Yimo Han

ORCID: 0000-0003-0563-4611
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About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • Advanced Electron Microscopy Techniques and Applications
  • Graphene research and applications
  • Electron and X-Ray Spectroscopy Techniques
  • MXene and MAX Phase Materials
  • Advanced X-ray Imaging Techniques
  • Advancements in Battery Materials
  • Electronic and Structural Properties of Oxides
  • Perovskite Materials and Applications
  • Quantum Dots Synthesis And Properties
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Extraction and Separation Processes
  • Advanced Battery Materials and Technologies
  • Ga2O3 and related materials
  • Recycling and Waste Management Techniques
  • Nanowire Synthesis and Applications
  • Machine Learning in Materials Science
  • Ferroelectric and Piezoelectric Materials
  • Advanced Photocatalysis Techniques
  • Topological Materials and Phenomena
  • Force Microscopy Techniques and Applications
  • Lipid metabolism and biosynthesis
  • Supercapacitor Materials and Fabrication

Rice University
2020-2025

Intel (United States)
2024

Cornell University
2015-2021

Princeton University
2019-2020

Gorgias Press (United States)
2020

Centre National de la Recherche Scientifique
2019

U.S. Army Combat Capabilities Development Command Chemical Biological Center
2019

Dominion (United States)
2019

Université de Reims Champagne-Ardenne
2019

Old Dominion University
2019

Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down memory devices. However, depolarizing electrostatic fields interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report experimental discovery locking between out-of-plane dipoles in-plane lattice asymmetry atomically thin In_{2}Se_{3} crystals, stabilization mechanism leading to our...

10.1103/physrevlett.120.227601 article EN publisher-specific-oa Physical Review Letters 2018-05-31

Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state family that exhibit novel physics phenomena can power high performance electronic and photonic applications. Here, we present the first demonstration an important building block in vdW solids: room temperature (RT) Esaki tunnel diodes. The diodes were realized heterostructures made black phosphorus (BP) tin diselenide (SnSe2), two semiconductors possess broken-gap energy band...

10.1021/acs.nanolett.5b01792 article EN Nano Letters 2015-07-30

Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers-despite large lattice mismatches-are repeated laterally integrated without dislocations within monolayer plane. Grown by an omnidirectional epitaxy, these display fully matched constants across heterointerfaces while maintaining isotropic structure triangular symmetry. This strong epitaxial strain is precisely...

10.1126/science.aao5360 article EN Science 2018-03-08

Exfoliation of large-area monolayers is important for fundamental research and technological implementation transition-metal dichalcogenides. Various techniques have been explored to increase the exfoliation yield, but little known about underlying mechanism at atomic level. Here, we demonstrate gold-assisted mechanical monolayer molybdenum disulfide, up a centimeter scale. Detailed spectroscopic, microscopic, first-principles density functional theory analyses reveal that strong van der...

10.1021/acsnano.8b06101 article EN cc-by ACS Nano 2018-09-28

With the decrease of dimensions electronic devices, role played by electrical contacts is ever increasing, eventually coming to dominate overall device volume and total resistance. This especially problematic for monolayers semiconducting transition-metal dichalcogenides (TMDs), which are promising candidates atomically thin electronics. Ideal them would require use similarly electrode materials while maintaining low contact resistances. Here we report a scalable method fabricate ohmic...

10.1021/acsnano.6b02879 article EN ACS Nano 2016-06-14

Origami-inspired fabrication presents an attractive platform for miniaturizing machines: thinner layers of folding material lead to smaller devices, provided that key functional aspects, such as conductivity, stiffness, and flexibility, are persevered. Here, we show origami at its ultimate limit by using 2D atomic membranes a material. As prototype, bond graphene sheets nanometer-thick glass make ultrathin bimorph actuators bend micrometer radii curvature in response small strain...

10.1073/pnas.1712889115 article EN Proceedings of the National Academy of Sciences 2018-01-02

Cryogenic electron microscopy (cryo-EM) has become one of the most powerful techniques to reveal atomic structures and working mechanisms biological macromolecules. New designs cryo-EM grids-aimed at preserving thin, uniform vitrified ice improving protein adsorption-have been considered a promising approach achieving higher resolution with minimal amount materials data. Here, we describe method for preparing graphene grids up 99% monolayer coverage that allows more than 70% grid squares...

10.1073/pnas.1919114117 article EN Proceedings of the National Academy of Sciences 2019-12-26

Two-dimensional hexagonal boron nitride (h-BN) is a wide bandgap material which has promising mechanical and optical properties. Here we report the realization of an initial nucleation density h-BN <1 per mm2 using low-pressure chemical vapor deposition (CVD) on polycrystalline copper. This enabled wafer-scale CVD growth single-crystal monolayer with lateral size up to ∼300 μm, bilayer ∼60 trilayer ∼35 μm. Based large domain, sizes as-grown bi- grains are 2 orders magnitude larger than...

10.1021/acsnano.7b04841 article EN ACS Nano 2017-11-03

Abstract Both high resolution and precision are required to quantitatively determine the atomic structure of complex nanostructured materials. However, for conventional imaging methods in scanning transmission electron microscopy (STEM), with picometer cannot usually be achieved weakly-scattering samples or radiation-sensitive materials, such as 2D Here, we demonstrate low-dose, sub-angstrom using mixed-state ptychography. We show that correctly accounting partial coherence beam is a...

10.1038/s41467-020-16688-6 article EN cc-by Nature Communications 2020-06-12

Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads unavoidable strain, dislocations, or ripples, which can strongly affect their mechanical, optical, and electronic properties. We have developed an approach map heterojunction strain profiles with sub-picometer precision identify dislocations out-of-plane ripples. collected...

10.1021/acs.nanolett.8b00952 article EN Nano Letters 2018-05-18

Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral can be constructed between metallic semiconducting transition metal disulfide (TMD) layers. Instead edge epitaxy, polycrystalline monolayer MoS2 in such junctions was revealed to nucleate from vertices multilayered VS2 crystals, creating one-dimensional ultralow contact...

10.1021/jacs.8b07806 article EN Journal of the American Chemical Society 2018-09-20

The staggering accumulation of end-of-life lithium-ion batteries (LIBs) and the growing scarcity battery metal sources have triggered an urgent call for effective recycling strategy. However, it is challenging to reclaim these metals with both high efficiency low environmental footprint. We use here a pulsed dc flash Joule heating (FJH) strategy that heats black mass, combined anode cathode, >2100 kelvin within seconds, leading ~1000-fold increase in subsequent leaching kinetics. There are...

10.1126/sciadv.adh5131 article EN cc-by-nc Science Advances 2023-09-27

Abstract Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record‐high thermoelectric figure of merit (ZT), purely in‐plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties related applications, a crucial step to develop controllable routes synthesize large‐area, ultrathin, high‐quality SnSe crystals. Physical vapor deposition (PVD) constitutes reliable method SnSe, however, effects various growth...

10.1002/aelm.202201031 article EN cc-by Advanced Electronic Materials 2023-02-14
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