Lei Liao

ORCID: 0000-0003-1325-2410
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About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • Graphene research and applications
  • ZnO doping and properties
  • Nanowire Synthesis and Applications
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Photonic Crystal and Fiber Optics
  • Ga2O3 and related materials
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Fiber Laser Technologies
  • Advancements in Battery Materials
  • Quantum Dots Synthesis And Properties
  • Advanced Sensor and Energy Harvesting Materials
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Fiber Optic Sensors
  • Conducting polymers and applications
  • Supercapacitor Materials and Fabrication
  • Carbon Dioxide Capture Technologies
  • Copper-based nanomaterials and applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Transition Metal Oxide Nanomaterials
  • Advanced biosensing and bioanalysis techniques

Hunan University
2017-2025

Institute of Physics
2006-2025

Chinese Academy of Sciences
2006-2025

Guilin University of Technology
2014-2025

Changsha University
2018-2025

Chongqing 2D Materials Institute (China)
2025

University of Chinese Academy of Sciences
2022-2025

Southwest University of Science and Technology
2011-2025

Southwestern University of Finance and Economics
2025

Northwest A&F University
2025

Abstract Unlike the unstable black phosphorous, another two-dimensional group-VA material, antimonene, was recently predicted to exhibit good stability and remarkable physical properties. However, synthesis of high-quality monolayer or few-layer antimonenes, sparsely reported, has greatly hindered development this new field. Here, we report van der Waals epitaxy growth antimonene monocrystalline polygons, their atomical microstructure in ambient condition. The high-quality, polygons can be...

10.1038/ncomms13352 article EN cc-by Nature Communications 2016-11-15

A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones 2570 W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of tuned the ultrahigh electrostatic field from ferroelectric polarization. photoresponse wavelengths extended into near-infrared (0.85-1.55 μm).

10.1002/adma.201503340 article EN Advanced Materials 2015-09-16

Two types (imine and boronate) of covalent organic frameworks (COFs) having a porphyrin unit have been synthesized. The two highly crystalline COFs (COF-366 COF-66) display excellent chemical thermal stability are permanently porous. Two-dimensional extended layered structures the demonstrate very high charge carrier mobility values (8.1 cm2 V−1 s−1).

10.1021/cm201140r article EN Chemistry of Materials 2011-08-22

Black phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as channel material in field-effect transistors (FETs). However, the intrinsic instability of BP causes practical concern transistor performance must also be improved. Here, use metal-ion modification to enhance both stability sheets is described. Ag+ spontaneously adsorbed on surface via cation-π interactions passivates lone-pair electrons P thereby...

10.1002/adma.201703811 article EN Advanced Materials 2017-09-28

High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal MoS2. Benefiting from ultrathin within 0.6 nm, is significantly reduced 158 31 meV with small resistance. As service our authors readers, this journal provides supporting information supplied by authors. Such materials peer reviewed may be re-organized for online delivery, but not copy-edited or typeset....

10.1002/adma.201602757 article EN Advanced Materials 2016-07-08

Transparent conductive film on plastic substrate is a critical component in low-cost, flexible, and lightweight optoelectronics. Industrial-scale manufacturing of high-performance transparent flexible needed to enable wide-ranging applications. Here, we demonstrate continuous roll-to-roll (R2R) production based metal nanowire network fully encapsulated between graphene monolayer substrate. Large-area grown Cu foil via R2R chemical vapor deposition process was hot-laminated onto nanowires...

10.1021/acs.nanolett.5b01531 article EN Nano Letters 2015-05-28

We report the structure, optical, and gas-sensing properties of ZnO nanorods with different diameters. Vertically well-aligned homogeneous were grown along c-axis orientation. The shift Raman scattering E2 (high) mode photoluminescence (PL) spectra used to study dependences nanorod diameters on stress oxygen vacancy. Gas sensors prepared tested for detection C2H5OH H2S (100 ppm) in air. It was found that thin have a significantly better sensing performance than thick nanorods. provide...

