Satoshi Shinada

ORCID: 0000-0003-0576-060X
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About
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Research Areas
  • Photonic and Optical Devices
  • Optical Network Technologies
  • Advanced Photonic Communication Systems
  • Semiconductor Lasers and Optical Devices
  • Advanced Optical Network Technologies
  • Advanced Fiber Laser Technologies
  • Semiconductor Quantum Structures and Devices
  • Photorefractive and Nonlinear Optics
  • Near-Field Optical Microscopy
  • Advanced Fiber Optic Sensors
  • Optical Coatings and Gratings
  • graph theory and CDMA systems
  • Neural Networks and Reservoir Computing
  • Quantum Dots Synthesis And Properties
  • Physics of Superconductivity and Magnetism
  • Microwave Engineering and Waveguides
  • Quantum and electron transport phenomena
  • Integrated Circuits and Semiconductor Failure Analysis
  • Acoustic Wave Resonator Technologies
  • Optical Wireless Communication Technologies
  • Molecular Junctions and Nanostructures
  • Software-Defined Networks and 5G
  • Plasmonic and Surface Plasmon Research
  • Advanced Optical Imaging Technologies
  • PAPR reduction in OFDM

National Institute of Information and Communications Technology
2015-2024

Institute of Electrical and Electronics Engineers
2023

Chulalongkorn University
2021

Gorgias Press (United States)
2020

National Center for University Entrance Examinations
2018

University of Aveiro
2013

National Institute of Science Communication and Information Resources
2007

Nippon Koei (Japan)
2005

Tokyo Institute of Technology
1999-2004

This paper describes optical frequency comb generation using single-sideband modulation technique. We can obtain shift the singnal-sideband modulator consisting of four phase modulators, where is precisely equal to that an rf-signal fed modulator. A series spectral components be generated by fiber loop having

10.1587/elex.1.217 article EN IEICE Electronics Express 2004-01-01

We described a novel optical label swapping (OLS) technique for packet systems using frequency-shift-keying (FSK) labeling. High-speed FSK signal can be generated by an external modulator consisting of four phase modulators. The was based on single-sideband (SSB) modulation technique, and comprised traveling-wave electrodes high-speed frequency switching. demonstrate 10 Gbps transmission, simultaneous intensity (IM). OLS double-sideband also demonstrated, where this used bundled...

10.1109/jlt.2004.840353 article EN Journal of Lightwave Technology 2005-01-01

We report, for the first time, tunable all-optical wavelength conversion of 160-Gb/s return-to-zero (RZ) optical signals based on cascaded sum- and difference-frequency generation in a periodically poled LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> waveguide. The distorted due to limited phase-matching bandwidth during were compensated by spectral reshaping. achieved error-free with bit-error rate less than 10 <sup...

10.1109/lpt.2007.891951 article EN IEEE Photonics Technology Letters 2007-03-01

We propose a high extinction-ratio (ER) Mach-Zehnder modulator (MZM) with an active Y-branch optical intensity trimmer. In addition, we investigate ER integrated MZM for single-sideband (SSB) signal generation, where the trimmers are embedded in dual-parallel MZM. Optical SSB generation suppression ratio of main carrier (47 dB) and undesired sidebands (>42 is achieved by optimizing amplitude imbalances corresponding to ER.

10.1109/lpt.2010.2047854 article EN IEEE Photonics Technology Letters 2010-04-16

We developed novel integrated optical packet and circuit switch-node equipment. Compared with our previous equipment, a polarization-independent 4 × semiconductor amplifier switch subsystem, gain-controlled amplifiers, one 100 Gbps transponder seven 10 path transponders Gigabit Ethernet (10GbE) client-interfaces were newly installed in the present system. The amplifiers can provide more stable operation without equipment adjustments for frequent polarization-rotations dynamic packet-rate...

10.1364/oe.19.00b242 article EN cc-by Optics Express 2011-11-18

We proposed a microaperture vertical-cavity surface-emitting laser (VCSEL) with metal grating for the enhancement of optical near-field induced by surface plasmon resonance. carried out two-dimensional modeling on intensity at surrounded in silver film. An increase throughput through was obtained control mode, which is strongly dependent some structural parameters grating, such as period and depth so on. also fabricated VCSEL concentric circular exhibiting large peak intensity. The eight...

