A5088643953- Advanced Memory and Neural Computing
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Advanced Sensor and Energy Harvesting Materials
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- ZnO doping and properties
- Perovskite Materials and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Gas Sensing Nanomaterials and Sensors
- Physical Unclonable Functions (PUFs) and Hardware Security
- Neuroscience and Neural Engineering
- Molecular Junctions and Nanostructures
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Transition Metal Oxide Nanomaterials
- Ga2O3 and related materials
- Graphene research and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Neural Networks and Reservoir Computing
- Silicon Nanostructures and Photoluminescence
- Photoreceptor and optogenetics research
- Electronic and Structural Properties of Oxides
Gachon University
2020-2025
Anyang University
2025
Hanyang University
2025
Kobe University
2022
Government of the Republic of Korea
2020-2021
Seonam University
2021
Pohang University of Science and Technology
2015-2020
Northwestern University
2020
Korea Post
2020
University of Geneva
2019
Abstract Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area mechanically flexible substrates. transistors are ideal candidates the development since they can operate as n-type p-type transistors. Nevertheless, experimental demonstration ambipolar is limited to inverters. The control transistor polarity crucial proper circuit operation. Novel gating techniques enable but result in dramatically reduced...
Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently future electronic and photonic applications. However, they not yet employed synthesizing active pixel image sensors. Here, we report on an sensor array with a bilayer MoS2 film prepared via two-step method. The of is composed 2D switching transistors phototransistors. maximum photoresponsivity (Rph) the phototransistors in 8 × statistically measured as high 119.16 A W-1. With...
Sensory adaptation is an essential part of biological neural systems for sustaining human life. Using the light-induced halide phase segregation CsPb(Br1-xIx)3 perovskite, we introduce neuromorphic phototransistors that emulate sensory adaptation. The phototransistor based on a hybrid structure perovskite and transition-metal dichalcogenide (TMD) emulates in response to continuous light stimulus, similar system. underlying mechanism mixed perovskites. separation under visible-light...
Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics H-TRs, ternary inverters have recently been demonstrated. However, they shown incomplete inverter characteristics; output voltage (VOUT ) does not fully swing from VDD to GND . A new H-TR device structure consists a...
Abstract Spiking neural networks exploit spatiotemporal processing, spiking sparsity, and high interneuron bandwidth to maximize the energy efficiency of neuromorphic computing. While conventional silicon-based technology can be used in this context, resulting neuron-synapse circuits require multiple transistors complicated layouts that limit integration density. Here, we demonstrate unprecedented electrostatic control dual-gated Gaussian heterojunction for simplified neuron implementation....
The metallic 1T phase of WS2 (1T-WS2 ), which boosts the charge transfer between electron source and active edge sites, can be used as an efficient electrocatalyst for hydrogen evolution reaction (HER). As semiconductor 2H (2H-WS2 ) is inherently stable, methods synthesizing 1T-WS2 are limited complicated. Herein, a uniform wafer-scale film prepared using plasma-enhanced chemical vapor deposition (PE-CVD) system. growth temperature maintained at 150 °C enabling direct synthesis films on both...
Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, organic ternary inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory employed to control channel conductance systematically, thus realizing stabilized T-inverter operation. The 3-dimensional (3D) fabricated in vertically stacked form all-dry processes, which...
Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography the offers possibility to develop integrated circuits on a larger scale. In addition, combinations other materials enabled development sensor applications or neuromorphic devices in recent years. Here, this paper provides timely overview...
Abstract A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In H-MTR, reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing without apparent accomplished through programming operation. Based on binary/ternary reconfigurable logic inverter (R-inverter) successfully...
Transition metal dichalcogenides (TMDs) have gained significant attention as next-generation semiconductor materials that could potentially overcome the integration limits of silicon-based electronic devices. However, a challenge in utilizing TMDs semiconductors is lack an established PN doping method to effectively control their electrical properties, unlike those semiconductors. Conventional methods, such ion implantation, can induce lattice damage TMDs. Thus, chemical methods Schottky...
Abstract To achieve the high energy densities demanded by emerging technologies, lithium battery electrodes need to approach volumetric and specific capacity limits of their electrochemically active constituents, which requires minimization inactive components electrode. However, a reduction in percentage conductive additives charge transport within electrode, results compromised electrochemical performance. Here, an electrode design that achieves efficient electron lithium‐ion kinetics at...
New materials and device approaches to multi-valued logic systems are introduced.
Abstract For enhanced security in hardware‐based devices, it is essential to extract various independent characteristics from a single device generate multiple keys based on specific values. Additionally, the secure destruction of authentication information crucial for integrity data. Doped amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistors (TFTs) using poly(vinylidene fluoride‐co‐hexafluoropropylene) (PVDF‐HFP) induce dipole doping effect through phase‐transition process,...
Abstract Probabilistic inference in data-driven models is promising for predicting outputs and associated confidence levels, alleviating risks arising from overconfidence. However, implementing complex computations with minimal devices still remains challenging. Here, utilizing a heterojunction of p- n-type semiconductors coupled separate floating-gate configuration, Gaussian-like memory transistor proposed, where programmable current-voltage response achieved within single device. A...
Abstract In this era of demanding invulnerable security systems against the threat hacking, physically unclonable functions (PUFs), especially in which can spawn multiple keys within a single device, has gained attention. This investigation explores multi‐key generable PUF devices employing organic small molecules, specifically C8‐BTBT and PTCDI‐C13. The variation stems from formation irregular PN junctions, haphazardly configured grain boundaries C8‐BTBT. A comprehensive analysis including...
Abstract Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional circuits require a large number vertical between layers. Here, we present novel multilevel interconnect scheme that involves solvent-free patterning insulator layers to form an interconnecting area ensures reliable electrical connection two metals in different Using highly method, highest stacked transistors date, consisting 5 and 20 layers, is...
Flexibile biosensors have a lot of applications in measuring the concentration target bioanalytes. In combination with its flexibility, electrochemical sensors containing 2D materials particular advantages such as enlarged area compatibility, transparency, and high scalability. A flexible biosensor was fabricated by direct synthesis molybdenum disulfide (MoS2) on polyimide (PI) substrate, which can be used working electrode electrochemistry platforms. The formation 2D-MoS2 PI achieved using...