A5028072450- Plasmonic and Surface Plasmon Research
- Quantum and electron transport phenomena
- Microfluidic and Bio-sensing Technologies
- Gold and Silver Nanoparticles Synthesis and Applications
- Spectroscopy and Quantum Chemical Studies
- Advancements in Semiconductor Devices and Circuit Design
- Quantum Information and Cryptography
- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Electronic and Structural Properties of Oxides
- Graphene research and applications
- Optical Coatings and Gratings
- Thermal Radiation and Cooling Technologies
- Cold Atom Physics and Bose-Einstein Condensates
- Semiconductor materials and devices
- Electrostatics and Colloid Interactions
- Semiconductor materials and interfaces
- Thermal properties of materials
- Quantum optics and atomic interactions
- Quantum chaos and dynamical systems
- Ferroelectric and Piezoelectric Materials
- Photonic and Optical Devices
- Near-Field Optical Microscopy
- Physics of Superconductivity and Magnetism
- Electrowetting and Microfluidic Technologies
National Institute for Research and Development in Microtechnologies
2015-2024
Centre de Nanosciences et de Nanotechnologies
2017
Stanford SystemX Alliance
2017
International Centre of Biodynamics
2008-2011
Université de Montréal
2006-2010
Arizona State University
2005
The University of Texas at Arlington
2001-2003
The dielectric behavior of a linear cluster two or more living cells connected by tight junctions is analyzed using spectral method. polarizability this system obtained as an expansion over the eigenmodes response operator, showing clear separation geometry from electric parameters. eigenmode with second largest eigenvalue dominates junction between particles tightens, but only when applied field aligned axis. This effect explains distinct low-frequency relaxation observed in impedance...
Based on first principles electronic structure calculations using the Coherent Potential Approximation (CPA) in Blackman–Esterling–Berk (BEB) multiscattering formalism and variable range hopping (VRH) model proposed by Mott, we evaluate low temperature dc conductivity its dependence for n-doped wurtzite-type M:ZnO, with M = Al, Ti, Mn, at concentrations of 2, 5 10 at.% respectively. We theoretically determine phenomenologic quantities expression conductivity, as well which VRH is applicable...
We investigate the effect of orbital overlap on optical matrix elements in empirical tight-binding models. Empirical models assume an orthogonal basis (atomiclike) states and a diagonal coordinate operator which neglects intra-atomic part. It is shown that, starting with atomic not orthogonal, orthogonalization process induces extends range effective Hamiltonian. analyze simple show that non-orthogonality plays important role elements. In addition, procedure gives formal justification to...
The capacitance of an arbitrarily shaped object is calculated with the same second-kind integral equation method used for computing static and dynamic polarizabilities. simply dielectric permittivity multiplied by area divided squared norm Neumann-Poincaré operator eigenfunction corresponding to largest eigenvalue. this varies slowly shape thus enabling definition two scale-invariant factors perturbative calculations capacitance. result extended a special class capacitors in which electrodes...
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by tight-binding method. The characterized proportionality of Dresselhaus Hamiltonians at $\Gamma $ and $X$ points in Fano resonances. present results suggest that large spin polarization can be obtained for energy windows exceed significantly splitting. We also formulate two conditions are necessary existence with polarization.
The boundary integral equation (BIE) method ascertains explicit relations between localized surface phonon and plasmon polariton resonances the eigenvalues of its associated electrostatic operator. We show that group-theoretical analysis Laplace can be used to calculate full set eigenfunctions operator for shapes shells described by separable coordinate systems. These results not only unify generalize many existing studies, but also offer us opportunity expand study phenomena such as...
We have calculated electronic and optical properties of $\mathrm{Si}∕\mathrm{Be}{\mathrm{Se}}_{0.41}{\mathrm{Te}}_{0.59}$ heterostructures by a semiempirical $s{p}^{3}{s}^{*}$ tight-binding method. Tight-binding parameters band bowing $\mathrm{Be}{\mathrm{Se}}_{0.41}{\mathrm{Te}}_{0.59}$ are considered through recent model for highly mismatched semiconductor alloys. The the measurements conduction offset lead to type II heterostucture with minimum in Si layer valence maximum layer. structure...
In a recent paper [Phys. Rev. B 72, 153314 (2005)], the $k^{3}$-Dresselhaus term in contacts and full form of current operator are considered for spin-dependent tunneling through symmetric barrier. The authors found that has much larger influence on spin polarization than it was initially thought. this Comment we will show their treatment other problem, contacts, is incorrect. Their proposed solution simply does not obey Schr\"{o}dinger equation. context also comment definition suitability...
The time-dependent behavior of a two-level system interacting with quantum oscillator is analyzed in the case coupling larger than both energy separation between two levels and ($\Omega < \omega \lambda $, where $\Omega $ frequency transition levels, $\omega oscillator, $\lambda oscillator). Our calculations show that amplitude expectation value coordinate decreases as undergoes from one level to other, while transfer probability staircase-like. This explained by interplay adiabatic...
We report a new model for highly mismatched semiconductor (HMS) alloys. Based on the Anderson impurity Hamiltonian, generalizes recent band anticrossing (BAC) model, which successfully explains bowing in semiconductors. Our is formulated empirical tight-binding (ETB) theory and uses so-called $s{p}^{3}{s}^{*}$ parameterization. It does not need extra parameters other than bulk ones. The has been applied to $\mathrm{Be}{\mathrm{Se}}_{x}{\mathrm{Te}}_{1\ensuremath{-}x}$ alloy. BeTe BeSe are...
The success of a ferroelectric tunnel junction (FTJ) depends on the asymmetry electron tunneling as given by electroresistance (TER) effect. This characteristic is mainly assessed considering three transport mechanisms: direct tunneling, thermionic emission, and Fowler-Nordheim tunneling. Here, analyzing effect temperature TER, we show that taking into account only these mechanisms may not be enough in order to fully characterize performance FTJ devices. We approach with non-equilibrium...
Coherent transport through resonant tunneling diodes at high bias is determined by the transfer of carriers described momentum and energy from a bath in emitter central resonance to collector. Simplified treatments coherent carrier assume transverse dispersions be identical parabolic device. This results that dominated $\ensuremath{\Gamma}$ zone center. Other work has shown more realistic result off-zone center current flow. Incoherent scattering adds degrees freedom match...
An understanding of the mechanical behavior polymeric materials is crucial for making advancements in applications and efficiency nanocomposites, encompasses their service life, load resistance, overall reliability. The present study focused on prediction biopolymeric nanocomposites with nano-clays as nanoadditives, using a new modeling simulation method based Comsol Multiphysics software 6.1. This considered complex case flake-shaped nano-clay additives that could form aggregates along...