10.1063/1.1597979 article EN Applied Physics Letters 2003-08-01

We investigate the phase squeezing characteristics of non-degenerate phase-sensitive-amplifiers (PSAs) based on periodically-poled-lithium-niobate (PPLN) waveguides. implement two PSA configurations with insensitive idler generation performed in both highly-non-linear-fiber (HNLF) and PPLN In cases we demonstrate regeneration a noisy BPSK signal, despite net signal attenuation sensitive PPLN, show that level varies dynamic range (PSDR). observe weak limits achievable PSDR use HNLF for leads...

10.1364/oe.19.00b131 article EN cc-by Optics Express 2011-11-17

This work demonstrates the use of spatial division multiplexing (SDM) to implement spine-leaf datacenter network topologies. We consider two possible scenarios, with first consisting direct high-capacity multicore fiber interconnects. was implemented an 8-core support 64×200Gb/s SDM wavelength (WDM) lanes and combined throughput 12.8 Tb/s. also demonstrate a scenario in which each interconnect is used establish multiple connections between pairs spin-leaf switches. An optical circuit switch...

10.1364/jocn.483075 article EN Journal of Optical Communications and Networking 2023-02-03

We newly developed a 3 × integrated optical packet and circuit switch-node. Optical buffers burst-mode erbium-doped fiber amplifiers with the gain flatness are installed in The buffer can prevent collisions decrease loss. constructed multi-ring network testbed connecting two single-ring networks client by For first time, we demonstrated 244 km transmission 5-node hopping of multiplexed 14-wavelength 10 Gbps paths 100 packets encapsulating Gigabit Ethernet frames on testbed. Error-free (frame...

10.1364/oe.20.028764 article EN cc-by Optics Express 2012-12-12

We experimentally investigate the performance of burst-mode EDFA in an optical packet and circuit integrated system. In such networks, packets light paths can be dynamically assigned to same fibers, resulting gain transients EDFAs throughout network that limit performance. Here, we compare a 'burst-mode' (BM-EDFA), employing transient suppression techniques feedback, with conventional EDFAs, those using automatic control previous BM-EDFA implementations. first measure other impairments...

10.1364/oe.21.032589 article EN cc-by Optics Express 2013-12-23

We introduce a flexible, software-defined real-time multi-modulation format receiver implemented on an off-the-shelf general-purpose graphics processing unit (GPU). The flexible is able to process 2 GBaud 2-, 4-, 8-, and 16-ary pulse-amplitude modulation (PAM) signals as well 1 16- 64-ary quadrature amplitude (QAM) signals, with the latter detected using Kramers-Kronig (KK) coherent receiver. Experimental performance evaluation shown for back-to-back. In addition, by JGN high speed R&D...

10.1109/jlt.2021.3050304 article EN cc-by Journal of Lightwave Technology 2021-01-09

An optical frequency-shift-keying (FSK) modulator with a pair of Mach-Zehnder structures that can switch frequency is developed. The operation demonstrated at 10 Gbit/s FSK transmission conducted on standard singlemode fibre 60 km, where the signal demodulated by Bragg grating.

10.1049/el:20040444 article EN Electronics Letters 2004-05-25

We demonstrate 2.56 Tbit/s/port dual-polarization DWDM/DQPSK variable-length optical packet (20 Gbit/s × 64 wavelengths 2 polarizations) switching and buffering by using a 2×2 switch (OPS) system. The data plane of the OPS system was constructed multi-connected electro-optical switches fiber delay lines. accumulated polarization dependent loss each path in less than 5 dB. This low-polarization-dependence enabled us to handle packets (1.28 Tbit/s/port) with time-varying after transmission...

10.1364/oe.19.00b406 article EN cc-by Optics Express 2011-11-21

Optical wavelength conversion (OWC) is expected to be a desirable function in future optical transparent networks. Since high-order quadrature amplitude modulation (QAM) more sensitive the phase noise, OWC of QAM signals, it crucial suppress extra noise introduced subsystem, especially for scenario with multiple cascaded OWCs. Here, we propose and experimentally demonstrate pump-linewidth-tolerant scheme suitable signals using coherent two-tone pumps. Using 3.5-MHz-linewidth distributed...

10.1364/oe.22.005067 article EN cc-by Optics Express 2014-02-25

We experimentally demonstrated ultra-fast phase-transparent wavelength conversion using cascaded sum- and difference-frequency generation (cSFG-DFG) in linear-chirped periodically poled lithium niobate (PPLN). Error-free of a 160-Gb/s return-to-zero differential phase-shift keying (RZ-DPSK) signal was successfully achieved. Thanks to the enhanced bandwidth PPLN with periods, no optical equalizer required compensate spectrum distortion after conversion, unlike previous demonstration RZ on-off...

