests exchange experiments alcohols indicated that in may diffuse as...

10.1021/jp076866+ article EN The Journal of Physical Chemistry C 2008-03-01

Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback ALD its low rate, making less attractive for applications that require high throughput processing. An approach to overcome this spatial ALD, i.e., an mode where the half-reactions are separated spatially instead through use purge steps. This allows rate and without compromising typical assets. paper gives perspective past current developments...

10.1116/1.3670745 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2011-12-14

Ultrathin atomic layer deposition (ALD) coatings enhance the performance of lithium-ion batteries (LIBs). Previous studies have demonstrated that cathode powders coated with metal oxides thicknesses to grown using wet chemical techniques improved LIB performance. In this study, were conformal ALD films only established two cycles. The exhibited a capacity retention 89% after 120 charge–discharge cycles in 3.3–4.5 V (vs ) range. contrast, bare displayed 45% retention. directly on composite...

10.1149/1.3258274 article EN Journal of The Electrochemical Society 2009-12-04

Polymeric films can be grown by a sequential, self-limiting surface chemistry process known as molecular layer deposition (MLD). The MLD reactants are typically bifunctional monomers for stepwise condensation polymerization and yield completely organic films. of organic–inorganic hybrid polymers also accomplished using monomer multifunctional inorganic monomer. In this work, the growth poly(aluminum ethylene glycol) polymer is demonstrated sequential exposures trimethylaluminum (TMA) glycol...

10.1021/cm7032977 article EN Chemistry of Materials 2008-04-29

The atomic layer deposition (ALD) of Al2O3 using sequential exposures Al(CH3)3 and O3 was studied by in situ transmission Fourier transform infrared (FTIR) spectroscopy quadrupole mass spectrometry (QMS). FTIR investigations the surface reactions occurring during ALD were performed on ZrO2 particles for temperatures from 363 to 650 K. spectra after ozone showed that exposure removes AlCH3* species. species converted AlOCH3* (methoxy), Al(OCHO)* (formate), Al(OCOOH)* (carbonate), AlOH*...

10.1021/jp804296a article EN The Journal of Physical Chemistry C 2008-11-13

Al(2)O(3) and TiO(2) atomic layer deposition (ALD) were employed to develop an ultrathin barrier film on copper prevent water corrosion. The strategy was utilize ALD as a pinhole-free protect the using ALD. An initial set of experiments performed at 177 °C establish that could nucleate produce high-quality film. In situ quartz crystal microbalance (QCM) measurements verified nucleated grew efficiently copper-plated crystals trimethylaluminum (TMA) reactants. electroplating technique also...

10.1021/am2009579 article EN ACS Applied Materials & Interfaces 2011-10-27

The areal capacity of nanowire-based microbatteries can be potentially increased by increasing the length nanowires. However, agglomeration high aspect ratio nanowire arrays could greatly degrade performance nanowires for lithium ion (Li-ion) battery applications. In this work, a three-dimensional (3-D) Ni/TiO2 network was successfully fabricated using 3-D porous anodic alumina (PAA) template-assisted electrodeposition Ni followed TiO2 coating atomic layer deposition. Compared to straight...

10.1021/nl203434g article EN Nano Letters 2011-12-30

Abstract Atomic layer deposition (ALD) of Al 2 O 3 is applied on a polypropylene separator for lithium‐ion batteries. A thin (<10 nm) coated every surface the porous polymer microframework without significantly increasing total thickness. The ALD coating results in suppressed thermal shrinkage, which may lead to improved safety More importantly, wettability ALD‐coated separators an extremely polar electrolyte based pure propylene carbonate (PC) solvent demonstrated, any decrease...

10.1002/aenm.201100750 article EN Advanced Energy Materials 2012-04-27

Abstract The performance of Al 2 O 3 atomic layer deposition (ALD) coatings for LiCoO /natural graphite (LCO/NG) batteries is investigated, where various permutations the electrodes are coated in a full battery. Coating both with ∼1 nm alumina as well coating only LCO (positive electrode) enables improved when cycling at high voltage, known to degrade. However, we found that NG (negative also improves whole battery voltage. Under these conditions, uncoated should degrade quickly, and be...

10.1002/aenm.201200370 article EN Advanced Energy Materials 2012-09-13
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