Ximing Rong

ORCID: 0000-0003-0558-0780
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About
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Research Areas
  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • ZnO doping and properties
  • MXene and MAX Phase Materials
  • Ga2O3 and related materials
  • Luminescence Properties of Advanced Materials
  • Solid-state spectroscopy and crystallography
  • Graphene research and applications
  • GaN-based semiconductor devices and materials
  • Aluminum Alloys Composites Properties
  • Gas Sensing Nanomaterials and Sensors
  • Quantum and electron transport phenomena
  • Electrochemical sensors and biosensors
  • Advanced Photocatalysis Techniques
  • Advanced biosensing and bioanalysis techniques
  • Advanced Nanomaterials in Catalysis
  • Copper-based nanomaterials and applications
  • Laser Material Processing Techniques
  • nanoparticles nucleation surface interactions
  • Microstructure and mechanical properties
  • Cellular and Composite Structures
  • Silicon Nanostructures and Photoluminescence
  • Electrocatalysts for Energy Conversion
  • Molecular Junctions and Nanostructures
  • Optical properties and cooling technologies in crystalline materials

Southern University of Science and Technology
2024

Shenzhen University
2017-2023

Materials Science & Engineering
2020-2021

Advanced Ceramics Manufacturing (United States)
2020-2021

Shanghai University
2019

University of Hong Kong
2017

Fudan University
2013-2015

National Institute of Metrology
2014

Tianjin University
2013

Northeast Normal University
2008

Abstract The incorporation of impurity ions or doping is a promising method for controlling the electronic and optical properties structural stability halide perovskite nanocrystals (NCs). Herein, we establish relationships between rare‐earth intrinsic emission lead‐free double Cs 2 AgInCl 6 NCs to impart tune performances in visible light region. Tb 3+ were incorporated into occupied In sites as verified by both crystallographic analyses first‐principles calculations. Trace amounts Bi...

10.1002/anie.202004562 article EN Angewandte Chemie International Edition 2020-04-24

Abstract The halide double perovskite family represented by A 2 (B + ,B 3+ )X 6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill emerging applications in optoelectronic fields. Herein, design experimental synthesis of a new Mn 2+ ‐doped Cs NaBi 1‐ x In Cl crystals with an intense orange‐yellow emission are reported, phase formation stability is discussed combined experimental–theoretical approach....

10.1002/adom.201801435 article EN Advanced Optical Materials 2019-02-10

Abstract Lead‐free and stable Sn halide perovskites demonstrate tremendous potential in the field of optoelectronic devices. Here, structure optical properties “defect” Cs 2 SnCl 6− x Br are reported, as well their use photodetector materials. Millimeter‐sized single crystals grown by hydrothermal method, with body color continuously changing from transparent to yellow finally dark red. Narrowband single‐crystal photodetectors using presented, which show a high detectivity ≈2.71 × 10 Jones,...

10.1002/adom.201900139 article EN Advanced Optical Materials 2019-03-06

Herein, we prepare a consisting of the framework Cu-MOF anchored on graphitic carbon nitride (Cu-MOF/C3N5) nanomaterial for antioxidants sensing. The photocatalytic efficiency was statistically increased by doping...

10.1039/d4tc05236f article EN Journal of Materials Chemistry C 2025-01-01

The anti-site defect model was established to investigate transposition influence on the optical and electronic properties of double-perovskite Cs<sub>2</sub>AgSbCl<sub>6</sub>.

10.1039/c7ta10062k article EN cc-by Journal of Materials Chemistry A 2017-12-28

Abstract New 2D materials with low‐symmetry structures aroused great interest in developing monolithic polarization‐sensitive photodetectors small volumes, which can provide a new degree of freedom for more information night, fog, and smoke environments. However, at least half them presented anisotropy an anisotropic factor (≈2) photocurrent up to now. Herein, after systematic investigation the optical anisotropies GeSe nanosheets, novel self‐driven imaging photodetector excellent...

10.1002/adfm.202409331 article EN Advanced Functional Materials 2024-07-03

A supersaturation of nitrogen atoms is found in the surface layer microstructured silicon after femtosecond (fs) laser irradiation NF3. The average concentration uppermost 50 nm about 0.5 ± 0.2 at. %, several orders magnitude higher than solid solubility silicon. nitrogen-hyperdoped shows high crystallinity doped layer, which due to repairing effect on defects lattices. Nitrogen and vacancies can be combined into thermal stable complexes fs irradiation, makes exhibit good stability optical...

