Shyam Trivedi

ORCID: 0000-0003-0391-7191
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About
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Research Areas
  • Acoustic Wave Resonator Technologies
  • Mechanical and Optical Resonators
  • Advanced MEMS and NEMS Technologies
  • Metal and Thin Film Mechanics
  • Molecular Junctions and Nanostructures
  • Ultrasonics and Acoustic Wave Propagation
  • Photonic and Optical Devices
  • Adhesion, Friction, and Surface Interactions
  • Advanced Measurement and Metrology Techniques
  • Graphene research and applications
  • Advanced machining processes and optimization
  • Advanced Electrical Measurement Techniques
  • Energy Harvesting in Wireless Networks
  • Chemical and Physical Properties of Materials
  • Advanced Welding Techniques Analysis
  • Wireless Power Transfer Systems
  • Ship Hydrodynamics and Maneuverability
  • Surface Chemistry and Catalysis
  • Semiconductor materials and devices
  • Advanced Sensor Technologies Research
  • Advanced Surface Polishing Techniques
  • GaN-based semiconductor devices and materials
  • Advanced Fiber Optic Sensors
  • Iterative Learning Control Systems
  • Fluid dynamics and aerodynamics studies

Agency for Science, Technology and Research
2023-2025

Institute of Microelectronics
2023-2025

AU Optronics (Taiwan)
2022

National Tsing Hua University
2020-2021

Indian Institute of Technology Guwahati
2015-2019

Department of Physics, Maulana Azad National Institute Technology (MANIT), Bhopal 462051, IndiaUsing first principle calculations we have explored the structural and electronic properties silicene(silicon analogue graphene) germanene (germanium graphene). The structuraloptimization reveals that buckled silicene are more stable than their planar counter-parts by about 0.1 0.35 eV respectively. In comparison to graphene (buckling parameter =0 A) germanium sheet is 0.737 A 0.537 but both...

10.1166/jctn.2014.3428 article EN Journal of Computational and Theoretical Nanoscience 2013-11-23

10.1166/jctn.2014.3429 article EN Journal of Computational and Theoretical Nanoscience 2013-11-23

This work presents a novel long-range acoustic wake-up receiver (WuRX) enhanced with an exponential horn, utilizing hybrid piezoelectric micromachined ultrasonic transducers (PMUTs) in pitch-catch configuration. The transmitter (TX) employs lead zirconate titanate (PZT) PMUT, while the (RX) uses 20% scandium-doped aluminum nitride (ScAlN) PMUT. Without horn attachment, system achieves peak-to-peak received voltage of more than 25 mV at 95 cm. An 30 mm mouth diameter, affixed to RX, offers...

10.1109/mems58180.2024.10439361 article EN 2024-01-21

10.1007/s12572-015-0149-7 article EN International Journal of Advances in Engineering Sciences and Applied Mathematics 2015-10-12

The paper presents modelling and finite element simulation of a surface acoustic wave (SAW) motor based on dual friction-drive (DFD). DFD SAW comprises flat cuboid slider tightly held between two identical piezoelectric stators typically made lithium niobate facing each other, stator having an interdigital transducer (IDT) fabricated its either side. A sinusoidal excitation applied to the pair IDTs one side generates Rayleigh SAWs which propagate surfaces interact with slider. With adequate...

10.1109/ultsym.2016.7728378 article EN 2017 IEEE International Ultrasonics Symposium (IUS) 2016-09-01

This work presents the in-house design, characterization, and development of an integrated PZT-based piezoelectric MEMS vibration sensor module its usage in surface roughness prediction fused silica substrate a CNC polishing machine. The differential electrical configuration device ensures enhanced acceleration sensitivity to out-of-plane motion, two orders larger than in-plane sensitivity. Thin-film Piezo on Silicon (TPoS) accelerometer with PZT layer was fabricated using photolithography,...

10.1109/jsen.2021.3103059 article EN IEEE Sensors Journal 2021-08-06

In this work, a piezoelectric MEMS based vibration sensor with unique gimbal shaped guard ring in differential electrical configuration has been designed for enhanced acceleration sensitivity out-of-plane direction and reduced in-plane crosstalk. The Thin-film Piezo on Silicon (TPoS) accelerometer was fabricated using GlobalMEMS Inc. PZT platform. This method makes use of the excellent property Lead Zirconate Titanate (PZT) thin-film along low crystal defect single silicon, thus ensuring...

