A5042761297- Graphene research and applications
- 2D Materials and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Photonic and Optical Devices
- MXene and MAX Phase Materials
- Neuroscience and Neural Engineering
- Quantum Dots Synthesis And Properties
- Phase-change materials and chalcogenides
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
- Silicon Carbide Semiconductor Technologies
- Carbon Nanotubes in Composites
- CCD and CMOS Imaging Sensors
- Ga2O3 and related materials
- Photoreceptor and optogenetics research
- Gas Sensing Nanomaterials and Sensors
- Plasmonic and Surface Plasmon Research
- Advancements in Battery Materials
- Microwave Engineering and Waveguides
- Bone Tissue Engineering Materials
- Silicon Nanostructures and Photoluminescence
Zhejiang University
2015-2025
Zhejiang University of Science and Technology
2022-2025
Harbin University of Science and Technology
2013-2025
Taiyuan University of Technology
2018-2025
First Affiliated Hospital of Zhengzhou University
2025
Mianyang Central Hospital
2024
University of Electronic Science and Technology of China
1990-2024
Yantai University
2024
Wuhan University
2018-2024
Shandong University
2024
While the selection of new "backbone" device structure in era post-planar CMOS is open to a few candidates, FinFET and its variants show great potential scalability manufacturability for nanoscale CMOS. In this paper we report design, fabrication, performance, integration issues double-gate FinFETs with physical gate length being aggressively shrunk down 10 nm fin width 12 nm. These MOSFETs are believed be smallest transistors ever fabricated. Excellent short-channel performance observed...
It is well established that defects strongly influence properties in two-dimensional materials. For graphene, atomic activate the Raman-active centrosymmetric A1g ring-breathing mode known as D-peak. The relative intensity of this D-peak compared to G-band peak most widely accepted measure quality graphene films. However, no such metric exists for monolayer semiconducting transition metal dichalcogenides WS2 or MoS2. Here we intentionally create atomic-scale hexagonal lattice pristine and...
We demonstrate extraordinary photoconductive behavior in two-dimensional (2D) crystalline indium selenide (In2Se3) nanosheets. Photocurrent measurements reveal that semiconducting In2Se3 nanosheets have an extremely high response to visible light, exhibiting a photoresponsivity of 3.95 × 10(2) A·W(-1) at 300 nm with external quantum efficiency greater than 1.63 10(5) % 5 V bias. The key figures-of-merit exceed graphene and other 2D material-based photodetectors reported date. In addition,...
After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery graphene, field 2D electronics has reached stage with booming and device architectures. However, efficient integration functional layers three-dimensional (3D) systems remains significant challenge, limiting performance circuit design. In this review, we investigate experimental efforts in interfacing 3D analyze properties heterojunctions formed between them. The contact resistivity metal...
Abstract We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique absorption property of graphene leads to long carrier life time hot electrons that can contribute photocurrent potential carrier-multiplication. Our proposed structure boosts internal quantum efficiency over 100%, approaching upper-limit silicon-based In near-ultraviolet...
We demonstrate Schottky-barrier solar cells employing a stack of layer-structured semiconductor molybdenum disulfide (MoS2) nanomembranes, synthesized by the chemical-vapor-deposition method, as critical photoactive layer. An MoS2 nanomembrane forms with metal contact layer-transfer process onto an indium tin oxide (ITO) coated glass substrate. Two vibrational modes in E12g (in-plane) and A1g (perpendicular-to-plane), were verified Raman spectroscopy. With simple stacked structure...
Polar skyrmions are topologically nontrivial polarization textures that demonstrate exotic physical phenomena and novel memory applications. Thus far, these have primarily been reported in oxide-ferroelectric-based epitaxial heterostructures because their stabilization requires an elastic energy penalty from the strains. Here, without epitaxial-strain engineering, we discover polar skyrmion bubbles stand-alone van der Waals ferroelectric CuInP2S6 crystal through combination of piezoelectric...
Gate dielectric leakage current becomes a serious concern as sub-20 /spl Aring/ gate oxide prevails in advanced CMOS processes. Oxide this thin can conduct significant by various direct-tunneling mechanisms and degrade circuit performance. While the of MOS capacitors has been much studied, little reported on compact MOSFET modeling with leakage. In work, an analytical intrinsic model for physical source/drain partition is developed. This implemented BSIM4.
