A5075006750- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- High-pressure geophysics and materials
- Metal and Thin Film Mechanics
- Quantum and electron transport phenomena
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- Force Microscopy Techniques and Applications
- Advanced Thermodynamics and Statistical Mechanics
- Physics of Superconductivity and Magnetism
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- ZnO doping and properties
- Quantum Mechanics and Applications
- Ga2O3 and related materials
- Surface and Thin Film Phenomena
- Electrochemical Analysis and Applications
- Material Dynamics and Properties
- Copper-based nanomaterials and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
- Silicon Carbide Semiconductor Technologies
- Molecular Junctions and Nanostructures
Czech Academy of Sciences, Institute of Physics
2016-2025
Czech Academy of Sciences
2016-2025
IMEC
2009
CEA LIST
2008
Although heavily phosphorus-doped diamond (PDD) holds great potential for advanced device applications, incorporating phosphorus into remains challenging with conventional growth methods. In this study, optical emission spectroscopy (OES) was used to correlate the intensity ratio of PH CH radicals (IPH/ICH) concentration ([P]) in layers synthesized under varying phosphine ([PH3]/[H2]) and methane ([CH4]/[H2]) concentrations using microwave plasma-enhanced chemical vapor deposition. OES...
We propose a label-free biosensor concept based on the charge state manipulation of nitrogen-vacancy (NV) quantum color centers in diamond, combined with an electrochemical microfluidic flow cell sensor, constructed boron-doped diamond. This device can be set at defined potential, locking onto particular chemical reaction, whilst NV center provides sensing function. The occupation is initially prepared by applying bias voltage gate electrode and then subsequently altered exposure to detected...
Electrical transport properties of thin boron doped nanocrystalline diamond films with thicknesses 60–500nm have been studied. The Raman spectra measured exhibit Fano resonances, characteristic for B concentrations close to the metal-to-insulator transition. Upon increasing concentration, sp2 carbon related resonances vanish. In such boron-doped films, a positive magnetoresistance could be observed at liquid helium temperatures. show conductivity similar that B-doped epitaxial without any...
The microstructure and physical properties of reflective black aluminum were compared for layers different thicknesses deposited by magnetron sputtering on fused silica substrates.
Due to its high sensitivity corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, development low-cost materials resistant corrosion under oxidizing conditions is an important goal toward a suitable protection otherwise unstable semiconductors used PEC cells. Here, we report on protective coating based thin and electrically conductive nanocrystalline boron-doped diamond (BDD)...
In this work, first, we investigate the effect of nitrogen addition in microwave plasma enhanced chemical vapor deposition on growth thick {113} epitaxial diamond layers. We identify a narrow range concentrations for crack-free layers with smooth surface morphology. Without nitrogen, cracks start to appear after layer thickness 7–10 μm due elastic energy stored layer, but stabilizes growth. also use low power density conditions produce boron-doped observe very high boron incorporation...
We investigate the formation and characteristics of vacancy clusters in Gallium Nitride (GaN) grown by Metal-Organic Chemical Vapor Deposition (MOCVD). The research identifies vacancy-type defects, particularly VGa-ON-Hi complexes, using positron annihilation spectroscopy, as-grown sample which are transformed into during low-energy electron beam irradiation. study employs photoluminescence (PL) cathodoluminescence (CL) spectroscopy to analyze luminescence properties, demonstrating that...
The study explores the optical and transport properties of polycrystalline ZnO thin films prepared using reactive pulsed mid-frequency sputtering with RF electron cyclotron wave resonance (ECWR) plasma. This deposition method increases ionization degree sputtered particles, dissociation gas plasma density magnetron Optical absorption spectra reveal a sharp Urbach edge, indicating low valence band disorder. Lattice disorder deep defect concentration are more likely to occur in samples higher...
In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity (∼4200Sm−1) revealed surprisingly Kelvin temperatures a giant negative magnetoresistance reaching up to 22% 1.28K and 8T. The analysis experimental data has borne evidence the fact that transport in subsystem character...
Scandium nitride (ScN) is a rocksalt-structure semiconductor that has attracted attention for its potential applications in thermoelectric energy conversion devices, as semiconducting component epitaxial metal/semiconductor superlattices. ScN nanolayers of 30 nm thickness were deposited on MgO (001) substrate by reactive sputtering. Epitaxial growth ScN(002) was observed with mosaicity between grains around the {002} axis. Both direct band gaps theoretically predicted measured at 2.59 eV and...
CuSCN thin films (optimized previously for perovskite photovoltaics) are deposited on glass, F:SnO2 (FTO), Au, glass-like carbon (GC), and reduced graphene oxide (rGO). They exhibit capacitive charging in an electrochemical window from ca. −0.3 to 0.2 V vs Ag/AgCl. Outside this window, film is prone chemical structural changes. Anodic breakdown (at 0.5 V) causes restructuring into submicrometer particles denuding of the substrate. The natural p-doping demonstrated by both Hall effect...