Srikrishna Chanakya Bodepudi

ORCID: 0000-0003-4519-581X
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About
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Research Areas
  • Graphene research and applications
  • Nanowire Synthesis and Applications
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • CCD and CMOS Imaging Sensors
  • Photonic and Optical Devices
  • Ga2O3 and related materials
  • Quantum and electron transport phenomena
  • Silicon Nanostructures and Photoluminescence
  • Thermal Radiation and Cooling Technologies
  • Anodic Oxide Films and Nanostructures
  • Neuroscience and Neural Engineering
  • Gas Sensing Nanomaterials and Sensors
  • Organic Light-Emitting Diodes Research
  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Advanced Optical Sensing Technologies
  • Magnetic properties of thin films
  • Advancements in Battery Materials
  • Carbon Nanotubes in Composites
  • Organic Electronics and Photovoltaics
  • Molecular Junctions and Nanostructures
  • Analytical Chemistry and Sensors
  • Magnetic Field Sensors Techniques
  • Nanoporous metals and alloys

Zhejiang University
2018-2024

State Key Laboratory of Silicon Materials
2020-2024

Zhejiang University-University of Edinburgh Institute
2022

University of Alberta
2010-2017

Abstract Graphene with linear energy dispersion and weak electron–phonon interaction is highly anticipated to harvest hot electrons in a broad wavelength range. However, the limited absorption serious backscattering of hot‐electrons result inadequate quantum yields, especially mid‐infrared Here, we report macroscopic assembled graphene (nMAG) nanofilm/silicon heterojunction for ultrafast photodetection. The Schottky diode works 1.5–4.0 μm at room temperature fast response (20–30 ns, rising...

10.1002/inf2.12309 article EN cc-by InfoMat 2022-03-18

Abstract Among light-based free-space communication platforms, mid-infrared (MIR) light pertains to important applications in biomedical engineering, environmental monitoring, and remote sensing systems. Integrating MIR generation reception a network using two identical devices is vital for the miniaturization simplification of communications. However, conventional emitters receivers are not bidirectional due intrinsic limitations low performance often require cryogenic cooling. Here, we...

10.1038/s41467-020-20033-2 article EN cc-by Nature Communications 2020-12-11

Abstract Silicon is vital for its high abundance, vast production, and perfect compatibility with the well-established CMOS processing industry. Recently, artificially stacked layered 2D structures have gained tremendous attention via fine-tuning properties electronic devices. This article presents neuromorphic devices based on silicon nanosheets that are chemically exfoliated surface-modified, enabling self-assembly into hierarchical stacking structures. The device functionality can be...

10.1038/s41467-022-32884-y article EN cc-by Nature Communications 2022-09-05

Here, we report a broadband graphene-silicon field-effect coupled detector (FCD) sensitive to photons spanning from soft X-ray Near-Infrared region. Unlike traditional charge-coupled devices (CCD) relying on serial charge transfer between potential wells, the FCD integrates photo-sensing, integration, amplification, and random readout in one pixel. The integration well of semiconductor substrate amplification graphene transistor result highly response. In region, device displays high...

10.1109/led.2022.3167692 article EN IEEE Electron Device Letters 2022-04-18

Metal–semiconductor–metal (MSM) structures have been widely used and extensively investigated for ultraviolet (UV) detection. However, traditional MSM suffer from large dark currents, narrow detection bands, low collection efficiency. Optimizing these properties broadband in is essential improving the performance functionality broader optoelectronics applications. We report a high-performance graphene/thin silicon/graphene photodetector by realizing synergistic combination of graphene...

10.1063/5.0132028 article EN Applied Physics Letters 2023-02-13

Abstract 2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, signal‐to‐noise ratio. These hold promise addressing inherent technical challenges associated APDs, such as low light absorption coefficient, elevated noise current, substantial power consumption due to bias resulting only moderate current gain. In this work, a macro‐assembled graphene nanofilm (nMAG)/epitaxial silicon (epi‐Si)...

10.1002/adom.202400335 article EN Advanced Optical Materials 2024-05-16

Abstract The demand for high‐performance X‐ray detectors leads to material innovation efficient photoelectric conversion and carrier transfer. However, current are often susceptible chemical irradiation instability, complex fabrication processes, hazardous components, difficult compatibility. Here, we investigate a two‐dimensional (2D) with relatively low atomic number, Ti 3 C 2 T x MXenes, single crystal silicon detection single‐pixel imaging (SPI). We fabricate MXene/Si detector...

10.1002/inf2.12596 article EN cc-by InfoMat 2024-06-26

Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which exploited state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane effect multilayer graphene as grown on catalytic nickel surface by chemical vapor deposition. A negative of ∼10(4)% has been observed, persists even at room temperature. This is correlated with the shape 2D peak well occurrence D Raman spectrum as-grown...

10.1021/nl4030853 article EN Nano Letters 2014-04-03

Hot electron transistors (HETs) containing two-dimensional (2D) materials promise great potential in high-frequency analog and digital applications. Here, we experimentally demonstrate all-2D van der Waals (vdW) HETs formed by graphene, hBN, WSe2, which the polarity of carriers could be tuned changing bias conditions. We proposed a theoretical model to distinguish hot hole components ambipolar vdW HET. Importantly, both modes are achieved with pronounced saturation behavior as well...

