A5020867211- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Metal and Thin Film Mechanics
- Optical Coatings and Gratings
- Surface and Thin Film Phenomena
- Theoretical and Computational Physics
- Electron and X-Ray Spectroscopy Techniques
- nanoparticles nucleation surface interactions
- 2D Materials and Applications
- Graphene research and applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Ion-surface interactions and analysis
- Advanced Chemical Physics Studies
- ZnO doping and properties
- Nanofabrication and Lithography Techniques
- Semiconductor materials and interfaces
- Photonic Crystals and Applications
- Molecular Junctions and Nanostructures
- Force Microscopy Techniques and Applications
- Photonic and Optical Devices
- Advancements in Battery Materials
- Fluid Dynamics and Thin Films
- Advanced Surface Polishing Techniques
Rensselaer Polytechnic Institute
2015-2025
Shanghai Dianji University
2025
Institute of Coal Chemistry
2025
University of Chinese Academy of Sciences
2025
Albany State University
1996-2020
University at Albany, State University of New York
1996-2020
Institute of Applied Astronomy
2014
Troy University
2014
Astronomy and Space
2009-2013
Integrated Optoelectronics (Norway)
2006
It is well established that defects strongly influence properties in two-dimensional materials. For graphene, atomic activate the Raman-active centrosymmetric A1g ring-breathing mode known as D-peak. The relative intensity of this D-peak compared to G-band peak most widely accepted measure quality graphene films. However, no such metric exists for monolayer semiconducting transition metal dichalcogenides WS2 or MoS2. Here we intentionally create atomic-scale hexagonal lattice pristine and...
Two-dimensional sheets of transition metal dichalcogenides are an emerging class atomically thin semiconductors that considered to be "air-stable", similar graphene. Here we report that, contrary current understanding, chemical vapor deposited dichalcogenide monolayers exhibit poor long-term stability in air. After room-temperature exposure the environment for several months, molybdenum disulfide and tungsten undergo dramatic aging effects including extensive cracking, changes morphology,...
Rechargeable lithium ion batteries are integral to today's information-rich, mobile society. Currently they one of the most popular types battery used in portable electronics because their high energy density and flexible design. Despite increasing use at present time, there is great continued commercial interest developing new improved electrode materials for that would lead dramatically higher capacity longer cycle life. Silicon promising anode it has highest known theoretical charge...
Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the stable and preserves monolayer's nature, along with other attractive characteristics, including direct-bandgap photoluminescence.
Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control material with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, crystal potential are strongly coupled. Here we report the synthesis a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable chiral....
We report optical rectification and subsequent generation of subpicosecond submillimeter-wave radiation from a nonlinear organic crystalline salt. With excitation at wavelength 820 nm 150 fs pulse duration, the magnitude rectified field salt dimethyl amino 4-N-methylstilbazolium tosylate is one two orders larger than that GaAs LiTaO3 crystals, respectively. This crystal presently provides most intense terahertz radiated among all natural nonexternally biased materials we know.
In this letter, we report a method to fabricate nano-column arrays with different shapes and in-plane orientations by glancing angle deposition. By changing the rate of rotation during each revolution, can nano-columns circular, elliptical, triangle, rectangular, pentagon shapes. Depending on nucleation sites, even flowerlike nano-columns. This has potential application produce 3-D lattice.
Effects of surface roughness on electrical properties a thin insulating film capacitor with one smooth electrode plate and rough are investigated. The is described in terms self-affine fractal scaling through the exponent \ensuremath{\alpha}, root-mean square (rms) amplitude w, correlation length \ensuremath{\xi}. electric field, capacitance, leakage current show similar qualitative changes parameters: they all increase as w increases, also either \ensuremath{\xi} or \ensuremath{\alpha} decreases.
Three-dimensional nanostructures can be fabricated by the glancing angle deposition technique. By rotating substrate in both polar and azimuthal directions, one fabricate desired nanostructures, such as nano-rod arrays with different shapes, nano-spring arrays, even multilayer nanostructures. This method offers a fully three-dimensional control of nanostructure additional capability self-alignment. There is almost no limitation on materials that into In this presentation, we will discuss...
One-dimensional nanoscale epitaxial arrays serve as a great model in studying fundamental physics and for emerging applications. With an increasing focus laid on the Cs-based inorganic halide perovskite out of its outstanding material stability, we have applied vapor phase epitaxy to grow well aligned horizontal CsPbX3 (X: Cl, Br, or I their mixed) nanowire large scale mica substrate. The as-grown features triangular prism morphology with typical length ranging from few tens micrometers...
Silicon (Si) shows promise as an anode material in lithium-ion batteries due to its very high specific capacity. However, Si is highly brittle, and effort prevent from fracturing, the research community has migrated use of films nanoparticle based electrodes. such a strategy significantly reduces volumetric energy density porosity Here we show that contrary conventional wisdom, can be stabilized by two strategies: (a) anchoring carbon nanotube macrofilm (CNM) current collector (b) draping...
Abstract Crystallographic dislocation has been well-known to be one of the major causes responsible for unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite exhibited promising applications optoelectronic However, how impacts its ‘defects-tolerant’ halide is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial controlled density. First-principle calculations and molecular-dynamics...
High-temperature vapor phase epitaxy (VPE) has been proved ubiquitously powerful in enabling high-performance electro-optic devices III-V semiconductor field. A typical example is the successful growth of p-type GaN by VPE for blue light-emitting diodes. excels as it controls film defects such point/interface and grain boundary, thanks to its high-temperature processing condition controllable deposition rate. For first time, single-crystalline halide perovskite thin demonstrated-a unique...
Low-energy electron diffraction has been used to study the dynamics of formation oxygen $p(2\ifmmode\times\else\texttimes\fi{}1)$ superlattice structure on a W(112) surface at half-monolayer coverage. The ground state is twofold degenerate and nonconserved long-range order associated with this was found grow linearly time in earlier stages. This behavior interpreted use domain-growth theory proposed by Lifshitz Allen Cahn. temperature dependence growth rate obeyed an Arrhenius law for...
Lithium-ion batteries show poor performance for high power applications involving ultrafast charging/discharging rates. Here we report a functionally strain-graded carbon-aluminum-silicon anode architecture that overcomes this drawback. It consists of an array nanostructures each comprising amorphous carbon nanorod with intermediate layer aluminum is finally capped by silicon nanoscoop on the very top. The gradation in strain arises from graded levels volumetric expansion these three...
The thermal disordering of oxygen chemisorbed on W(110) has been investigated as a function coverage below half-monolayer by measuring the angular distribution intensity in LEED superlattice reflections temperature. transition temperature is coverage, being much lower at low coverage. A partial phase diagram constructed for this overlayer, and low- high-coverage limits are interpreted, respectively, terms an island–dissolution order–disorder transition.
We demonstrate a novel chemical-free water-based technique to synthesize various forms of cuprous oxide nanostructures at room temperature. The self-assemblies these are formed by the anodic oxidation Cu in deionized (DI) water. Direct growth on SiO(2)/Si (100) substrate has been successfully achieved tuning bias voltage and duration. A variety from one-dimensional nanowires different complex two- three-dimensional structures grown this method. show that morphological evolution self-assembly...