A5071253080- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Photovoltaic System Optimization Techniques
- Silicon Nanostructures and Photoluminescence
- solar cell performance optimization
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Copper-based nanomaterials and applications
- Integrated Circuits and Semiconductor Failure Analysis
Middle East Technical University
2017-2022
Abstract We present the feasibility of integrating substoichiometric molybdenum oxide (MoO x ) as hole‐selective rear contact into production sequence industrial scale p‐type crystalline silicon (c‐Si) solar cells. Thin films MoO are deposited directly on c‐Si by thermal evaporation at room temperature. It is found that Ag/MoO /p‐type structure exhibits low resistivity and modest surface recombination current density. The attained peak efficiency ( η fabricated cells 17.65% with V oc 626 mV,...
In this work, we demonstrate a strong correlation between crystalline silicon (cSi) base doping concentration and the performance of cSi/MoOx heterojunction solar cell by investigating structure numerically based on Silvaco TCAD simulation tool experimentally. The n-type cSi was scanned in 1 × 1015 – 2 1016 cm-3 range. Simulation results show that utilizing highly doped wafer degrades conversion efficiency cell. Efficiency 11.16% has been obtained from for while value reduces to less than 4%...
Electrical activation of implanted phosphorus can be carried out simultaneously with boron dopants at high temperatures or separately lower temperatures. In this study, we investigate the effect and low-temperature annealing processes for dopant following phosphorous implantation process in n-type c-Si. Symmetrically wafers are activated 875 °C (low temperature) 1050 (high subsequently coated PECVD SiNx:H. iVoc values samples significantly decrease while those increase a typical firing peak...
In this study, we report on the passivation quality of atomic layer deposition grown ultra-thin Al2O3 and capped with plasma-enhanced chemical vapor deposited SiNx Cz p-type wafers for rear side a passivated emitter cell (PERC). Different activation recipes using N2, forming gas (FG), two-step annealing different durations are investigated before deposition. The effect thicknesses corresponding processes Al2O3/SiNx performance, after high temperature firing step, is studied to reach new...
This study focuses on optimization of silicon nitride (SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> ) Anti Reflective Coating (ARC) layer deposited the front side industrial Passivated Emitter and Rear Cell (PERC) type solar cells in an tube plasma enhanced chemical vapor deposition (PECVD) tool. Reflection thickness studies ARC was carried out through a matrix composed critical parameters. Characterization layers were conducted...
The passivated emitter and rear cell (PERC) is an advantageous type of solar to reduce surface recombination [1] along with its improved back reflectivity [2]. Therefore, many research developments have been taking place on this increase the overall performance. In study, different local contact opening patterns (line dash) formed by industrial-type picosecond laser which has 532 nm wavelength fixed (LCO) width M2 p-type mono commercial blue wafers. Manufactured cells are investigated in...