10.1021/jp065963k article EN The Journal of Physical Chemistry C 2007-01-18

2D Molybdenum disulfide (MoS 2 ) is a promising candidate material for high‐speed and flexible optoelectronic devices, but only with low photoresponsivity. Here, large enhancement of photocurrent response obtained by coupling few‐layer MoS Au plasmonic nanostructure arrays. nanoparticles or nanoplates placed onto surface can enhance the local optical field in layer, due to localized plasmon (LSP) resonance. After depositing 4 nm thick sparsely phototransistors, doubled increase observed. The...

10.1002/smll.201403422 article EN Small 2015-01-28

We report the properties of a field effect transistor (FET) and gas sensor based on CuO nanowires. nanowire FETs exhibit p-type behavior. Large-scale thin-film transistors (104 devices in 25 mm2 area) are fabricated we effectively demonstrate their enhanced performance. Furthermore, exhibits high fast response to CO at 200 °C, which makes it promising candidate for poisonous sensing nanodevice.

10.1088/0957-4484/20/8/085203 article EN Nanotechnology 2009-02-02

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, saturation velocity, and large critical current density. Herein we report a new approach the scalable fabrication high-performance graphene transistors with transferred gate stacks. Specifically, arrays stacks are first patterned on sacrificial substrate, then onto arbitrary substrates top. A self-aligned process, enabled by unique structure stacks, is used...

10.1073/pnas.1205696109 article EN Proceedings of the National Academy of Sciences 2012-07-02

We report the synthesis of vertical silicon nanowire array through a two-step metal-assisted chemical etching highly doped n-type (100) wafers in solution hydrofluoric acid and hydrogen peroxide. The morphology as-grown nanowires is tunable from solid nonporous nanowires, nonporous/nanoporous core/shell to entirely nanoporous by controlling peroxide concentration solution. porous retain single crystalline structure crystallographic orientation starting wafer are electrically conductive...

10.1021/nl903030h article EN Nano Letters 2009-10-06

Abstract Strain engineering is a promising method to manipulate the electronic and optical properties of two-dimensional (2D) materials. However, with weak van der Waals interaction, severe slippage between 2D material substrate could dominate bending or stretching processes, leading inefficiency strain transfer. To overcome this limitation, we report simple by encapsulating monolayer in flexible PVA through spin-coating approach. The strong interaction force spin-coated ensures mechanical...

10.1038/s41467-020-15023-3 article EN cc-by Nature Communications 2020-03-02

Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and highest saturation current (526 μA/μm) any transistor reported date.

10.1002/adma.201402008 article EN Advanced Materials 2014-07-28

Abstract 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorus, have become the most potential semiconductor materials in field of optoelectronic devices due to their extraordinary properties. Owing layer‐dependent appropriately sized bandgaps, photodetectors based on various are designed manufactured rationally. Utilizing unique properties many surprising physical phenomena junctions can be obtained after different stacked together. This makes...

10.1002/adom.201800441 article EN Advanced Optical Materials 2018-08-28

Millimeter-size single-crystal monolayer graphene is synthesized on polycrystalline Cu foil by a method that involves suppressing loss evaporation of the at high temperature under low pressure. This significantly diminishes number domains, and large single crystal domains up to ∼2 mm in size are grown. As service our authors readers, this journal provides supporting information supplied authors. Such materials peer reviewed may be re-organized for online delivery, but not copy-edited or...

10.1002/adma.201204000 article EN Advanced Materials 2013-02-06

Although graphene is extremely inert in chemistry because of the giant delocalized π electron system, various methods have been developed to achieve its efficient chemical modification. Covalent effective modulate physical properties graphene. By converting sp(2) hybridized carbon atoms sp(3) ones, new two-dimensional (2D) materials and 2D superlattices with fascinating features beyond mother could be built from scaffold, greatly expanding family attraction. In this Perspective, power...

10.1021/ja5048297 article EN Journal of the American Chemical Society 2014-08-15

Nanothick metallic transition metal dichalcogenides such as VS2 are essential building blocks for constructing next-generation electronic and energy-storage applications, well exploring unique physical issues associated with the dimensionality effect. However, two-dimensional (2D) layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we report a facile chemical vapor deposition route direct production of crystalline nanosheets sub-10...

10.1021/acs.nanolett.7b01914 article EN Nano Letters 2017-07-27
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