10.1063/1.4868017 article EN Applied Physics Letters 2014-03-03

Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of is key point achieve MoTe2-based complementary optoelectronic devices. Herein, we demonstrate the dynamic effective control few-layer MoTe2, through in situ...

10.1021/acsnano.9b04416 article EN ACS Nano 2019-07-22

Doping or alloying in perovskites and perovskite variants provides a promising way for modulating the electronic photoluminescence properties structural stability.

10.1039/d1qm00302j article EN Materials Chemistry Frontiers 2021-01-01

Conventional doping schemes of silicon (Si) microelectronics are incompatible with atomically thick two-dimensional (2D) transition metal dichalcogenides (TMDCs), which makes it challenging to construct high-quality 2D homogeneous p-n junctions. Herein, we adopt a simple yet effective plasma-treated method seamlessly lateral WSe2 homojunction. ambipolar transport properties was exposed O2 plasma form WOx on the surface in self-limiting process that induces hole underlying WSe2via electron...

10.1039/d2nr06263a article EN cc-by-nc Nanoscale 2023-01-01

Arrays of high-quality crystalline conical spikes were formed on silicon surface in the presence NF3 with femtosecond laser irradiation. The structures is smooth, and Raman scattering spectroscopy shows that few polymorphs such as a-Si, Si-XII, Si-III observed structures. In mid-infrared wavelength range 3–16 µm, structured exhibits a high absorptance up to 0.8. Additionally, sample remains almost unchanged after annealing process. These properties will make it promising material for...

10.7567/apex.6.081301 article EN Applied Physics Express 2013-07-19

We study the optimal investment strategies of DC pension, with stochastic interest rate (including CIR model and Vasicek model) salary. In our model, plan member is allowed to invest in a risk-free asset, zero-coupon bond, single risky asset. By applying Hamilton-Jacobi-Bellman equation, Legendre transform, dual theory, we find explicit solutions for CRRA CARA utility functions, respectively.

10.1155/2013/297875 article EN cc-by Discrete Dynamics in Nature and Society 2013-01-01

Abstract The incorporation of impurity ions or doping is a promising method for controlling the electronic and optical properties structural stability halide perovskite nanocrystals (NCs). Herein, we establish relationships between rare‐earth intrinsic emission lead‐free double Cs 2 AgInCl 6 NCs to impart tune performances in visible light region. Tb 3+ were incorporated into occupied In sites as verified by both crystallographic analyses first‐principles calculations. Trace amounts Bi...

10.1002/ange.202004562 article EN Angewandte Chemie 2020-04-24

Black phosphorus (BP) has a pressure-dependent bandgap width and shows the potential for applications as low-dimensional pressure sensor. We built two kinds of pure BP devices with zigzag or armchair conformation, explored their conductance in detail by using first principles calculations. The exhibit different conductance-pressure relationships. For is robust against stress when out-of-plane ratio less than 15%, then increases rapidly until conductive channels are fully opened. decreases at...

10.3762/bjnano.10.190 article EN cc-by Beilstein Journal of Nanotechnology 2019-09-24

In this paper, we have introduced the auxetic effect in black phosphorus (BP) analog Sb and achieved modulations monolayer As via first-principles calculations. Compared with As, is phonon unstable. By applying uniaxial strain along each direction, discovered zigzag-vertical reversibility on out-of-plane auxeticity, negative Poisson's ratios for were simulated to be -0.125/-0.172 -0.036/-0.063, respectively, by zigzag/vertical directions. The ratio could significantly manipulated a vertical...

10.1039/c9cp06933j article EN Physical Chemistry Chemical Physics 2020-01-01

Black phosphorus (BP), a single elemental two-dimensional (2D) material with sizable band gap, meets several critical requirements in the development of future nanoelectronic applications. This work reports ambipolar characteristics few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The h-BN capping have advantages over conventional Al2O3 flexible and device technique was used to achieve an electron mobility BP devices 73 cm2V-1s-1, thereby demonstrating...

10.3390/membranes11120952 article EN cc-by Membranes 2021-12-01

A first-principles calculation of the structural stability and mechanical property Ni(111)–graphene–Ni(111) layered composite was presented. Three different models were considered, most stable interfacial structure had been determined with top–fcc in both sides graphene. Stretching calculations demonstrate that tensile stress can reach twice pure Ni ranges 0–0.2 strain. The Young's modulus triaxial directions are 384 (x), 362 (y), 303 (z) GPa for structure, 212 251 273 single-crystal Ni(111).

10.7567/jjap.54.125503 article EN Japanese Journal of Applied Physics 2015-11-18
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