A5070759732- Graphene research and applications
- CCD and CMOS Imaging Sensors
- Metamaterials and Metasurfaces Applications
- 2D Materials and Applications
- Ga2O3 and related materials
- Luminescence and Fluorescent Materials
- Analytical Chemistry and Sensors
- Advanced Sensor and Energy Harvesting Materials
- Nanowire Synthesis and Applications
- Topological Materials and Phenomena
- Acoustic Wave Resonator Technologies
- Photonic and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Advanced Optical Sensing Technologies
- Photochromic and Fluorescence Chemistry
- Quantum and electron transport phenomena
- Molecular Sensors and Ion Detection
- Plasmonic and Surface Plasmon Research
- Silicon Nanostructures and Photoluminescence
- Polydiacetylene-based materials and applications
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Quantum optics and atomic interactions
- Terahertz technology and applications
- Innovative Energy Harvesting Technologies
BOE Technology Group (China)
2024
Zhejiang University
2013-2023
State Key Laboratory of Silicon Materials
2017-2023
Jilin University
2011-2019
Jilin Medical University
2019
State Key Laboratory of Superhard Materials
2019
Nanjing University of Science and Technology
2018
Kunming University of Science and Technology
2017
Abstract We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique absorption property of graphene leads to long carrier life time hot electrons that can contribute photocurrent potential carrier-multiplication. Our proposed structure boosts internal quantum efficiency over 100%, approaching upper-limit silicon-based In near-ultraviolet...
High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for wide applications. Here, photodetector based on van der Waals heterostructures graphene its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse the ultraviolet (255 nm) mid-infrared (4.3 µm) wavelengths, with three orders magnitude enhanced responsivity compared pristine photodetectors. The...
Flexible electronics are a very promising technology for various applications. Several types of flexible devices have been developed, but there has limited research on electromechanical systems (MEMS). Surface acoustic wave (SAW) not only an essential electronic device, also the building blocks sensors and MEMS. Here we report method making SAW using ZnO nanocrystals deposited cheap bendable plastic film. The exhibit two modes - Rayleigh Lamb waves with resonant frequencies 198.1 MHz 447.0...
By exploiting the adsorbent gaseous molecules induced changes in intrinsic properties of graphene/silicon (Gr/Si) Schottky junction, authors report a sensitive, low‐power consuming, multimode environmental sensor. combining an array Gr/Si diodes with differential amplifier circuit, are able to not only differentiate temperature coefficient and humidity sensing, but also monitor sun‐light exposure time. Our device is particularly sensitive toward both forward reverse biased, works resistive...
An AIE fluorescent switch exhibited multi-parameter detection properties for pH, sulfite anion and pressure with good linear relationships.
Bendable surface acoustic wave (SAW) devices were fabricated using high quality c-axis orientation ZnO films deposited on flexible polyethylene terephthalate substrates at 120 °C. Dual resonance modes, namely, the zero order pseudo asymmetric (A0) and symmetric (S0) Lamb have been obtained from SAW devices. The perform well even after repeated flexion up to 2500 με for 100 times, demonstrating its suitability electronics application. are also highly sensitive compressive tensile strains,...
We report a high-performance graphene/ultra-thin silicon metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector, which benefits from the mechanical flexibility and high-percentage visible light rejection of ultra-thin silicon. In near- mid-UV spectral region, proposed UV photodetector exhibits high photo-responsivity (0.47 A/W @ 3 V), fast time response (1 ps), specific detectivity (2.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Here, we report a broadband graphene-silicon field-effect coupled detector (FCD) sensitive to photons spanning from soft X-ray Near-Infrared region. Unlike traditional charge-coupled devices (CCD) relying on serial charge transfer between potential wells, the FCD integrates photo-sensing, integration, amplification, and random readout in one pixel. The integration well of semiconductor substrate amplification graphene transistor result highly response. In region, device displays high...
Flexible surface acoustic wave (SAW) strain sensors made on ZnO/ultrathin glass (100 μm) substrates have been developed. The sensitivity of the SAW under different angles and annealing temperatures, as well mechanical stability, are investigated. It was shown that thickness ZnO has a strong effect sensors, thicker makes with better performance. Thermal at temperature up to 200 °C also improves sensor significantly. coefficient frequency remains unchanged strains, showing good thermal...
