A5070777428- CCD and CMOS Imaging Sensors
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Neuroscience and Neural Engineering
- Graphene research and applications
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- 2D Materials and Applications
- 3D IC and TSV technologies
- Advanced Optical Imaging Technologies
- Thin-Film Transistor Technologies
Zhejiang University
2022-2024
State Key Laboratory of Silicon Materials
2022
Metal–semiconductor–metal (MSM) structures have been widely used and extensively investigated for ultraviolet (UV) detection. However, traditional MSM suffer from large dark currents, narrow detection bands, low collection efficiency. Optimizing these properties broadband in is essential improving the performance functionality broader optoelectronics applications. We report a high-performance graphene/thin silicon/graphene photodetector by realizing synergistic combination of graphene...
Heterojunction devices based on two-dimensional materials have been widely studied in the fields of electronics and optoelectronics. As complexity chip system increases, ability to realize multi-function a single device is increasingly demand. Here, we propose multifunctional graphene/silicon heterojunction, which can operate photodetection mode or tunable rectifier mode. The heterojunction barrier by external electric field. range covers ultraviolet visible, responsivity reach 51 A/W 495 at...
Graphene-silicon charge-sampling devices (CSD) can achieve remarkable sensitivity to weak light detection, benefiting from intrinsic amplification and nondestructive signal readout, showing vast application prospects. Since the response readout strategy significantly differ traditional photodetectors, a dedicated integrated circuit (ROIC) is essential, specifically designed be compatible with nonuniformity of CSDs while ensuring output high linearity. Here, we investigate technique design an...