A5043675241- 2D Materials and Applications
- Perovskite Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Plasmonic and Surface Plasmon Research
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- Gold and Silver Nanoparticles Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- Advanced biosensing and bioanalysis techniques
- Biosensors and Analytical Detection
- Advanced Memory and Neural Computing
- Advanced Thermoelectric Materials and Devices
- Advanced Algorithms and Applications
- ECG Monitoring and Analysis
- ZnO doping and properties
- Advanced Sensor and Energy Harvesting Materials
- Thin-Film Transistor Technologies
- Advanced Photocatalysis Techniques
Zhejiang University
2024-2025
State Key Laboratory of Silicon Materials
2024
Zhejiang University of Technology
2024
Shenzhen University
2017-2023
National University of Singapore
2017-2019
East China University of Science and Technology
2014
Highly sensitive surface-enhanced Raman scattering (SERS) detection was achieved on plasmon-free TiO2 photonic artificial microarray, which can be quickly recovered under simulated solar light irradiation and repeatedly used. The performance is attributed to the enhanced matter-light interaction through repeated multiple in microarray. Moreover, SERS sensitivity unprecedentedly found dependent different light-coupling of microarray with various band gaps, where gap center near laser...
Abstract Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree freedom to combine extend the features materials, opening up new functionalities photonic optoelectronic devices. Herein, type‐II InSe/PdSe 2 vdWs with strong interlayer transition NIR photodetection is demonstrated. Strong...
Two-dimensional black phosphorus configured field-effect transistor devices generally show a hole-dominated ambipolar transport characteristic, thereby limiting its applications in complementary electronics. Herein, we demonstrate an effective surface functionalization scheme on few-layer phosphorus, through situ modification with potassium, view toward high performance device applications. Potassium induces giant electron doping effect along clear bandgap reduction, which is further...
Abstract Photodetectors based on two‐dimensional (2D) van der Waals heterostructures (vdWHs) have demonstrated great potential in modern nanotechnologies across a wide range of applications. However, due to the severe interface recombination photogenerated electron–hole pairs and various absorption edges constituent layers, they would suffer from low carrier collection efficiency, spectral response each layer is indistinguishable. Herein, tellurium (Te) nanoflakes with broadband...
Abstract 2D semiconductors have shown great potentials for ultra‐short channel field‐effect transistors (FETs) in next‐generation electronics. However, because of intractable surface states and interface barriers, it is challenging to realize high‐quality contacts with low contact resistances both p‐ n‐ FETs. Here, a graphene‐enhanced van der Waals (vdWs) integration approach demonstrated, which multi‐scale (nanometer centimeter scale) reliable (≈100% yield) metal transfer strategy...
Recent findings about ultrahigh thermoelectric performances in SnSe single crystals have stimulated research on this binary semiconductor material. Furthermore, single-layer is an interesting analogue of phosphorene, with potential applications two-dimensional (2D) nanoelectronics. Although significant advances the synthesis nanocrystals been made, fabrication well-defined large-sized flakes a facile way still remains challenge. The growth rectangular thickness ~6.8 Å and lateral dimensions...
Monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) show interesting optical and electrical properties because of their direct bandgap. However, the low absorption atomically thin TMDs limits applications. Here, we report enhanced optoelectronic monolayer molybdenum disulfide (MoS2) by using an asymmetric Fabry–Perot cavity. The cavity is based on a hybrid structure MoS2/ hexagonal boron nitride (BN)/Au/SiO2 realized through layer-by-layer vertical stacking....
Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of is key point achieve MoTe2-based complementary optoelectronic devices. Herein, we demonstrate the dynamic effective control few-layer MoTe2, through in situ...
Abstract For next‐generation Internet‐of‐Everything applications, for example, artificial‐neural‐network image sensors, artificial retina, visible light communication, on‐chip interconnection, and flexible devices, etc., high‐performance microscale photodetectors are in urgent demands. 2D material (2DM) have been researched demonstrated impressive performances. However, they not met the demands filterless narrowband photoresponse, wide linear dynamic range (LDR), ultralow dark current, large...
Abstract Flexible electronics attract extensive interest in academic research and commercial markets. Fabrication of on flexible substrates remains a great challenge though. Mostly, components including metal electrodes functional materials are created via physical vapor deposition (PVD) conjunction with photolithography. Nevertheless, ultrathin polymeric susceptible to environmental shocks during PVD. In this paper, full‐solution process for fabricating copper (Cu) micrometer (µm) scale is...