10.1109/sensors47125.2020.9278649 article EN IEEE Sensors 2020-10-25

This research presents a novel method to differentiate the bonding quality of MEMS chip silicon substrate by using bulk acoustic wave (BAW) transducer arrays determine GHz ultrasonic transmission through interface. Prior bonding, one-port S-parameter measurements were conducted on array device at wafer level mean resonance frequency (1.487 GHz) and standard deviation (33.8 MHz). The was then bonded Au-AuSn temperature <300°C, confocal scanning microscopy (CSAM) used verify bond uniformity....

10.1109/eftf/ifcs57587.2023.10272103 article EN 2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS) 2023-05-15

In this work, we present a Silicon on Insulator (SOI) mechanically coupled MEMS device composed of three rotating ring resonators for enhancing its sensitivity. It shows the exploration Thermal Piezoresistive (TPR) transduction in mass sensing applications. Mass experiments are performed by dropping silver nano drops surface resonator. includes first-time investigation degree freedom (3-DOF) differential ring-shaped TPR (DR-TPR) coupled-resonator and involves selection best configuration...

10.1109/jmems.2022.3188267 article EN Journal of Microelectromechanical Systems 2022-07-13

This study presents finite element time‐domain simulation of a ‐YX LiTaO 3 Love wave (LW) delay line to explore coupled resonance phenomenon with ZnO nanorods designed on the top surface device. The effect variation in height propagation LW, mode‐transitions, area‐averaged stress, insertion loss, and mass sensitivity device is studied. Simulation results show that at critical nanorods, occurs causes sharp swing phase shift indicating transition from inertial elastic loading. Coupled...

10.1049/iet-smt.2018.5239 article EN IET Science Measurement & Technology 2019-08-03

This paper presents CMOS-MEMS fabrication process overview and the use of monolithic integrated devices in development frequency control sensing applications. Post-processing CMOS wafer can produce oxide-rich resonators that offer high Q low motional resistance. Frequency stability transduction efficiency be further improved by using a TiN-C based process. Both active passive temperature compensation techniques used to fabricate low-power ovenized oscillators generate highly stable output....

10.1109/mems46641.2020.9056139 article EN 2020-01-01

This paper reports on the latest advances and challenges of a 2D Fourier Transform Computational Accelerator using GHz Ultrasonics. Firstly, accelerator architecture is presented in four parts: (1) brief overview system principles ultrasonic waves; (2) CMOS circuit transmitter receiver IC; (3) MEMS transducer pixel design post-CMOS integration; (4) acoustic meta-lens design. The following section discusses sonic DAC front-end testing, CMOS-MEMS integration, fabrication flat meta-lens,...

10.1109/nano58406.2023.10231241 article EN 2023-07-02

In this paper, for the first time, phenomenon of mode localization has been investigated a 3-DOF thermal piezoresistive MEMS coupled-resonator attaining decent quality factor value 1,367 in ambient condition. The differential scheme enables effective feedthrough cancellation leading to enhanced signal noise ratio (SNR). proposed mechanically coupled ring-shaped resonator (DR-TPR) is made operate rotational minimize effect viscous damping caused by surrounding medium. utilization TPR...

10.1109/sensors47125.2020.9278648 article EN IEEE Sensors 2020-10-25

This work presents an in-house design, fabrication, and characterization of a resonant piezoelectric MEMS device using the Thin-film Piezoelectric-on-Silicon (TPoS) process AlN to realize Lorentz force-based magnetic sensor. The magnetometer is designed by employing flapping-mode rectangular resonator fixed at center two opposite edges. characterized Laser Doppler Vibrometer electrical measurements which show resonance frequency 356 kHz with <tex...

10.1109/transducers50396.2021.9495675 article EN 2021-06-20

This paper introduces an ultrasonic wave-based analog computing accelerator for 2D-FT computation. The investigation centers on two distinct pixel cell designs within the accelerator, highlighting potential of one design to address scalability and fabrication challenges. study compares segregated unified binary weighted BAW transducers as transmitter, along with a comparative assessment coupling between through modeling, simulation experimental analysis. result shows minimal difference in...

10.1109/ius51837.2023.10307887 article EN 2017 IEEE International Ultrasonics Symposium (IUS) 2023-09-03
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