Black phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as channel material in field-effect transistors (FETs). However, the intrinsic instability of BP causes practical concern transistor performance must also be improved. Here, use metal-ion modification to enhance both stability sheets is described. Ag+ spontaneously adsorbed on surface via cation-π interactions passivates lone-pair electrons P thereby...

Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in MSM structure photodetectors, enhancements photoresponsivity can be realized. Thus, strengthening field is efficacious way make detection capability better. In this study, we fabricate a single GaAs photodetector with superior performance by doping-adjusting Fermi...

We report the first demonstration of an all solid-state heterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable space-based observatories. The uses a NbN superconducting hot-electron bolometer as mixer and quantum cascade laser operating at 2.8THz local oscillator. measure double sideband noise temperature 1400K 4.2K, find free-running QCL has sufficient power stability practical receiver, demonstrating unprecedented combination sensitivity stability.

The Boltzmann distribution of electrons induced fundamental barrier prevents subthreshold swing (SS) from less than 60 mV dec-1 at room temperature, leading to high energy consumption MOSFETs. Herein, it is demonstrated that an aggressive introduction the negative capacitance (NC) effect ferroelectrics can decisively break limit governed by "Boltzmann tyranny". Such MoS2 negative-capacitance field-effect transistors (NC-FETs) with self-aligned top-gated geometry here pull down SS value 42.5...

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer a piezoelectric GaN nanowire (NW) as local gate, and process is employed to define source/drain electrodes. fabrication method allows preservation of intrinsic property suppresses scattering center density in MoS2/GaN interface, which results high electrical photoelectric performances. channel lengths ∼200 nm...

Abstract Massive data processing with high computing efficiency and low operating power is required owing to the rapid development of artificial intelligence information technology. However, von Neumann structure system separated memory processor can cause large energy consumption a running speed during massive processing. Therefore, brain‐inspired neuromorphic developed, that provide hardware support for emulating biological synaptic functions realizing highly intensive consumption. As...

With the popularization of electronic devices and demand for portability, low-power consumption has become crucial integrated circuit chips. Two-dimensional (2D) semiconductors offer significant potential in constructing due to their ultrathin thickness, enabling fully depletion operation. However, fabricating these 2D devices, such as negative-capacitance transistors or tunneling transistors, often requires multiple layers gate dielectrics channel band engineering, adding complexity...

Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However, rich surface states result large dark current hinder development high-performance nanowire photodetectors. In this paper, influence mechanism sulfur passivation on a single GaAs photodetector been studied. The is significantly reduced by about 30 times after passivation. We confirm that origin reduction decrease state density....

Abstract Photoinduced memory devices with fast program/erase operations are crucial for modern communication technology, especially high‐throughput data storage and transfer. Although some photoinduced memories based on 2D materials have already demonstrated desirable performance, the speed is still limited to hundreds of micro‐seconds. A high‐speed MoS 2 /single‐walled carbon nanotubes (SWCNTs) network mixed‐dimensional van der Waals heterostructure here. An intrinsic ultrafast charge...

Abstract Background Osteoarthritis (OA) is a prevalent disease plaguing the elderly. Recently, chondrocyte ferroptosis has been demonstrated to promote progression of OA. Peroxisome proliferator-activated receptor-γ (PPARγ) an important factor in maintaining cartilage health. However, relationship between PPARγ and OA its mechanism completely unclear. Methods We established surgically induced knee rat model investigate Rat specimens were collected for Safranin O/Fast Green staining...

MoS2 field-effect transistors (FETs) based on high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> gate insulators (such as ZrO2, HfO2, and Al2O3) have been explored. However, the preparation of dielectrics typically requires high-vacuum equipment, leading to high cost. In this report, ZrO2 were prepared by a facile ultraviolet-ozone (UVO)-assisted solution process. The...

In order to realize the promising potential of MoS 2 as alternative channel material, it is essential achieve high‐performance top‐gated field‐effect transistors (FETs), especially since back‐gated counterparts cannot control device individually. Although uniform high‐ k dielectric films, such HfO , can be obtained through introduction artificial nucleation sites on fabricate FETs, this would inevitably degrade their channel/dielectric interface quality, induce significant charged impurity...

A new type of ferroelectric FET based on the single nanowire is demonstrated. The design side-gated architecture not only simplifies manufacturing process but also avoids any postdeposition damage to organic film. devices exhibit excellent performances for nonvolatile memory applications, and hysteresis can be effectively modulated by adjusting side-gate geometries. In recent years, field-effect transistors (FeFETs) have been widely studied as an important due their remarkable...

Although plenty of two-dimensional (2D) semiconductor heterostructure photodetectors have been studied, there is still a lack systematic comparison and analysis about photovoltaic photoconductive 2D photodetectors. Taking advantage the van der Waals heterostructure, this work constructs (PV) GeSe/MoS2 (PC) GeSe/graphene photodetector, respectively. The PC photodetector achieves relatively higher photoresponsivity (R), where R can reach up to 104 AW−1. PV by contrast, obtains faster...

Sterol carrier protein 2 (SCP2) is highly expressed in human osteoarthritis (OA) cartilage, accompanied by ferroptosis hallmarks, especially the accumulation of lipid hydroperoxides (LPO). However, role SCP2 chondrocyte remains unexplored. Here, we identify that transports cytoplasmic LPO to mitochondria RSL3-induced ferroptosis, resulting mitochondrial membrane damage and release reactive oxygen species (ROS). The localization on associated with potential, but independent microtubules...

Two-dimensional (2D) semiconductors hold significant potential for the fabrication of self-powered reconfigurable devices due to their atomically thin body thickness and excellent heterogeneous integration capabilities. Despite these advantages, regulating polarity in 2D remains challenging, complex heterostructures hinder practical applications. Here, we demonstrate a metal-semiconductor-metal (MSM) two-terminal structure achieve multiple functions MoS2 devices. By applying different...

Recently, black phosphorus (BP) has attracted enormous attention as the potential materials for next‐generation photonic device applications due to high carrier mobility and narrow bandgap. However, metal–semiconductor–metal (MSM) structure of BP photodetectors cannot achieve simultaneously photoresponsivity fast photoresponse, its natural surface defects, thinness absorption layer, instability in air, which limits application MSM photodetectors. Here, infrared with multilayer sandwiched...