A5100695821- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Photonic Crystals and Applications
- Photonic and Optical Devices
- Photocathodes and Microchannel Plates
- Conducting polymers and applications
- Organic Light-Emitting Diodes Research
- Plasmonic and Surface Plasmon Research
- Organic Electronics and Photovoltaics
- Soil Carbon and Nitrogen Dynamics
- Plasma Diagnostics and Applications
- Nanowire Synthesis and Applications
- Spectroscopy and Laser Applications
- Medical Imaging and Analysis
- Optical Coatings and Gratings
- Semiconductor Lasers and Optical Devices
- Laser Design and Applications
- Thin-Film Transistor Technologies
- Genetic Mapping and Diversity in Plants and Animals
- Topological Materials and Phenomena
- Advanced Fiber Laser Technologies
Xi'an University of Science and Technology
2025
Guangdong Pharmaceutical University
2025
University of California, Santa Barbara
2016-2024
Liaocheng University
2024
Cell Technology (China)
2024
Hunan University
2002-2024
Ocean University of China
2014-2023
Peking University
2023
Southeast University
2023
University of California System
2017-2023
The utilization of nonprecious metal electrocatalysts for water-splitting may be the ultimate solution sustainable and clean hydrogen energy. MXene, an emerging two-dimensional material, exhibits many unique properties such as possible metal-like conductivity, hydrophilic surface, rich chemistry, rendering a group promising catalysts catalyst support materials. In this study, exfoliated Ti3C2 MXenes serve substrate to perpendicularly grow uniform mesoporous NiCoP nanosheets through in situ...
One 3D Cd-MOF, namely, {[(HDMA)2][Cd3(L)2]·5H2O·2DMF}n (LCU-124, LCU indicates Liaocheng University), was synthesized from an ether-containing ligand 1,3-bis(3,5-dicarboxylphenoxy)benzene (H4L). Its Ln3+-postmodified samples, Eu3+@LCU-124 and Tb3+@LCU-124, were obtained through cation exchange of dimethylamine (HDMA) with Eu3+ Tb3+. The successful entry rare earth into LCU-124 by modification verified IR, XRD, XPS, EDS mapping, luminescence spectra. proportion Eu3+/Tb3+ adjusted during the...
We present efficient red InGaN 60 × μm2 micro-light-emitting diodes (μLEDs) with an epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor deposition using selective area growth. μLEDs show a uniform electroluminescence. At low current density of 1 A/cm2, the emission peak wavelength is 623 nm full-width half maximum 47 nm. external quantum efficiency (EQE) measured in integrating sphere as high 4.5%. These results suggest significant progress exploring technology.
We demonstrate a significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes (μLEDs). The peak external (EQE) the packaged 80 × μm2 μLEDs was largely increased to 6.0% at 12 A/cm2, representing process in exploring μLEDs. improvement EQE is attributed efficiency, which confirmed by electron–hole wavefunction overlap well from band gap simulation and photoluminescence intensity ratio room temperature/low temperature. Ultrasmall 5 were also obtained, show high 4.5%....
We demonstrate the realization of plasmonic analog electromagnetically induced transparency (EIT) in a system composing two stub resonators side-coupled to metal-dielectric-metal (MDM) waveguide. Based on coupled mode theory (CMT) and Fabry-Perot (FP) model, respectively, formation evolution mechanisms plasmon-induced by direct indirect couplings are exactly analyzed. For coupling between resonators, FWHM group index transparent window inter-space more sensitive than width one cut, high up...
Objective . To develop a computer-aided method that reduces the variability of Cobb angle measurement for scoliosis assessment. Methods A deep neural network (DNN) was trained with vertebral patches extracted from spinal model radiographs. The curve calculated automatically slopes predicted by DNN. Sixty-five in vivo radiographs and 40 were analyzed. An experienced surgeon performed manual measurements on aforementioned Two examiners used both proposed methods to analyze Results For...
Red micro-light-emitting diodes (μLEDs) have been generated significant interest for the next generation μLEDs displays. It has shown that external quantum efficiency (EQE) of AlInGaP red markedly decreases as size goes to very small dimension. Here, we demonstrate size-independent peak EQE 611 nm InGaN μLEDs. Packaged show a varied from 2.4% 2.6% device area reduces 100 × 20 μm2. These results promising potential realizing high μLED with using materials.
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based µLEDs, the external quantum efficiency (EQE) of InGaN µLEDs has less influence from size effect. Moreover, exhibit a much more robust device performance even operating at high temperature up 400 K. We review progress μLEDs. Novel growth methods relax strain and increase wells are discussed.
AlGaN-based UV-A LEDs have wide applications in medical treatment and chemical sensing; however, their efficiencies are still far behind visible or even shorter wavelengths UV-C counterparts because of the large lattice mismatch between low-Al-content active region AlN substrate. In this report, we investigated composition thickness quantum barrier terms LED performance. Due to improved strain management better carrier confinement, efficient (320 nm - 330 nm) with EQEs up 6.8% were...
The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. results show that two peaks obtained Gaussian fitting both relate to the emission from localized states. By TRPL lifetimes at various energies, depths corresponding In-rich regions quasi-MQWs are obtained. Using a model we proposed, suggest compositional fluctuations In content variation well width responsible...
We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density GaN/patterned sapphire templates. The were clearly identified, and no clusters observed by atom probe tomography measurements. LEDs (0.1 mm2 size) show an output power of 2.4 mW at 100 mA a peak external quantum efficiency 1.3% drop. In addition, the exhibit small blue-shift only 11 as injection current increases from 5 to mA. These results...
We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × µm2 to 100 µm2, grown on low defect density large area GaN template patterned sapphire substrate. Atom probe tomography (APT) gave insights quantum wells (QWs) thickness indium composition indicated that no clusters were observed in QWs. The showed small wavelength blueshift 5 nm, as current increased 90 A/cm2 exhibited size-independent EQE 2% by sidewall passivation...
In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates sapphire. Through application an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout growth, high-In quantum wells (QWs) can be with improved crystal quality. Improvement design growth also yields higher power...
Predicting drug–target interactions (DTIs) is a crucial step in the development of new drugs and drug repurposing. In this paper, we propose novel prediction model called MCF-DTI. The utilizes SMILES representation sequence features targets, employing multi-scale convolutional neural network (MSCNN) with parallel shared-weight modules to extract from side. For target side, it combines MSCNN Transformer capture both local global effectively. extracted are then weighted fused, enabling...
Exploring the possibility of application roof cutting pressure relief and filling support collaborative roadway protection technology has important forward-looking significance for deep coal mine mining. This study addresses large deformation problems mining in 03 working face a by proposing theory protection. CO₂ mineralized materials were developed, optimal scheme was determined through theoretical analysis numerical simulation. Field tests conducted to validate optimize parameters, stress...
A hole injection layer (HIL) is designed in GaN-based light emitting diodes (LEDs) between multiple quantum wells and p-AlGaN electron blocking (EBL). Based on numerical simulation by apsys, the band diagram adjusted HIL, leading to improved hole-injection efficiency. The HIL a p-GaN buffer grown at low temperature (LT_pGaN) last barrier before EBL. output power of fabricated LED device with LT_pGaN enhanced 128% 100 A/cm2, while efficiency droop reduced 33% compared conventional LED.
We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep QWs and GaN barriers. Without using any phosphors, this LED chip can be tuned to realize wide-range multicolor emissions from red yellow under different injection currents. In partical, when the current reaches upper level above 100 mA, LEDs will achieve white emission with a very high color rending index (CRI) of...