Two-dimensional graphene-like silicon carbide (2d-SiC) has emerged as an intriguing new class of layered nanostructure. Using density functional theory, key electronic and optical properties 2d-SiC nanosheets, in particular, mono- bilayer 2d-SiC, are investigated. The these nanosheets found to be highly dependent on their physical thickness geometric configuration. Multilayer exhibits indirect bandgap. We find that monolayer the other hand, a direct bandgap (∼2.5 eV) can tuned through...
Demonstration of hybrid bulk heterojunction (BHJ) solar photovoltaic cell employing molybdenum disulfide (MoS2)/titanium dioxide (TiO2) nanocomposite (∼15 μm thick) and poly 3-hexylthiophene (P3HT) active layers is presented in this letter. The dominant Raman peak at 146 cm−1 confirmed TiO2, while two other peaks observed 383 407 asserted MoS2 the film. demonstrated BHJ cell, having a stacked structure indium tin oxide/TiO2/MoS2/P3HT/gold, exhibits short circuit current density 4.7 mA/cm2,...
Abstract Graphene (Gr) nanosheets with multilayer structures were dispersed in a nickel (Ni) plating solution by using surfactant magnetic stirring method. Gr incorporated into Ni matrix through process to form Ni-Gr composites on target substrate. uniformly the matrix, and oxygen radicals present reduced during electro-deposition process. The incorporation of increases both inter-planar spacing degree preferred orientation crystalline Ni. With addition content as low 0.05 g L −1 , elastic...
High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for wide applications. Here, photodetector based on van der Waals heterostructures graphene its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse the ultraviolet (255 nm) mid-infrared (4.3 µm) wavelengths, with three orders magnitude enhanced responsivity compared pristine photodetectors. The...
Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS<sub>2</sub>) nanosheets are explored for solar energy harvesting.
Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their mechanisms are phenomenally postulated the modulation carrier transport by polarization control over Schottky barriers. However, for decade, obtaining direct, comprehensive experimental evidence has remained scarce. Here, we report an approach to experimentally demonstrate origin ferroelectric using...
Two-dimensional (2D) materials have become potential resistive switching (RS) layers to prepare emerging non-volatile memristors. The atomically thin thickness and the highly controllable defect density contribute construction of ultimately scaled memory cells with stable behaviors. Although conductive bridge random-access based on 2D hexagonal boron nitride has been widely studied, realization RS completely relying vacancies in performance superiority. Here, we synthesize carbon-doped h-BN...
Highlights Below are the highlights of this review: This paper explores embedded RRAM development, parameters, and integration tech compatible with CMOS, highlighting advantages in systems its potential impact on chip process nodes. introduces recent industry developments RRAM, featuring research from companies like Intel TSMC, showcasing significant commercial application potential. discusses RRAM’s progress beyond storage, exploring applications FPGA, MCU, CIM, Neuromorphic Computing,...
Abstract The integration of solar interfacial evaporation and power generation offers a sustainable solution to address water electricity scarcity. Although water‐power cogeneration schemes are proposed, the existing lack scalability, flexibility, convenience, stability. These limitations severely limit their future industrial applications. In this study, we prepared hybrid fabric composed basalt fibers cotton yarns with asymmetric structure using textile weaving technology. yarn in lower...
Abstract The visual system is crucial for human perception and learning, the retina responsible pre‐processing information. Mimicking neurobiological functions of provides basis neuromorphic vision hardware. Here, an optogenetics‐inspired prototype capable modifying neuron‐spiking behavior in a retina‐like manner demonstrated. In addition to basic information processing, neuronal signal transmission bio‐faithfully emulated using optical modulation, that is, firing inhibited dark activated...
Abstract Implementing memristors for neuromorphic computing demands ultralow power, suppressed variations, and compact structure. Previously reported artificial neurons are mostly demonstrated with micrometer size in which the stochastic formation/rupture of conductive filaments leads to significant temporal spatial variations. Additionally, external current compliance is commonly applied ensure volatile switching behavior, inevitably increasing design complexity power consumption due...