10.1021/acsnano.9b07020 article EN ACS Nano 2019-11-22

Abstract π‐conjugated molecular organics such as rubrene, Alq 3 , fullerene, and PCBM have been used extensively over the last few decades in numerous organic electronic devices, including solar cells, thin‐film transistors, large‐area, low‐cost flexible displays. Rubrene emerged promising platforms for spin‐based classical quantum information processing, which has triggered significant research activity relatively new area of spintronics. Synthesis these materials a nanowire geometry, with...

10.1002/adfm.201102967 article EN Advanced Functional Materials 2012-04-18

In this letter, we investigated light-induced negative differential resistance (L-NDR) effects in a hybrid photodiode formed by graphene-silicon (GS) junction and neighboring graphene-oxide-Si (GOS) capacitor. We observed two distinct L-NDR originating from the gate-dependent surface recombination potential-well-induced confinement of photo-carriers GOS region. verified studying gate-controlled GS diode, which can distinguish photocurrent region with that (gate). A large peak-to-valley ratio...

10.1063/1.5026382 article EN Applied Physics Letters 2018-05-14

In this work, we demonstrate the instant detection of out-of-plane avalanche multiplication in graphene-oxide-semiconductor structure via strong field-effect coupling graphene channel with silicon photo gate. This situ can eliminate carriers' preamplification losses traditional charge-coupled devices (CCDs). By relying upon electrostatic coupling, a real-time signature space charge region be observed by both displacement and currents device. allows us to alternatively probe capability under...

10.1109/ted.2023.3262630 article EN IEEE Transactions on Electron Devices 2023-04-06

Graphene-based photodetectors have attracted much attention due to their unique properties, such as high-speed and wide-band detection capability. However, they suffer from very low external quantum efficiency in the infrared (IR) region lack spectral selectivity. Here, we construct a plasmon-enhanced macro-assembled graphene nanofilm (nMAG) based dual-band silicon photodetector. The Au plasmonic nanostructures improve absorption of long-wavelength photons with energy levels below Schottky...

10.1364/prj.496848 article EN Photonics Research 2023-07-31

We report spin valve measurements performed on vertically oriented array of amorphous rubrene (5,6,11,12-tetraphenylnaphthacene) nanowires. Compared to previously reported thin-film valves, nanowires exhibit significant suppression relaxation. Our results indicate spin-orbit interaction be the dominant mechanism and are consistent with recent theoretical works, which suggest admixture parameter as a crucial ingredient in determining relaxation length.

10.1063/1.4765655 article EN Applied Physics Letters 2012-11-05

Two-dimensional materials have modernized a broad interest in electronic devices. Along with many advantages, their atomic-level thickness makes them sensitive under high electrical stress. This work proposes protection design using Graphene/Silicon (Gr/Si) Schottky diode as the protective device, which helps to improve endurance for unwanted fluctuations operating voltage of 2D heterostructure-based In this scheme, heterostructure was configured parallel device (Gr/Si diode) measurements....

10.1109/jeds.2022.3214662 article EN cc-by IEEE Journal of the Electron Devices Society 2022-01-01

Current-perpendicular-to-plane (CPP) magnetoresistance (MR) effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices artificial layered structures ferromagnets non-magnets, these devices, MR manifests, due to spin-dependent carrier transmission through constituent layers. In this work, we explore another class structure which multilayer graphene (MLG) is grown on a metallic substrate by chemical vapor deposition...

10.3390/electronics2030315 article EN Electronics 2013-09-11

Germanium (Ge) based devices are widely used in optical communications and image sensors due to the brilliant properties of Ge (high carrier mobility, excellent CMOS compatibility). Here, by integrating with nanofilms macroscopic-assembled-graphene (nMAG) - large-scale highly crystalline graphene nanofilm, we demonstrated a high-performance Schottky diode. The device shows detection bandwidth 1.5 4 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/iedm19574.2021.9720694 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2021-12-11

Charge-coupled devices (CCD) allow imaging by photodetection, charge integration, and serial transfer of the stored packets from multiple pixels to readout node. The functionality CCD can be extended non-destructive in-situ integrated charges replacing metallic electrodes with graphene in metal-oxide-semiconductors (MOS) structure a pixel. electrostatic capacitive coupling substrate allows Fermi level tuning that reflects density depletion well. This work demonstrates monitoring interpixel...

10.3390/s22239341 article EN cc-by Sensors 2022-11-30

Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack of weakly coupled multilayer graphene as grown by chemical vapor deposition. This has been characterized function temperature and tilt angle the magnetic field with respect to interlayer current. To our knowledge, this first experimental report on dependent ILMR graphitic systems. Our data agree qualitatively existing theories massless Dirac Fermion However, sharper change observed varied. A physical explanation...

10.1063/1.4934642 article EN Journal of Applied Physics 2015-10-28
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