A5080007657- Heusler alloys: electronic and magnetic properties
- Magnetic properties of thin films
- ZnO doping and properties
- Magnetic and transport properties of perovskites and related materials
- Shape Memory Alloy Transformations
- Multiferroics and related materials
- Advanced Condensed Matter Physics
- Semiconductor materials and interfaces
- Magnetic Properties of Alloys
- MXene and MAX Phase Materials
- Topological Materials and Phenomena
Sogang University
2015-2021
We report the structural, magnetic, and electrical properties of antiferromagnetic cubic Mn3Ga thin films, in comparison with ferrimagnetic tetragonal Mn3Ga. The structural analyses reveal that is heteroepitaxially grown on a MgO substrate disordered Cu3Au-type structure, which transforms to as RF sputtering power increases. In Mn3Ga, Mn moments aligned ferromagnetically layers are stacked antiferromagnetically between layers, compared theoretical prediction. magnetic magnetotransport data...
Topologically protected chiral skyrmion is an intriguing spin texture, which has attracted much attention because of fundamental research and future spintronic applications. MnSi with the non-centrosymmetric structure well-known material hosting phase. To date, preparation crystals been investigated by using special instruments ultrahigh vacuum chamber. Here, we introduce a facile way to grow films on sapphire, in relatively low environment conventional magnetron sputtering. Magnetotransport...
The key of spintronic devices using the spin-transfer torque phenomenon is effective reduction switching current density by lowering damping constant and saturation magnetization while retaining strong perpendicular magnetic anisotropy. To reduce magnetization, particular conditions such as specific substitutions or buffer layers are required. Herein, we demonstrate highly reduced in tetragonal D022 Mn3–xGa thin films prepared rf magnetron sputtering, where epitaxial growth examined on...
Abstract A proximity effect between magnetic materials and topological surface states can generate modulate the localized spins without complicated material structures, but its origin is not clearly verified. MnSi single layer MnSi/Bi 2 Se 3 bilayer on Al O (001) substrates are fabricated by magnetron co‐sputtering molecular beam epitaxy systems, in which a large chiral structure manifested. The electronic properties of both samples meticulously compared proximity‐induced magnetism...
Abstract Topologically protected chiral skyrmion is an intriguing spin texture, which has attracted much attention because of fundamental research and future spintronic applications. MnSi with the non-centrosymmetric structure well-known material hosting phase. To date, preparation crystals been investigated by using special instruments ultrahigh vacuum chamber. Here, we introduce a facile way to grow films on sapphire substrate relatively low environment conventional magnetron sputtering....