Ed Gerstner

ORCID: 0000-0003-0369-0767
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About
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Research Areas
  • Diamond and Carbon-based Materials Research
  • Ion-surface interactions and analysis
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Thin-Film Transistor Technologies
  • Silicon Nanostructures and Photoluminescence
  • Carbon Nanotubes in Composites
  • High-pressure geophysics and materials
  • Silicon and Solar Cell Technologies
  • Vacuum and Plasma Arcs
  • Cold Atom Physics and Bose-Einstein Condensates
  • Advanced Memory and Neural Computing
  • Fullerene Chemistry and Applications
  • Semiconductor materials and interfaces
  • Graphene research and applications
  • Plasma Diagnostics and Applications
  • Laser-Plasma Interactions and Diagnostics
  • Advanced Thermodynamics and Statistical Mechanics
  • Magnetic properties of thin films
  • Integrated Circuits and Semiconductor Failure Analysis
  • Planetary Science and Exploration
  • Quantum Electrodynamics and Casimir Effect
  • Molecular Junctions and Nanostructures
  • Polymer Nanocomposite Synthesis and Irradiation
  • Random lasers and scattering media

The Nature Conservancy
2006-2007

University of Surrey
2000-2004

The University of Sydney
1995-2002

10.1038/446016a article EN Nature 2007-02-28

Tetrahedral amorphous carbon (ta-C) is a dense form of with structure consisting highly tetrahedral bonding network. Approximately 20% the atoms in ta-C are ${\mathit{sp}}^{2}$ hybridized and presence these sites plays an important role electrical optical properties material. In present investigation, we use 50 keV ${\mathrm{C}}^{+}$ 200 ${\mathrm{Xe}}^{+}$ ion implantation to damage controlled manner. The following irradiation monitored using dose dependence conductivity, Raman...

10.1103/physrevb.52.850 article EN Physical review. B, Condensed matter 1995-07-01

The thin-film transistor is one of a family field-effect transistors. They all operate in the same way: gate modulates conductance channel and current saturates when drain end depleted carriers. authors introduce source-gated that overcomes some fundamental limitations transistor. controls supply carriers source result can at lower voltages with larger gains power dissipation. It should also preserve its characteristics smaller dimensions.

10.1109/led.2003.813379 article EN IEEE Electron Device Letters 2003-06-01

Carbon nitride materials have been the focus of research efforts worldwide. Most studied amorphous, with only a few groups claiming to found crystalline material. We investigate structure amorphous carbon solids produced by two different techniques: cathodic arc deposition and high dose nitrogen implantation glassy carbon. Transmission electron microscopy, energy loss spectroscopy, filtered diffraction, Rutherford backscattering, infrared, Raman spectroscopy are all used derive structural...

10.1063/1.361515 article EN Journal of Applied Physics 1996-05-01

10.1016/j.sse.2004.02.004 article EN Solid-State Electronics 2004-03-20

Tetrahedral amorphous carbon deposited by a filtered cathodic arc has very high unpaired electron spin density of around ${10}^{20}$--${10}^{21}$ spin/g (c.f. ${10}^{18}$--${10}^{20}$ for a-Si and a-Ge). Trap states associated with such spins have detrimental effect on the electronic properties both silicon germanium it is therefore desirable to reduce them in tetrahedral (ta-C). In this paper, we report negative substrate bias, applied during deposition, resonance (ESR) ta-C films their...

10.1103/physrevb.54.14504 article EN Physical review. B, Condensed matter 1996-11-15

Electrical measurements of nitrogen doped tetrahedral amorphous carbon (ta-C:N) thin films have revealed a reversible nonvolatile memory effect, related to the excitation and de-excitation electrons between deep acceptor states shallow donor within mobility gap. This effect is characterized by changes in small signal film conductivity up 10 times, has been used fabricate 1-bit cells with effective retention times order several months.

10.1063/1.368824 article EN Journal of Applied Physics 1998-11-15

A method of improving the adhesion carbon thin films deposited using a cathodic vacuum arc by use implantation at energies up to 20 keV is described. detailed analysis onto silicon in this way carried out complementary techniques transmission electron microscopy and x-ray photoelectron spectroscopy (XPS) presented. This shows that an amorphous mixing layer consisting formed between grown pure film crystalline substrate. In layer, it shown some chemical bonding occurs silicon. Damage...

10.1116/1.579372 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 1995-03-01

10.1038/nphys779 article EN Nature Physics 2007-10-09

10.1038/nphys1927 article EN Nature Physics 2011-02-01

10.1038/nphys1454 article EN Nature Physics 2009-10-06

10.1038/nphys1785 article EN Nature Physics 2010-09-01

10.1016/0022-3093(95)00221-9 article EN Journal of Non-Crystalline Solids 1995-09-01

Abstract It has previously been shown that ion beams may be used to provide useful modifications the properties of polymers. For example, it found hydrogen and argon large increases in hardness polymer CR39, a polycarbonate extensively optical applications. In this paper we report structural effects ion-beam modification determined using Fourier transform infrared reflectance spectroscopy, cross-sectional electron microscopy, energy-dispersive X-ray spectroscopy electron-energy-loss...

10.1080/01418619908210305 article EN Philosophical Magazine A 1999-02-01

Filtering of plasmas by curved solenoidal ducts is well established as a method removing macroparticles. By analyzing the interactions planar probes with drifting plasma cathodic arc, new insights have been obtained into operation these ducts. Theoretical modeling suggests, and experiment confirms, that use separate biased electrode on inside duct gives enhanced transmission without drawing excessive electron current. negatively lying parallel to drift velocity both show ions are captured...

10.1109/27.640680 article EN IEEE Transactions on Plasma Science 1997-01-01

10.1038/news020722-2 article EN Nature 2002-07-23

Compensated back-channel inverted staggered TFTs have been made in a-Si:H. Donor impurities were implanted to form a good source and drain ohmic contact followed by an acceptor implant compensate the channel region. with no degradation of mobility due implants leakage current between comparable best using conventional etched technology.

10.1109/led.2002.807017 article EN IEEE Electron Device Letters 2003-01-01

10.1038/nphys1048 article EN Nature Physics 2008-08-01

10.1038/nphys906 article EN Nature Physics 2008-03-01
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