Hot electron transistors (HETs) containing two-dimensional (2D) materials promise great potential in high-frequency analog and digital applications. Here, we experimentally demonstrate all-2D van der Waals (vdW) HETs formed by graphene, hBN, WSe2, which the polarity of carriers could be tuned changing bias conditions. We proposed a theoretical model to distinguish hot hole components ambipolar vdW HET. Importantly, both modes are achieved with pronounced saturation behavior as well...
Mechanofluorochromic properties of powder crystals and single photoacid-spiropyran (PASP) tetraphenylethene-decorated Photoacid-spiropyran (PASPTPE) under ambient pressure grinding hydrostatic compression were investigated, respectively. Both PASP PASPTPE show on/off mechanofluorochromic upon anisotropic at pressure. While isotropic high pressure, the emission intensity increased first stage then decreased, whereas decreased continuously. Single-crystal structure analysis indicate that both...
In this letter, we report the first experimental realization of purely two-dimensional-material-based hot electron transistor (2D-HET) by van der Waals stacking. We used ultra-thin graphene as base, and WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> or <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${h}$ </tex-math> </inline-formula> -BN emitter-base base-collector barriers. quantitatively...
In this letter, we investigated light-induced negative differential resistance (L-NDR) effects in a hybrid photodiode formed by graphene-silicon (GS) junction and neighboring graphene-oxide-Si (GOS) capacitor. We observed two distinct L-NDR originating from the gate-dependent surface recombination potential-well-induced confinement of photo-carriers GOS region. verified studying gate-controlled GS diode, which can distinguish photocurrent region with that (gate). A large peak-to-valley ratio...
In this work, we demonstrate the instant detection of out-of-plane avalanche multiplication in graphene-oxide-semiconductor structure via strong field-effect coupling graphene channel with silicon photo gate. This situ can eliminate carriers' preamplification losses traditional charge-coupled devices (CCDs). By relying upon electrostatic coupling, a real-time signature space charge region be observed by both displacement and currents device. allows us to alternatively probe capability under...
Visible mechanochromism was triggered <italic>via</italic> the ring-opening reaction of phenolphthalein under high pressure. Different threshold pressures and responsive colors were achieved by changing substituent groups with different electronic effects.
Due to limited short-wavelength infrared (SWIR) (1.1-2.5 μm) response of silicon (Si), germanium and indium-gallium-arsenide based photodetectors have dominated the commercial market SWIR for decades. However, they are often constrained by high-temperature processing, spectral range, flexible incompatibility, cryogenic cooling accessories. Therefore, it is important develop that can be directly integrated with complementary-metal-oxide-semiconductor devices. In this work, we demonstrate a...
Two-dimensional silicon carbide (2d-SiC) is a viable material for next generation electronics due to its moderate, direct bandgap with huge potential. In particular, potential p–n junctions yet be explored. this paper, three types of 2d-SiC-based different doping configuration are modeled. The configurations refer partially replacing carbon boron or nitrogen atoms along the zigzag armchair direction, respectively. By employing density functional theory, we calculate transport properties SiC...
Charge-coupled devices (CCD) allow imaging by photodetection, charge integration, and serial transfer of the stored packets from multiple pixels to readout node. The functionality CCD can be extended non-destructive in-situ integrated charges replacing metallic electrodes with graphene in metal-oxide-semiconductors (MOS) structure a pixel. electrostatic capacitive coupling substrate allows Fermi level tuning that reflects density depletion well. This work demonstrates monitoring interpixel...
Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy strong electrostatic H2O-based ALD precursors, indicating their potential as seed layer for growth on graphene. In graphene-SFG...
Traditional electron-multiplying charge-coupled devices suffer from slow readout and large power consumption because of the complex driving circuitry implemented for square clocking to serially transfer charge during process. At same time, photo-generated carriers are also prone pre-amplification losses. Owing electrostatic capacitive coupling tunable graphene channel with silicon photogate, an in-situ transient photoresponse study single graphene-oxide-silicon heterostructure driven into...
The bending radius of the flexible OLED down border was reduced to 0.15mm from 0.25mm by an improved model for extremely narrow bezel mobile. stability optimized demonstrated simulation, and preliminary production environmental reliability were assessed too.