A5070756316- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Gyrotron and Vacuum Electronics Research
- Particle accelerators and beam dynamics
- Plasma Applications and Diagnostics
- Plasma Diagnostics and Applications
- Semiconductor materials and devices
- Particle Accelerators and Free-Electron Lasers
- High-pressure geophysics and materials
- Laser Design and Applications
- Force Microscopy Techniques and Applications
- Ion-surface interactions and analysis
- Pulsed Power Technology Applications
- Advanced Surface Polishing Techniques
- Carbon Nanotubes in Composites
- Advanced Fiber Laser Technologies
- Microwave Engineering and Waveguides
- Copper Interconnects and Reliability
- Advanced materials and composites
- Catalytic Processes in Materials Science
- Advanced X-ray Imaging Techniques
- Mechanical and Optical Resonators
- Railway Systems and Energy Efficiency
- Advanced Materials Characterization Techniques
- Nanowire Synthesis and Applications
Institute of Applied Physics
2014-2023
Russian Academy of Sciences
1995-2023
ITMO University
2019-2022
A.M. Obukhov Institute of Atmospheric Physics
2021
P.N. Lebedev Physical Institute of the Russian Academy of Sciences
2020
Skolkovo Institute of Science and Technology
2020
Russian Quantum Center
2020
National University of Sciences and Technology
2020
Petersburg State Transport University
2018-2020
Moscow Institute of Physics and Technology
2020
We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta-doping. The main features of our are: a) the use rapid gas switching system, (b) design providing laminar flow. These provide creation ultra-sharp interfaces between doped and undoped material minimize prolonged "tails" formation in doping profile. It is proved by optical emission spectroscopy that time not more than 10 seconds. Using we have grown nanometer-thin layers boron diamond. FWHM concentration...
Diamond is desired for active semiconducting device because of it high carrier mobility, voltage breakdown resistance, and thermal diffusivity. Exploiting diamond as a semiconductor hampered by the lack shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial ‘delta doped’ layers have been grown on ultra smooth surfaces which demonstrate p type conduction with enhanced Hall mobilities up 120 cm 2 /Vs sheet...
Abstract The effect of nitrogen addition on the growth rate, quality, and properties polycrystalline diamond grown by microwave plasma assisted (MPA)CVD is investigated. Two series experiments are performed at two different power densities (40 110 W cm ‐3 ) using a 2.45 GHz cylindrical reactor. results show that beneficial more distinct higher densities. To investigate with addition, thick disk 50 mm diameter an ppm ellipsoidal has thermal conductivity 17.3 ‐1 K dielectric loss tangent 3.7 ×...
A high-power active microwave pulse compressor is described that operates by modulating the quality factor of an energy storage cavity means mode conversion controlled a triggered electron-beam discharge across switch cavity. This Letter describes principle operation, design cavity, configuration used for tests, and experimental results. The produced output pulses with 140-165 MW peak power, record power gains 16∶1-20∶1, FWHM duration 16-20 ns at frequency 11.43 GHz.
The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD conditions. Also, the influence misorientation angle investigated. Heavily doped layers are grown gas pressures methane contents, with maximum concentration in layer reaching 7 × 10 19 cm −3 . ratio center to total content was determined. studies aimed determine conditions for creating ensembles a high localized nanometer accuracy.
Results obtained in several experiments on active rf pulse compression at $X$ band using a magnicon as the high-power source are presented. In these experiments, microwave energy is stored high-$Q$ ${\mathrm{TE}}_{01}$ and ${\mathrm{TE}}_{02}$ modes of two parallel-fed resonators, then discharged switches activated with rapidly fired plasma discharge tubes. Designs tests versions compressor described. coherent superposition was demonstrated 5--9 MW level incident power. The compressed pulses...
Results of numerical calculations and experimental investigations an active Ka-band microwave pulse compressor are presented. The is based on a running-wave, three-mirror, quasioptical resonator utilizing diffraction grating whose channels embody plasma discharge tubes that constitute the switch. principle compression rapidly changing resonator's output coupling coefficient ($Q$ switching) by initiating discharges in channels. Excitation was achieved with up to 250 kW 34.29 GHz microwaves...
Abstract The parameters of a pulsed microwave discharge in 2.45 GHz chemical vapour deposition (CVD) reactor used for diamond growth are studied. It is shown that the use pulsed-wave mode allows one to increase rate polycrystalline films by 2–3 times without deterioration their quality fixed mean power and specified area. An optimal pulse repetition found, at which both film higher than other rates (for an equal power). We explain this effect near-surface atomic hydrogen density. value...
The microwave discharge produced in gases by millimeter wave radiation beams is characterized high plasma density, and allow one to control the form size of maintained both free space near surfaces various materials. This paper reviews results studying dense plasmas discharges, which are four two crossing continuous a gyrotron at frequencies 30 GHz 28 GHz, respectively. using such discharges for advancing technique chemical vapor deposition diamond films described. Furthermore, new on...