10.1364/oe.18.006064 article EN cc-by Optics Express 2010-03-11

We investigate phase-sensitive operation at telecommunication wavelengths in periodically-poled lithium-niobate waveguides, measuring a record phase-dependent dynamic range of 14.5 dB with 5-dB gain, compared to phase-insensitive operation. also highlight limitations arising high pump powers from green light emission and thermal instability which limits performance an ideal theoretical model.

10.1109/lpt.2011.2106489 article EN IEEE Photonics Technology Letters 2011-01-17

In this Letter, we report a 1060-nm vertical-cavity surface-emitting laser with intra-cavity surface relief engineering that provides transverse-resonance in transverse-coupled cavities, enabling single-mode operation and bandwidth enhancement at the same time. A power of over 2.5 mW 3-dB modulation from 15 to 23 GHz was demonstrated an oxide aperture diameter as large 6 μm. We obtained non-return-to-zero signals up 58 Gbps eye-opening through 5-km long standard fiber (G652). The is enhanced...

10.1063/5.0094262 article EN Applied Physics Letters 2022-06-27

We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, optical anisotropy photoluminescence (PL) intensity was increased. The 50% obtained at 1.15 /spl mu/m emission wavelength. demonstrated edge-emitting lasers and VCSELs emitting 1.1 first time. 1.15-/spl showed characteristic temperature 210 K threshold...

10.1109/2944.954136 article EN IEEE Journal of Selected Topics in Quantum Electronics 2001-01-01

We have proposed a microaperture vertical cavity surface-emitting laser (VCSEL) for use in near-field optical data storage. carried out the analysis of VCSEL using two-dimensional (2-D) finite element method. calculated distribution generated near microaperture, and showed that spot size is potentially smaller than 100 nm, which less wavelength by factor 8. fabricated loaded an Au film on top surface blocking emitting light formed subwavelength-size aperture focused ion beam (FIB) etch...

10.1109/2944.954151 article EN IEEE Journal of Selected Topics in Quantum Electronics 2001-01-01

Network architectural changes to satisfy all the 5G+ mobile network specifications and requirements are necessary due popularization of streaming cloud applications on omnipresent portable devices. The combination massive installation micro-cell antenna sites with access radio (C-RAN) architecture has recently been nominated as a promising technology for high-capacity fronthaul links, albeit at high cost. An alternative approach next-generation networks is utilize already deployed passive...

10.1109/jlt.2020.3028492 article EN Journal of Lightwave Technology 2020-10-02

A high-power single-mode vertical cavity surface emitting laser (VCSEL) based on a slow light mode (SLM) concept is demonstrated. Shallow gratings were implemented to select single in mm long oxide aperture VCSELs. The structure and well-established fabrication processes are unchanged from those of conventional 850 nm An electron-beam lithography used form 1st-order shallow grating the surface. Thanks low effective index intensity penetration SLM surface, process much easier than guided...

10.1063/5.0066590 article EN Applied Physics Letters 2021-11-08

We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al(Ga)As multi-oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single transverse mode operation. have fabricated an InGaAs-GaAs VCSEL proposed MOX formed on GaAs (311)B substrate. performed numerical simulation to investigate single-mode behavior and showed possibility VCSEL's large active area. 11-μm current 960-nm wavelength this structure. The threshold voltage were 1.0 mA 2.0 V,...

10.1109/68.849058 article EN IEEE Photonics Technology Letters 2000-06-01

A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates patterned Au film. After organic contaminants on surfaces were removed using argon radiofrequency plasma, Au-to-Au was carried out in ambient air. Strong at significantly low temperatures below 100◦C without generating cracks demonstrated. key words: low-temperature bonding, niobate/silicon structure, integration

10.1093/ietele/e90-c.1.145 article EN IEICE Transactions on Electronics 2007-01-01

Tunable wavelength conversion of a 160 Gbit/s signal by means cascaded sum frequency generation/difference generation was performed on periodically-poled lithium niobate waveguide. Operation at room temperature (25°C) is demonstrated. A maximum power penalty 2.1 dB for bit error rate 10−9 achieved over range 29 nm.

10.1049/el.2009.2383 article EN Electronics Letters 2009-10-22
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