A5021930637- Radiation Detection and Scintillator Technologies
- Particle Detector Development and Performance
- Advanced Semiconductor Detectors and Materials
- Silicon Carbide Semiconductor Technologies
- Radiation Effects in Electronics
- Nuclear Physics and Applications
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Advanced X-ray and CT Imaging
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Medical Imaging Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- CCD and CMOS Imaging Sensors
- Digital Radiography and Breast Imaging
- Ion-surface interactions and analysis
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Electrostatic Discharge in Electronics
- Radiation Therapy and Dosimetry
- Advanced Energy Technologies and Civil Engineering Innovations
- Advanced X-ray Imaging Techniques
Institute of Electrical Engineering of the Slovak Academy of Sciences
2016-2025
Slovak Academy of Sciences
2015-2024
Slovak University of Technology in Bratislava
2023
National Research Nuclear University MEPhI
2022
Institute of Chemistry of the Slovak Academy of Sciences
2020-2022
Abstract The spectrometric properties of a semiconductor detector depend on both, the base material quality and electric collection field distribution. In case single pad semi-insulating (SI) bulk GaAs detectors with circular electrode collecting charge generated by radiation is affected area, thickness applied bias. Thinner smaller under higher bias obtain better such as efficiency (CCE) energy resolution (FWHM) due to more intense fewer volume defects. However, SI substrate fabrication...
We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of alpha particles. A thin blocking contact Ni/Au (15 nm) was used to minimize the influence on particles energy. Current-voltage characteristics were measured low current density below 0.3 nAcm−2 observed at room temperature. 239Pu241Am244Cm source within energy range between 5.1 MeV 5.8 for testing. The charge collection efficiency close 100 % reverse bias exceeding 50 V determined. best performance shows...
Abstract Timepix3 is a hybrid pixel radiation detector, from the CERN-designed Timepix family, which contains 65.536 pixels. The detectors based on read-out chips have started to be used in wide range of applications, such as medicine, particle physics, neutron detection and space applications. For applications harsh environments space, therapy nuclear power engineering, silicon carbide (SiC) stands suitable semiconductor sensor thanks its chemical stability, temperature operation enhanced...
In this work we have focused on detection of thermal neutrons generated by 239Pu–Be isotopic neutron source. A high quality liquid phase epitaxial layer 4H-SiC was used as a region. The thickness the 70 μ m and diameter circular Au/Ni Schottky contact 4.5 mm. Around two guard rings were created. detector structure first examined protons alpha particles for energy calibration. Monoenergetic energies from 300 keV up to 1.9 MeV calibration good linearity observed. resolution 35 obtained...
In this work, the radiation detector structures based on polycrystalline diamond film have been studied. Polycrystalline chemical vapor deposited silicon substrate has a thickness of about 3 µm. The Ti/Au double layer was used to prepare circular electrical contacts 1 mm in diameter top layer. back side covered by full area contact. current-voltage characteristics prepared samples both directions were measured at room temperature up 50 V with flowing current below 0.1 nA. then connected...
High purity epitaxial 4H-SiC became a serious candidate for the fabrication of spectrometric radiation detectors with high resistance to neutrons and gamma rays damage suitable applications in hot plasma diagnostics. The present work reports on i) characterization grown by liquid phase epitaxy SiC substrates ii) performances metal/4H-SiC fabricated same material. X-ray diffraction topography as well I-V, C-V DLTS measurements are used evaluation material properties device characteristics. UV...
Abstract In this work, Schottky detectors based on a high-quality 4H-SiC epitaxial layer with thickness of 50 µm were prepared. The contact Ni/Au metallization 3 mm diameter was made. Reverse current-voltage characteristics measured up to voltage 300 V leakage current 40 pA at room temperature. Using an α-particle radiation source, the spectrometric detector tested. best energy resolution in FWHM (Full Width and Half Maximum) about 15 keV for 5.5 MeV α-particles observed. Furthermore, pixel...
Semi-insulating (SI) GaAs detectors were irradiated by 5 MeV electrons up to a dose of 69 kGy, in order test their radiation hardness. The electric and spectrometric stability was examined as function the absorbed dose. Investigated showed very good detector resistance within 40 kGy followed deterioration some properties. However, reverse current charge collection efficiency minimum changes with overall applied doses. obtained results will be used preliminary study for further...
This work focused on a Timepix chip [1] coupled with bulk semi-insulating GaAs sensor. The sensor consisted of matrix 256 × pixels pitch 55 μm bump-bonded to ASIC. was processed 350 μm-thick SI wafer. We carried out detector adjustment optimize its performance. included threshold equalization setting up parameters the chip, such as Ikrum, Pream, Vfbk, and so on. energy calibration realized using 241Am radioisotope in two modes: time-over-threshold scan. An resolution 4.4 keV FWHM (Full Width...
We have examined semi-insulating (SI) GaAs detectors with high density polyethylene (HDPE) conversion layer by a mono-energetic neutrons kinetic energy of 16.755 MeV generated deuterium—tritium nuclear reaction. First, the influence HDPE thickness on relative detection efficiency fast was studied. The MCNPX (Monte Carlo N-particle eXtended) code has been used to support analysis experiment. theoretical optimum determined 1.9 mm using code. layers various thicknesses, in range from 50 μ m...
Abstract The hybrid architecture of the Timepix (TPX) family detectors enables use different semiconductor sensors, most commonly silicon (Si), as well high-density materials such Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs). For this purpose, we explore potential a carbide (SiC) sensor bump-bonded on Timepix3 detector radiation imaging and particle tracking detector. SiC stands radiation-hard material also with ability to operate at elevated temperatures up several hundreds degrees...
The 4H polytype silicon carbide is a promising material for radiation-resistant sensors of ionizing particles. wide band gap 3.26 eV offers operation at increased temperatures up to several hundred degrees Celsius. In this work we focused on the analysis active region thickness detectors based 4H-SiC. investigated are fabricated from 105 μm epitaxial layer grown 350 4H-SiC substrate. circular Schottky contacts with diameter 1.4 mm using an Au/Ni double were evaporated onto both sides...
A radiation hardness study of developed Schottky barrier semi-insulating (SI) GaAs detectors against 5 MeV electrons is described in this paper. The influence cumulative dose (up to 1000 kGy) and the applied rate (20, 40 or 80 kGy/h) on spectrometric electrical properties presented. were evaluated from measured 241Am gamma spectra obtained measuring current-voltage characteristics. has negatively affected all properties. detector CCE (Charge Collection Efficiency) exponentially decreased...