A5107699831- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Laser Material Processing Techniques
- Advanced Semiconductor Detectors and Materials
- Advanced Surface Polishing Techniques
- Chalcogenide Semiconductor Thin Films
Changchun University of Science and Technology
2024
University of Bedfordshire
2013
High-quality III–V quantum structures, advanced epitaxial technologies, and characterization methods are essential to drive the development of infrared optoelectronic materials devices. As an important component type II superlattices, InAs/InxGa1−xAsySb1−y would play role in field high-performance detectors due their excellent luminescence efficiency high crystal quality. However, interfacial characteristics associated minority carrier lifetime still difficult identify. In this paper, atomic...
This paper discusses the effect of pulse repetition rates on silicon wafer modification by four-beam laser interference. In work, interference was used to pattern single crystal wafers for fabrication dots, and different were applied process in air. The results obtained from 10 exposure pulses with fluence 283mJ/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , 1Hz, 5Hz 10Hz, wavelength 1064nm duration 7-9ns. have been observed using...