- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Graphene research and applications
- Quantum Dots Synthesis And Properties
- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- Ga2O3 and related materials
- Perovskite Materials and Applications
- Advancements in Battery Materials
- ZnO doping and properties
- solar cell performance optimization
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Photovoltaic System Optimization Techniques
- Magnetic Properties and Synthesis of Ferrites
- Metal and Thin Film Mechanics
- Advanced Memory and Neural Computing
- Multiferroics and related materials
- Laser Design and Applications
- Advanced Machining and Optimization Techniques
- Advanced Semiconductor Detectors and Materials
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Conducting polymers and applications
- Laser-induced spectroscopy and plasma
University of Lahore
2025
Minzu University of China
2024
Zhejiang University
2021-2024
University of Engineering and Technology Lahore
2024
Government College University, Faisalabad
2023-2024
University of the Punjab
2015-2023
State Key Laboratory of Silicon Materials
2022-2023
Peking University
2019-2022
Beijing Institute of Technology
2015-2022
Zhejiang University-University of Edinburgh Institute
2022
Abstract Self‐powered broadband photodetectors exhibit excellent self‐powered and wide‐band photoresponse from visible to infrared region attract enormous attention due their promising applications in imaging, sensing, optical communication. PbSe colloidal quantum dots (CQDs) halide perovskites nanocrystals (NCs) are commonly used for strong absorption capability, tunable bandgap, high aspect ratio. However, suffering low charge carrier mobility trap density, the performance of individual...
Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, bulk-heterojunctions (BHJs) photodetectors have shown high detectivity because suppressed dark current and photocurrent, which due to larger built-in electric potential within depletion region significantly...
Abstract Over the past 70 years, semiconductor industry has undergone transformative changes, largely driven by miniaturization of devices and integration innovative structures materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) graphene are pivotal in overcoming limitations silicon-based technologies, offering approaches transistor design functionality, enabling atomic-thin channel transistors monolithic 3D integration. We review important progress...
Embedding the functional nanostructures into a lightweight nanocarbon framework is very promising for developing high performance advanced electrodes rechargeable batteries. Here, to realize workable capacity, core-shell (FeSe2 /C) are embedded carbon nanotube (CNT) via facile wet-chemistry approach accompanied by thermally induced selenization. The CNT offers 3D continuous routes electronic/ionic transfer, while macropores provide adequate space mass loading of FeSe2 /C. However, shell not...
Abstract M-type barium hexaferrites (BaM) with the substitution of Ce–Dy ions were synthesized using sol-gel auto-ignition method. The prepared materials explored for their application as a permanent magnet and microwave absorbing material. structural properties, phase evaluation, micro-strain, morphological analysis, magnetic behaviour, properties optical studied by employing various techniques. parameters identification obtained Rietveld refinement confirmed formation an hexaferrite...
Abstract The demand for charge‐coupled device (CCD) imagers has surged exponentially during the last decade owing to their exceptionally high quality and low noise imaging. However, they are still confronting performance constraints of operation power, speed, limited charge integration. Here, electric‐dipole gated phototransistor without external gate bias is reported by using high‐ k HfO 2 dielectric material. electrostatic coupling photogenerated charges from Si with graphene channel...
The article explores the enhanced performance of photodetectors based on nanocomposites CsPbI 3 nanorods and PbSe QDs by studying their impact charge carrier dynamics optoelectronic properties, thus to understand underlain mechanism.
Sustainability ensures well-being for people and communities worldwide helps shape the world's present future. A global transformation is required by adopting renewable energy sources to achieve sustainability. trends have been examined using this study period 1992-2018 G20 countries. The uses indicators like ecological footprints, natural resources, (RE), non-renewable (NRE), along with gross domestic product (GDP) capital formation. cross-sectional-ARDL approach has used examine short-...
Abstract The emerging flexible device technologies have fascinated the modern optoelectronic industry owing to their invincible properties such as wearable, stretchable, smart, energy‐efficient, scalability, cost‐effective, and high performance. However, there is still room for improvements performance, reliability, mass production. This research work fabricates laser‐induced graphene (LIG) interdigitated electrodes based on UV photodetectors over polyimide substrate, using...
The revolution in industrialization throughout the world has boosted utilization of machinery and shifted muscle power to machines. use machines various sectors increased demand petroleum based lubricants. Lubricants act as an antifriction media, facilitating smoother working, reducing risks undesirable frequent failures maintaining reliable machine operations among different rotating parts Due depleting resources environment concern, non-edible vegetable oil lubricants well. In this regard,...
Monoclinic gallium oxide (Ga2O3) has been grown on (0001) sapphire (Al2O3) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship confirmed to be [010]( ) β-Ga2O3||[ ](0001)Al2O3 via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray (XRD) measurement. Crystalline quality is improved surface becomes flatter with increasing growth temperature, a best full width at half maximum (FWHM) of XRD ω-rocking curve ( plane root...
Abstract The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their cost complex process make them less attractive consumer market industrial applications. Indium nitride (InN) can be a potential candidate to fulfill requirements due simple low‐cost as well unique properties such narrow direct bandgap electron mobility. In this work, 3 µm thick InN epilayer is on (0001) gallium (GaN)/Sapphire template under...
Given that plant disease is the primary factor contributing to damage in most plants, decision makers agriculture industry are highly interested enhancing prediction strategies detect illness plants at an early stage. This crucial for ensuring timely and effective care. Classifying healthy soybean a dependable efficient use of noninvasive techniques like machine learning (ML). In this work, we used ML enhance smart forecasting model diseases. We utilized two feature selection techniques,...
Irradiation-aging technology is still in the preliminary exploration stage worldwide. Therefore, this study, we investigated effects of high-energy electron beam irradiation on aroma components and quality Luzhou-flavor liquor irradiated with 2, 4, 6, 8, 10, 12 kGy after storage for 30, 90, 180, 270, 360 d. Using fold change analysis t-test, eight possible markers were confirmed, including 2,3 butanediol (levulinic), (endocyclic), propionic acid, isobutyric ethyl propionate,...
This study highlights the scratch adhesion failure characterization and tribo-mechanical properties of physical vapor deposited (Cr, Ti) N coating on AA7075-T6 by using magnetron-sputtering technique. The surface morphology, microstructure chemical composition CrTi/CrTiN film were inspected an optical microscope, scanning electron microscope (SEM) incorporated with energy dispersive X-ray spectroscopy (EDX) in addition to focused ion beam milling. substrate critical load about 1261 mN was...
Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In research, we presented modified analytical and simulation results InAs/GaAs QD superlattice (QDSL). We applied tight binding model for the investigation ground state energies using timeindependent Schrödinger equation (SE) effective mass approximation. It...