Zhepeng Zhang

ORCID: 0000-0002-9870-0720
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About
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Research Areas
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Perovskite Materials and Applications
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Tribology and Lubrication Engineering
  • Lubricants and Their Additives
  • Advanced Photocatalysis Techniques
  • Plasmonic and Surface Plasmon Research
  • Tribology and Wear Analysis
  • ZnO doping and properties
  • Nanowire Synthesis and Applications
  • Strong Light-Matter Interactions
  • Advanced Nanomaterials in Catalysis
  • Hydraulic and Pneumatic Systems
  • Semiconductor materials and devices
  • Diamond and Carbon-based Materials Research
  • Surface Modification and Superhydrophobicity
  • Topological Materials and Phenomena
  • Nanocomposite Films for Food Packaging
  • Advanced Fiber Laser Technologies
  • Spectroscopy and Chemometric Analyses
  • Electrocatalysts for Energy Conversion
  • Gas Sensing Nanomaterials and Sensors

Yanshan University
2023-2025

National University of Singapore
2020-2025

Jiangsu University
2024-2025

Stanford University
2023-2024

SLAC National Accelerator Laboratory
2024

Ningbo University
2021-2023

Air Force Medical University
2022

Peking University
2016-2021

Xi'an University of Science and Technology
2021

Beijing National Laboratory for Molecular Sciences
2016-2020

Monolayer transition metal dichalcogenides (TMDs) have become essential two-dimensional materials for their perspectives in engineering next-generation electronics. For related applications, the controlled growth of large-area uniform monolayer TMDs is crucial, while it remains challenging. Herein, we report direct synthesis 6-inch molybdenum disulfide on solid soda-lime glass, through a designed face-to-face metal-precursor supply route facile chemical vapor deposition process. We find that...

10.1038/s41467-018-03388-5 article EN cc-by Nature Communications 2018-03-01

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have emerged as attractive platforms in next-generation nanoelectronics and optoelectronics for reducing device sizes down to a 10 nm scale. To achieve this, the controlled synthesis of wafer-scale single-crystal TMDs with high crystallinity has been continuous pursuit. However, previous efforts epitaxially grow TMD films on insulating substrates (e.g., mica sapphire) failed eliminate evolution antiparallel domains...

10.1021/acsnano.0c01478 article EN ACS Nano 2020-04-08

Nanothick metallic transition metal dichalcogenides such as VS2 are essential building blocks for constructing next-generation electronic and energy-storage applications, well exploring unique physical issues associated with the dimensionality effect. However, two-dimensional (2D) layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we report a facile chemical vapor deposition route direct production of crystalline nanosheets sub-10...

10.1021/acs.nanolett.7b01914 article EN Nano Letters 2017-07-27

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that atomically thin layered are not able to show memristive effect vertically stacked structure, until recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming scaling limit sub-nanometer. Herein, nonvolatile resistance switching (NVRS) phenomenon hexagonal boron nitride (h-BN), a typical insulator, is reported. The h-BN atomristors studied using...

10.1002/adma.201806790 article EN Advanced Materials 2019-02-17

2D metallic transition-metal dichalcogenides (MTMDs) have recently emerged as a new class of materials for the engineering novel electronic phases, superconductors, magnets, well applications. However, mechanical exfoliation route is predominantly used to obtain such flakes, but batch production remains challenging. Herein, van der Waals epitaxial growth monocrystalline, 1T-phase, few-layer VSe2 nanosheets on an atomically flat mica substrate via "one-step" chemical vapor deposition method...

10.1002/adma.201702359 article EN Advanced Materials 2017-08-14

Abstract Two-dimensional metallic transition metal dichalcogenides are emerging as prototypes for uncovering fundamental physical phenomena, such superconductivity and charge-density waves, well engineering-related applications. However, the batch production of envisioned remains challenging, which has hindered aforementioned explorations. Herein, we fabricate thickness-tunable tantalum disulfide flakes centimetre-sized ultrathin films on an electrode material gold foil via a facile chemical...

10.1038/s41467-017-01089-z article EN cc-by Nature Communications 2017-10-10

A growth-temperature-mediated two-step chemical vapor deposition strategy is designed to synthesize MoS2 /WS2 and WS2 /MoS2 stacks on Au foils. Predominantly A-A stacked A-B are selectively achieved confirmed. Relative enhancements or reductions in photocatalytic activities of observed under illumination, because the type-II band alignment enables directional electron flow from electrode active site.

10.1002/adma.201603174 article EN Advanced Materials 2016-10-14

Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce MoS2 by annealing at 600 °C an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that Mo 3d5/2 core peak 230.1 eV emerges the annealed associated with nonstoichiometric MoSx (0 < x 2), Raman enhancement of ∼380 cm-1 is attributed sulfur...

