A5090082975- 2D Materials and Applications
- Graphene research and applications
- Crystal Structures and Properties
- MXene and MAX Phase Materials
- Inorganic Fluorides and Related Compounds
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Supercapacitor Materials and Fabrication
- Advanced Sensor and Energy Harvesting Materials
- Luminescence and Fluorescent Materials
- Mineralogy and Gemology Studies
- Semiconductor Quantum Structures and Devices
- Electrocatalysts for Energy Conversion
- Advancements in Battery Materials
- Nanoporous metals and alloys
- X-ray Diffraction in Crystallography
- Gold and Silver Nanoparticles Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Topological Materials and Phenomena
- Nanowire Synthesis and Applications
- Advanced Photocatalysis Techniques
- Catalytic Processes in Materials Science
- Heusler alloys: electronic and magnetic properties
- Polyoxometalates: Synthesis and Applications
- Atmospheric Ozone and Climate
Peking University
2023-2025
Xinjiang University
2023-2024
Beijing National Laboratory for Molecular Sciences
2024
Beihang University
2022
Abstract Over the past 70 years, semiconductor industry has undergone transformative changes, largely driven by miniaturization of devices and integration innovative structures materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) graphene are pivotal in overcoming limitations silicon-based technologies, offering approaches transistor design functionality, enabling atomic-thin channel transistors monolithic 3D integration. We review important progress...
Abstract One‐dimensional (1D) ultrafine nanowires of different materials, especially noble metals, present an enticing prospect for catalyst applications due to their numerous active sites exposed. However, the controllable synthesis and stability issues hinder practical applications. Herein, single‐walled carbon nanotubes (SWCNTs) are adopted as template synthesize stabilize metals. Furthermore, oxygen reduction reaction (ORR) is employed application demonstration. Impressively, prepared...
Abstract 2D semiconducting transition metal dichalcogenides (TMDCs), most with a formula of MX 2 (M=Mo, W; X=S, Se, etc.), have emerged as promising channel materials for next‐generation integrated circuits, considering their dangling‐bond‐free surfaces, moderate bandgaps, relatively high carrier mobilities, etc. Wafer‐scale preparation films holds fundamental significance realizing applications. Chemical vapor deposition (CVD) is recognized the method preparing electronic‐grade films. This...
Abstract 1D structures/patterns (e.g., line defect arrays, Moiré patterns) embedded in 2D materials provide fascinating platforms for exploring versatile intriguing phenomena, example, Luttinger liquids and charge density waves (CDWs). Despite persistent efforts, incorporating periodic patterns into remains an ongoing pursuit. Herein, the direct preparation of monolayer 1D‐defect‐induced Co 4 Te 7 superlattices (with lines upper layer 1T‐CoTe 2 ) is reported, on lattice‐matched SrTiO 3 (001)...
Phase engineering offers a novel approach to modulate the properties of materials for versatile applications. Two-dimensional (2D) GaTe, an emerging III-VI semiconductor, can exist in hexagonal (h) or monoclinic (m) phases with fascinating phase-dependent (e.g., isotropic anisotropic electrical transport). However, key factors governing GaTe remain obscure. Herein, we achieve phase modulation by tuning two previously overlooked factors: layer thickness and strain. The precise...
Enhancing the birefringence of compounds by “two steps in one”: a synergistic strategy stereochemically active lone pairs [SeO 3 ] and distorted [VO 6 polyhedra.
Single-crystal Au(111), renowned for its chemically inert surface, long-range "herringbone" reconstruction, and high electrical conductivity, has long served as an exemplary template in diverse fields, e.g., crystal epitaxy, electronics, electrocatalysis. However, commercial Au(111) products are high-priced limited to centimeter sizes, largely restricting their broad applications. Herein, a low-cost, high-reproducible method is developed produce 4 in. single crystals from Au foils, via...
The epitaxial growth of wafer-scale two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDCs) single crystals is the key premise for their applications in next-generation electronics. Despite significant advancements, some fundamental factors affecting epitaxy have not been fully uncovered, e.g., interface coupling strength, adlayer-substrate lattice matching, substrate step-edge-guiding effects, etc. Herein, we develop a model system to tackle these issues concurrently,...
Enhanced second-harmonic generation (SHG) responses are reported in monolayer transition metal dichalcogenides (e.g., MX2 , M: Mo, W; X: S, Se) due to the broken symmetries. The 3R-like stacked spiral structures possessing similar inversion symmetry should present dramatically enhanced SHG responses, thus providing great flexibility designing miniaturized on-chip nonlinear optical devices. To achieve this, first direct synthesis of twisted 3R-stacked chiral molybdenum diselenide (MoSe2 )...
Exploring emerging two-dimensional (2D) van der Waals (vdW) semiconducting materials and precisely tuning their electronic properties at the atomic level have long been recognized as crucial issues for developing high-end optoelectronic applications. As a III-VI semiconductor, ultrathin layered hexagonal GaTe (h-GaTe) remains unexplored in terms of its intrinsic band engineering strategies. Herein, we report successful synthesis h-GaTe layers on selected graphene/SiC(0001) substrate, via...
Two new selenites, K 2 Zn 3 Se 4 O 12 (compound 1) and V 19 2), have been successfully synthesized by solid-state reactions in vacuum tubes.
Abstract Metal oxyhalides are becoming an important branch of birefringent materials due to their rich structural types and stable physicochemical properties. In this work, the electronic structure optical properties three isomers antimony oxyhalide Sb4O4F4 (I-Pna21), (II-Pnma), (III-Pnma) were investigated using first principles method. The results show that band gap I III reaches ultraviolet region (4.10 eV (I), 3.87 (III)). particular, I-III all exhibit large birefringence 0.138 - 0.266...