Emerick Y. Guillaume

ORCID: 0000-0003-0728-4053
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About
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Research Areas
  • Diamond and Carbon-based Materials Research
  • High-pressure geophysics and materials
  • Thin-Film Transistor Technologies
  • Graphene research and applications
  • Plasmonic and Surface Plasmon Research
  • Quantum, superfluid, helium dynamics
  • Advanced Chemical Physics Studies
  • Catalysis and Oxidation Reactions
  • Advanced Surface Polishing Techniques
  • Silicon Nanostructures and Photoluminescence
  • Quantum and electron transport phenomena
  • Chemical and Physical Properties of Materials
  • Electronic and Structural Properties of Oxides
  • Vacuum and Plasma Arcs
  • Metamaterials and Metasurfaces Applications

University of Namur
2023-2024

Hasselt University
2023-2024

IMEC
2023-2024

Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis reactions involving H-radical vacancies on H-passivated surfaces exposed radical-rich atmosphere. By means first principles calculations -- density functional theory climbing image nudged elastic band method transition states related these identified characterised. In addition,...

10.1016/j.carbon.2024.118949 preprint EN arXiv (Cornell University) 2024-02-20

Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate impact of strain on zero-phonon line (ZPL) position GeV$^0$. Both hydrostatic and linear modeled using density functional theory GeV$^0$ concentrations $1.61$ \% down to $0.10$ \%. We present qualitative quantitative differences between two types: tensile compressive strain, red-and blue-shifted ZPL positions expected, respectively, with a relation shift experienced...

10.48550/arxiv.2412.14321 preprint EN arXiv (Cornell University) 2024-12-18

Radical attack and subsequent hydrogen migration are thought to play an important role in the atomic-scale mechanisms of diamond chemical vapor deposition (CVD) growth. We perform a comprehensive analysis reactions involving H-radical vacancies on H-passivated surfaces. The energy barriers during these early stages growth computed insights into best conditions (100) surface presented, along with coverage resulting from plasma exposure. Furthermore, they provide picture relative likelihood...

10.2139/ssrn.4334690 article EN 2023-01-01

2D materials offer a large variety of optical properties, from transparency to plasmonic excitation. They can be structured and combined form heterostructures that expand the realm possibility manipulate light interactions at nanoscale. Appropriate numerically efficient models accounting for high intrinsic anisotropy are needed. In this article, we retrieve relevant parameters describe response homogeneous material microscopic approach. Well-known effective vertical heterostructure (stacking...

10.48550/arxiv.2309.14899 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis reactions involving H-radical vacancies on H-passivated surfaces exposed radical-rich atmosphere. By means first principles calculations---density functional theory climbing image nudged elastic band method---transition states related these identified characterised compute accurate...

10.2139/ssrn.4628469 preprint EN 2023-01-01

Two-dimensional (2D) materials offer a large variety of optical properties, from transparency to plasmonic excitation. They can be structured and combined form heterostructures that expand the realm possibility manipulate light interactions at nanoscale. Appropriate numerically efficient models accounting for high intrinsic anisotropy 2D are needed. In this article, we retrieve relevant parameters describe response homogeneous material microscopic approach. Well-known effective vertical...

10.1103/physrevb.108.245412 article EN Physical review. B./Physical review. B 2023-12-13
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