10.1021/acsnano.3c02103 article EN cc-by ACS Nano 2023-07-07

Abstract 1D nanowires of all‐inorganic lead halide perovskites represent a good architecture for the development polarization‐sensitive optoelectronic devices due to their high absorption efficient, emission yield, and dielectric constants. However, among as‐fabricated perovskite with lateral dimensions hundreds nanometers so far, optical anisotropy is hindered rarely explored owing invalidating electrostatic mismatch in physical dimensions. Here, well‐aligned CsPbBr 3 CsPbCl thickness T...

10.1002/adma.201801805 article EN Advanced Materials 2018-06-19

Two-dimensional (2D) metal-semiconductor transition-metal dichalcogenide (TMDC) vertical heterostructures play a crucial role in device engineering and contact tuning fields, while their direct integration still challenging. Herein, robust epitaxial growth method is designed to construct multiple lattice-matched 2D TMDC stacks (VSe2/MX2, M: Mo, W; X: S, Se) by two-step chemical vapor deposition method. Intriguingly, the metallic VSe2 preferred nucleate extend from energy-favorable edge site...

10.1021/acsnano.8b08677 article EN ACS Nano 2018-12-26

Strong coupling of two-dimensional semiconductor excitons with plasmonic resonators enables control light-matter interaction at the subwavelength scale. Here we develop such strong in nanogap resonators, which allows modification exciton strength by altering electromagnetic environments nearby monolayers. Using this system, not only demonstrate a large vacuum Rabi splitting up to 163 meV and features photoluminescence spectra but also reveal that effective number contributing can be reduced...

10.1103/physrevlett.124.063902 article EN Physical Review Letters 2020-02-13

Among two-dimensional (2D) transition-metal dichalcogenides (TMDCs), platinum diselenide (PtSe2) stands in a distinct place due to its fancy transition from type-II Dirac semimetal semiconductor with thickness variation bulk monolayer (1 ML) and the related versatile applications especially mid-infrared detectors. However, achieving atomically thin PtSe2 is still challenging issue. Herein, we have designed facile chemical vapor deposition (CVD) method achieve synthesis of 1T-PtSe2 on an...

10.1021/acsnano.9b04312 article EN ACS Nano 2019-06-24

Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating direct growth monolayer h-BN Au foil with...

10.1021/acsnano.7b01537 article EN ACS Nano 2017-03-25

Mixed-dimensional van der Waals (vdW) heterostructures between one-dimensional (1D) perovskite nanowires and two-dimensional (2D) transition metal dichalcogenides (TMDCs) hold great potential for novel optoelectronics light-harvesting applications. However, the ultrafast carrier dynamics 1D 2D TMDCs are currently not well understood, which is critical related optoelectronic Here we demonstrate vdW of CsPbBr3 nanowire/monolayer MoS2 WSe2 further present systematic investigations on their...

10.1021/acs.jpclett.8b00260 article EN The Journal of Physical Chemistry Letters 2018-03-13

Atomically thin transition-metal dichalcogenides (TMDCs) have received substantial interest due to their typical thickness-dependent optical and electronic properties related applications in optoelectronics. However, the large-scale, thickness-tunable growth of such materials is still challenging. Herein, we report a fast wedding-cake-like MoS2 flakes on 6-in. soda-lime glass by using NaCl-coated Mo foils as metal precursors. The thicknesses are tuned from one layer (1L) >20L controlling...

10.1021/acsnano.9b00277 article EN ACS Nano 2019-02-20

2D metallic TaS2 is acting as an ideal platform for exploring fundamental physical issues (superconductivity, charge-density wave, etc.) and engineering novel applications in energy-related fields. The batch synthesis of high-quality nanosheets with a specific phase crucial such issues. Herein, the successful vertically oriented 1T-TaS2 on nanoporous gold substrates reported, via facile chemical vapor deposition route. By virtue abundant edge sites excellent electrical transport property,...

10.1002/adma.201705916 article EN Advanced Materials 2018-03-07

Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory experiments have found that uniaxial tensile strain improve electron mobility monolayer MoS

10.1021/acsnano.3c08996 article EN ACS Nano 2024-06-26

Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs), the complement of 2D semiconducting TMDCs, have attracted extensive attentions in recent years because their versatile properties such as superconductivity, charge density wave, and magnetism. To promote investigations fantastic broad applications, preparation large-area, high-quality, thickness-tunable MTMDCs has become a very urgent topic great efforts been made. This topical review therefore focuses on introduction...

10.1088/1361-6528/aaff19 article EN Nanotechnology 2019-01-16

2D metallic transition metal dichalcogenides (MTMDCs) are benchmark systems for uncovering the dimensionality effect on fascinating quantum physics, such as charge-density-wave (CDW) order, unconventional superconductivity, and magnetism, etc. However, scalable thickness-tunable syntheses of envisioned MTMDCs still challenging. Meanwhile, origin CDW order at limit is controversial. Herein, direct synthesis wafer-scale uniform monolayer 2H-TaSe2 films flakes Au foils by chemical vapor...

10.1002/adma.201804616 article EN Advanced Materials 2018-09-14
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