A5036270761- Semiconductor materials and devices
- Graphene research and applications
- Carbon Nanotubes in Composites
- Semiconductor materials and interfaces
- Electronic Packaging and Soldering Technologies
- Electron and X-Ray Spectroscopy Techniques
- Advanced Electron Microscopy Techniques and Applications
- Chalcogenide Semiconductor Thin Films
- Intermetallics and Advanced Alloy Properties
- 3D IC and TSV technologies
- Advancements in Semiconductor Devices and Circuit Design
- Surface Treatment and Residual Stress
- Ion-surface interactions and analysis
- Quantum Dots Synthesis And Properties
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Phase-change materials and chalcogenides
- Astro and Planetary Science
- Magnetic Properties of Alloys
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Silicon and Solar Cell Technologies
- Metal and Thin Film Mechanics
University of South China
2025
Sungkyunkwan University
2015-2024
Materials Science & Engineering
2022
Tsinghua Sichuan Energy Internet Research Institute
2021
Tsinghua University
2021
Korea Institute of Geoscience and Mineral Resources
2021
Suwon Research Institute
2014-2020
Government of the Republic of Korea
2020
Soongsil University
2020
Hyundai Steel (South Korea)
2019
Graphite oxide (GO) samples were prepared by a simplified Brodie method. Hydroxyl, epoxide, carboxyl, and some alkyl functional groups are present in the GO, as identified solid-state 13C NMR, Fourier-transform infrared spectroscopy, X-ray photoemission spectroscopy. Starting with pyrolytic graphite (interlayer separation 3.36 A), average interlayer distance after 1 h of reaction, determined diffraction, increased to 5.62 A then further oxidation 7.37 24 h. smaller signal CPMAS NMR compared...
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wrinkle-free monolayer silicon wafer using hydrogen-terminated germanium buffer layer. anisotropic twofold symmetry (110) surface allowed unidirectional alignment multiple seeds, which were merged to with predefined orientation. Furthermore, weak interaction between...
Large-area, few-layer graphene is grown on a poly-nickel substrate using optimized CVD conditions. High temperature, short growth time, and an optimal gas mixing ratio (C2H2/H2 = 2/45) are found to be necessary synthesize highly crystalline grapheme, which may find applications in electronic devices. The wrinkles that observed under all conditions proposed formed by two processes.
Understanding the interplay between surface structure and passivation materials their effects associated with modification is of fundamental importance; however, it remains an unsolved problem in perovskite field. Here, we report a principle for efficient solar cells via facet-dependent phenomenon. The process selectively occurs on facets, which observed various post-treatment different functionality, atomic arrangements facets determine alignments layers. profound understanding leads to...
The doping/dedoping mechanism of carbon nanotubes (CNTs) with AuCl3 has been investigated regard to the roles cations and anions. Contrary general belief that CNTs are p-doped through reduction cationic Au3+ Au0, we observed chlorine anions play a more important role than Au in doping. To estimate effects Cl on CNTs, CNT film was dedoped as function annealing temperature (100−700 °C) under an Ar ambient confirmed by sheet resistance change presence G-band Raman spectra. X-ray photoelectron...
Quantum states of quasiparticles in solids are dictated by symmetry. Thus, a discovery unconventional symmetry can provide new opportunity to reach novel quantum state. Recently, Dirac and Weyl electrons have been observed crystals with discrete translational Here we experimentally demonstrate two-dimensional quasicrystal without A dodecagonal was realized epitaxial growth twisted bilayer graphene rotated exactly 30 degree. The grown up millimeter scale on SiC(0001) surface while maintaining...
An unconventional phase-change memory (PCM) made of In2 Se3 , which utilizes reversible phase changes between a low-resistance crystalline β and high-resistance γ is reported for the first time. Using PCM with layered film exfoliated from crystals on graphene bottom electrode, it shown that SET/RESET programmed states form via formation/annihilation periodic van der Waals' (vdW) gaps (i.e., virtual vacancy layers) in stack atomic layers concurrent reconfiguration In Se atoms across layers....
