A5037664994- Carbon Nanotubes in Composites
- Graphene research and applications
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- Radiation Effects in Electronics
- Quantum Computing Algorithms and Architecture
- Analog and Mixed-Signal Circuit Design
- GaN-based semiconductor devices and materials
- Stochastic Gradient Optimization Techniques
- Organic Electronics and Photovoltaics
- Advanced Drug Delivery Systems
- Parallel Computing and Optimization Techniques
- Advancements in Transdermal Drug Delivery
- Nanopore and Nanochannel Transport Studies
- Curcumin's Biomedical Applications
- Silicon Carbide Semiconductor Technologies
- Quantum and electron transport phenomena
- Interconnection Networks and Systems
- Advancements in Battery Materials
- Nanotechnology research and applications
- 2D Materials and Applications
- Mechanical and Optical Resonators
Peking University
2014-2025
National University of Singapore
2024
Jilin University
2024
National Engineering Research Center of Electromagnetic Radiation Control Materials
2013
State Key Laboratory of Electronic Thin Films and Integrated Devices
2013
Cooler electrons for transistors The operating power of field-effect is constrained in part by the minimum change voltage needed to current output. This subthreshold swing (SS) limit caused hotter from a thermal electron source leaking over potential gate electrode. Qiu et al. show that graphene can act as Dirac creates narrower distribution energies. When coupled carbon nanotube channel, decrease SS would allow supply be decreased 0.7 0.5 volts. Science , this issue p. 387
Abstract The growth of artificial intelligence leads to a computational burden in solving non-deterministic polynomial-time (NP)-hard problems. Ising computer, which aims solve NP-hard problems faces challenges such as high power consumption and limited scalability. Here, we experimentally present an annealing computer based on 80 superparamagnetic tunnel junctions (SMTJs) with all-to-all connections, solves 70-city traveling salesman problem (TSP, 4761-node problem). By taking advantage the...
Semiconducting single-walled carbon nanotubes (s-SWNTs) with diameters of 1.0–1.5 nm (with similar bandgap to crystalline silicon) are highly desired for nanoelectronics. Up date, the highest reported content s-SWNTs as-grown is ∼97%, which still far below daunting requirements high-end applications. Herein, we report a feasible and green pathway use H2O vapor modulate structure intermetallic W6Co7 nanocrystals. By using resultant nanocatalysts high percentage (1 0 10) planes as structural...
Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, off-state current and small on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed tested. This FBG differs normal top-gate by an extra feedback-gate, connected directly to the drain electrode of FET. It demonstrated that semiconducting CNT with 1.5 nm may exhibit low about...
Although chemical vapor deposition (CVD)-grown carbon nanotube (CNT) arrays are considered ideal materials for constructing high-performance field-effect transistors (FETs) and integrated circuits (ICs), a significant gap remains between the required achieved densities purities of CNT arrays. Here, we develop directional shrinking transfer method to realize up 10-fold density amplification array films without introducing detectable damage or defects. In addition, improves film uniformity...
In the realm of modern materials science, horizontally aligned carbon nanotube arrays stand as promising for development next-generation integrated circuits. However, their large-scale integration has been impeded by constraints current fabrication techniques, which struggle to achieve necessary uniformity, density, and size control arrays. Overcoming this challenge necessitates a significant shift in approaches. Herein, we present nano-seeding method that revolutionized preparation catalyst...
An analytical model is proposed in this paper for the surface electric field around drain-side gate edge AlGaN/GaN HEMT to which leakage, current collapse, and so on are highly related. Conformal mapping implemented mirror device structure into a simplified geometry solution Laplace equation thus achieved. Obtained from model, shows high peak edge, cause many reliability issues HEMTs. The then used study main factors that may impact distribution, such as drain voltage, thickness of barrier,...
Abstract The device standards necessary for high‐performance carbon nanotube (CNT) field‐effect transistors (FETs) integrated circuits (ICs) are discussed by illustrating key metrics. Recent advances in solution‐processed CNT network‐materials introduced and some important progress made CNT‐network film‐based ICs is explored. status of aligned thin‐film materials representative work electronics discussed. Finally, the major challenges to further development prospects this exciting field summarized.
Twisted bilayer graphene (TBG) generates significant attention in the fundamental research of 2D materials due to its distinct twist-angle-dependent properties. Exploring efficient production TBG with a wide range twist angles stands as one major frontiers moiré materials. Here, local space-confined chemical vapor deposition growth technique for high-quality single-crystal ranging from 0° 30° on liquid copper substrates is reported. The clean surface, pristine interface, high crystallinity,...
Diodes based on p-n junctions are fundamental building blocks for numerous circuits, including rectifiers, photovoltaic cells, light-emitting diodes (LEDs), and photodetectors. However, conventional doping techniques to form p- or n-type semiconductors introduce impurities that lead Coulomb scattering. When it comes low-dimensional materials, controllable stable is challenging due the feature of atomic thickness. Here, by selectively depositing dielectric layers Y2O3 AlN, direct formation...
The main challenge for application of solution-derived carbon nanotubes (CNTs) in high performance field-effect transistor (FET) is how to align CNTs into an array with density and full surface coverage. A directional shrinking transfer method developed realize aligned based on randomly orientated CNT network film. Through transferring a film onto stretched retractable followed by process, alignment degree increase the multiple. quadruply shrunk films present well alignment, which identified...
A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance material/structural parameters of SGD are explored numerical simulation verified by experiment results. Based these results, optimization strategy outlined, high CNT SGDs fabricated demonstrated to surpass other published diodes. In particular exhibits rectifier factor up 1.4...
Abstract Negative photoconductance (NPC) detectors have attracted continuous attention for constructing advanced and novel optoelectronic devices, including reconfigurable image sensors optosynaptic systems, especially by combining NPC with positive (PPC). However, devices suffer from much lower photosensitivity, slower response speed, poor stability, in the infrared range. In this work, controllable based on organic‐gated carbon nanotube field‐effect transistors (OG‐CNT FETs) are reported...
Curcumin, a naturally occurring poorly water-soluble polyphenol with broad spectrum, is typical BCS IV drug. The objective of this study was to develop curcumin nanocrystals liposomes the aim improving bioavailability. In study, we prepared cationic particle size only 29.42 nm; such phenomenal range sizes very rare. Moreover, summarized and evaluated parameters nanocrystal preparation process, including methods, formulations, etc., rules concluded can be generalized other processes. To...
This paper presents a systematic exploration on source/drain contact length scaling in carbon nanotube complementary FETs based transfer method.
High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) then fabricated on CNTs, the p- n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated operate at an ultra-low supply down 0.2 V, while displaying...
A new targeted observational algorithm was developed to optimize prediction targets across various regions and variables. This approach utilized design an optimal ENSO monitoring array in the TPOS 2020 project.
Abstract Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate performance of CNT FETs, this method now poses challenges enhancing individual FET and is not suitable scalable fabrication. In paper, we summarize limitations point out that future advancements in manufacturing techniques should prioritize development etching processes.
Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate performance of CNT FETs, this method now poses challenges enhancing individual FET and is not suitable scalable fabrication. In paper, we summarize limitations point out that future advancements in manufacturing techniques should prioritize development etching processes.