Schottky barriers greatly influence the performance of optoelectronic devices. can be reduced by harnessing polymorphism 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, temperature or chemicals are normally required for phase transformation, processes complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes gold electrodes achieved a simple thermal annealing treatment at low (200–400 °C). The...
Abstract 2D transition metal dichalcogenides (2D‐TMDs) and their unique polymorphic features such as the semiconducting 1H quasi‐metallic 1T′ phases exhibit intriguing optical electronic properties, which can be used in novel photonic device applications. With favorable nature of 1T′‐phase 2D‐TMDs, 1H‐to‐1T′ phase engineering processes are an immensely vital discipline exploited for Here, a high‐yield monolayer‐MoS 2 on Cu monolayer‐WSe Au via annealing‐based process is reported. A...
Abstract The demand for high‐performance X‐ray detectors leads to material innovation efficient photoelectric conversion and carrier transfer. However, current are often susceptible chemical irradiation instability, complex fabrication processes, hazardous components, difficult compatibility. Here, we investigate a two‐dimensional (2D) with relatively low atomic number, Ti 3 C 2 T x MXenes, single crystal silicon detection single‐pixel imaging (SPI). We fabricate MXene/Si detector...
van der Waals heterostructures of two-dimensional (2D) materials have attracted considerable attention due to their flexibility in the design new functional devices. Despite numerous studies on graphene/2D semiconductor heterostructures, optoelectronic applications are significantly hindered because several disadvantages, such as large band gaps and chemical instability. In this work, we demonstrate fabrication graphene/S-doped InSe heterostructure photodetectors with excellent photoresponse...
Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects interface disorders the environment, which cause carrier mobility density fluctuations hinder their practical application. In this work, we employ non-destructive method van der Waals (vdW) integration to improve electron back-gated InSe FETs....
Effective control of electric field intensity/distribution in field-effect transistors restrains channel self-heating and drives reliable operation over the entire lifetime. However, two-dimensional material (2DM)-based transistors, it is a great challenge to manipulate lateral via dedicated drain/source structure design due lack CMOS-compatible doping strategy. Here, we developed widely tunable high-spatial-resolution technology for 2DMs, contributing effective modulation 2DM-based...
High-performance field-effect transistors based on two-dimensional (2D) semiconductors have been realized, but they often exhibit inherent transport property. Local p- and n-doping same the semiconductor is essential for realizing basic components of integrated circuits, such as diodes logic inverters. However, existing doping technologies 2D are complex or expensive. Here, a simple low-cost method p-doping few-layer MoTe2 transistor demonstrated. Air heating at low temperature 100 °C...
The molecular orientation of organic semiconductors on a solid surface could be an indispensable factor to determine the electrical performance organic-based devices. Despite its fundamental prominence, clear description emergent two-dimensional layered material-organic interface is not fully understood yet. In this study, we reveal alignment and electronic structure thermally deposited N,N'-dibutyl-3,4,9,10-perylene-dicarboximide (PTCDI-C4) molecules natural molybdenum disulfide (MoS2)...
Molybdenum oxides have attracted much interest due to their unique electronic properties. Here, we report a convenient and efficient method synthesize centimeter-scale single crystal of MoO3 ribbons through an atmospheric pressure physical vapor deposition approach. Optical microscopy, atomic force high-resolution transmission electron microscopy (HRTEM), selected area diffraction, x-ray diffraction measurements reveal that the grow along MoO3⟨100⟩ direction top surface is MoO3(010) plane....
Parallel aligned Ag nanowires in SBA-15 present high SERS sensitivity due to improved plasmonic coupling effect. The further utilization of reversible conversion reaction between and AgCl makes this substrate easily renewable.
Abstract It has been found that substitutional atoms, surface modification, electrostatic gating, and contact electrode engineering can induce doping effects in 2D materials. However, the level, area, position, pattern shape are not well controlled; thus, it is hard to generate high‐performance, multifunctional devices logic circuits with these approaches. Here, a damage‐free, highly controllable, local multilayer molybdenum ditelluride (MoTe 2 ) flakes be realized controllable laser beam...
Abstract 2D semiconductors are promising for future photodetectors because of their dangling‐bond‐free surface, atomic thickness, tunable bandgap, high mobility, and flexible nature. However, the low light absorption is one main limits practical applications materials. Lots efforts have been taken to optimize absorption, example, constructing heterojunctions exploring more photo‐sensitive Here, epitaxial growth layered copper–indium–selenide (CIS) nanoflakes realized by chemical vapor...