The metallic 1T phase of WS2 (1T-WS2 ), which boosts the charge transfer between electron source and active edge sites, can be used as an efficient electrocatalyst for hydrogen evolution reaction (HER). As semiconductor 2H (2H-WS2 ) is inherently stable, methods synthesizing 1T-WS2 are limited complicated. Herein, a uniform wafer-scale film prepared using plasma-enhanced chemical vapor deposition (PE-CVD) system. growth temperature maintained at 150 °C enabling direct synthesis films on both...
Silicon nanotubes (SiNTs) have been grown on a porous alumina surface, without the assistance of catalysts, by molecular beam epitaxy (MBE). The flow rate Si atoms and corrugated surface seem to play an important role in continuous growth tubular structures. Figure shows field‐emission scanning electron microscopy image SiNTs regular array hexagonal alumina.
We have investigated the change of atomic and electronic structures fluorinated single-walled carbon nanotubes (SWCNTs) using x-ray photoemission spectroscopy (XPS), electrical resistivity measurements, transmission electron microscopy (TEM). The fluorine content increases with increasing reaction temperature up to 300 °C. XPS indicated that SWCNT reveals an ionic-bonding character at low concentration covalent-bonding high concentration. temperatures, resulting from band gap enlargement It...
Rapid progress in two-dimensional (2D) crystalline materials has recently enabled a range of device possibilities. These possibilities may be further expanded through the development advanced 2D glass materials. Zachariasen carbon monolayer, novel amorphous allotrope, was successfully synthesized on germanium surface. The one-atom-thick continuous layer, which in-plane network fully sp2-hybridized, achieved at high temperatures (>900°C) and controlled growth rate. We verified that charge...
In this study, we developed a roll-to-roll Ag electroplating process for metallic nanowire electrodes using galvanostatic mode. Electroplating is low-cost and facile method deposition of metal onto target surface with precise control both the composition thickness. Metallic networks [silver nanowires (AgNWs) copper (CuNWs)] coated polyethylene terephthalate (PET) film were immersed directly in an bath containing AgNO3. Solvated silver ions (Ag+ ions) deposited through application constant...
Abstract Herein, a high‐quality gate stack (native HfO 2 formed on 2D HfSe ) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with suppressed trap density ( D it ≈ 5 × 10 cm −2 eV −1 ). The chemically converted exhibits dielectric constant, κ 23, resulting in low leakage current (≈10 −3 A at equivalent oxide thickness ≈0.5 nm. Density functional calculations indicate that the atomistic mechanism for achieving possibility of O atoms replacing Se interfacial...
Carbon nanotubes-supported Pt nanoparticles were loaded using a microwave oven on the defective carbon nanotubes generated by an additional oxidant during acid treatment. The authors’ Raman spectra and x-ray diffraction analysis demonstrated that defects created oxidation treatment acted as nucleation seeds for adsorption. had size distributions of 2–3nm uniformly distributed nanotubes. density functional calculations showed adsorption atom vacancy nanotube was significantly stronger s-p...
Abstract The effect of dispersant structures for dispersing single‐walled carbon nanotubes (SWCNTs) is investigated. monomer 3‐hexylthiophene used as the starting material development a series oligomers that are to disperse SWCNTs in an organic solvent. obtained by varying number head groups, regioregularity and head‐to‐tail ratios hexyl group oligomers. SWCNT solutions characterized with UV‐vis–near‐IR spectroscopy transmission electron microscopy. An increase groups improves dispersity...
2–3 nm sized Pt3Co nanoparticles (NPs) with Pt-enriched shells on a carbon support were prepared by one-step ultrasound polyol process Pt(acac)2 (acac = acetylacetonate) and Co(acac)2. The facilitates the conversion of Co(acac)2 retards into NPs, which can be explained different vapour pressures metal precursors. shell structure NPs this method, as opposed to alloy-like elemental distribution synthesized in similar conditions but without ultrasound, was evidenced transmission electron...