A novel approach to the extraction of small signal model parameters for silicon MOSFETs is described. This technique was developed extract a high frequency based only on S-parameter measurements obtain both intrinsic and parasitic resistance parameter values model.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The relationships between device feature size and performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than digital applications. Using the devices in key circuit blocks typical RF transceivers, we review give trends FoMs that characterize active passive devices. These include transit at unity current gain f/sub T/, maximum oscillation MAX/ unit power gain, noise, breakdown voltage, capacitor density, varactor inductor quality, like. We use...

Silicon MOSFET technology using 1.5- mu m gate lengths has demonstrated excellent performance for 900-MHz applications. Circuit results low-noise amplifiers, power mixers, and oscillators this are discussed in comparison to other device technologies. Device 0.6- m-gate-length devices showing the microwave of silicon MOS transistors discussed. These results, together with scaling predictions, indicate that MOSFETs will play a major role 1990s. The indicates be FET choice applications below 3...

Foram avaliadas 7 espécies da mastofauna e 36 avifauna quanto à prevalência intensidade de infestação por carrapatos na ESALQ/USP, no Município Piracicaba, SP. Analisaram-se 52 indivíduos 158 avifauna, parasitados 12418 carrapatos. Os exemplares adultos (N= 7343) foram encontrados em parasitismo nas capivaras enquanto que os imaturos foram, maioria, coletados pequenos mamíferos aves. principais hospedeiros para as formas imaturas, ordem decrescente, gambás (69,1%), (24,4%) urubus (3,7%)....

Abstract Hand‐written fabrication techniques offer new ways of developing customizable, biodegradable, and low‐cost electronic systems. In this work, a level complexity is demonstrated for hand‐written electronics by fabricating passive components, circuits, sensor system on paper. The comprises pencil‐written graphite force‐sensitive resistor, pencil‐drawn RC filter, pen‐written half‐wave rectifier, commercial front‐end voltage amplifier. exhibits linear response pressures up to 1.2 kPa,...

The detailed measurement and characterization of strain-induced performance variations in flexible InGaZnO thin-film transistors (IGZO TFTs) resulted a SPICE TFT model able to simulate tensile compressive bending. This was used evaluate new concept, namely, the active compensation pixel driving circuits for bendable matrix arrays. designed can compensate mobility threshold voltage shifts IGZO TFTs induced by In single TFT, drain current 1 mA varies 83 μA per percent mechanical strain. most...

In this paper, low earth orbit radiation (LEO), temperature, and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, impacts high energetic electron irradiation with fluences up 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> e xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> /cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ,...

We describe the development of a novel RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1kΩ-cm) silicon substrates. This provides platform for cost-effective monolithic integration several TX functions cellular and WLAN system applications. The includes an power LDMOS transistor capable nearly comparable linear saturated characteristics to GaAs solutions in frequency range between 0.8GHz-2.4GHz. present measured results devices bands, as well characterization...

An RF high-voltage CMOS technology is presented for cost-effective monolithic integration of cellular transmit functions. The integrates a modified LDMOS power transistor capable nearly comparable linear and saturated characteristics to GaAs solutions at frequency bands. Measured results multistage amplifier (PA) designs processed on bulk-Si silicon-on-insulator high-resistivity Si substrates (1 kΩ·cm ) are presented. low-band PA achieves greater than 60% power-added efficiency (PAE) with...

We describe an RF MEMS contact switch technology that has been integrated above a 0.5um silicon RFCMOS-on-SOI process.This integration strategy combines gold cantilever contact-switch with custom silicon-on-insulator IC platform.This platform provides several power management functions critical for including high voltage generation, control and analog/digital/RF circuits...The also includes waferlevel-package dielectric encapsulation process the device which is hermetic compatible low cost...

VLSI technologies such as BiCMOS and high speed ECL Bipolar are candidates for mixed mode applications which include RF receiver functions. In order these silicon to achieve low noise characteristics one needs optimize both the active device signal path IC interface. Studies in bonding pad parasitics indicate that losses can be Very significant. This paper models pads presents measured vs. modeled figure data several configurations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 output power. low insertion loss of 0.8 dB isolation 40 obtained 900 MHz.

Safety requirements and physical constraints often prohibit contacting high voltage terminals. This limits the options for monitoring maintaining machinery power distribution grids. We present a non-contact AC (alternating current) frequency measurement system with 600 mm of operation range to overcome this issue. The method relies on measuring electric potential an source using single capacitive electrometer. Simultaneously, distance from is measured time-of-flight sensors. By combining...

Flexible electronics which are easy to manufacture and integrate into everyday items require suitable memory technology that can function on flexible surfaces. Herein, the properties of Ge‐rich GeSbTe (GST) Se‐substituted GeSbSeTe (GSST) phase‐change alloys investigated for application as nonvolatile write‐once rewritable memories in electronics. These materials have a higher crystallization temperature than archetypal composition Ge 2 Sb Te 5 hence better data retention properties....

Today more than ever, low cost, high performance RF devices are in demand due to explosive growth the wireless communications business. As of silicon-based technologies improve, silicon solutions an obvious choice its reliability and ability integrate other analog logic functions on-chip. This paper will highlight some development efforts that taking place improve device for microwave applications. Performance current state-of-the-art bipolar, MOSFET, TFSOI SiGe HBTs be discussed.< <ETX...

Silicon-on-insulator technology utilizing very high resistivity handle wafers demonstrates sufficient performance for many cellular handset requirements. Technologies with either thin or thick device layers show promise. Thick-SOI prototype single pole six throw switch (SP6T) P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-0.1</sub> xmlns:xlink="http://www.w3.org/1999/xlink">dB</sub> of about 40 dBm and -75 dBc harmonic at 35 output have been...

In order to provide increasing data rates demanded by the consumer market, 4G RF cellular front-end is becoming increasingly complex with numerous transmit and receive bands, possibility of multiple antennas new architectures which involves Uplink Downlink carrier aggregation. Such present extreme challenges for conventional fixed band systems composed PAs, switches filters. Tunable technologies using RFCMOS SOI technology on high resistivity substrates are already being deployed in numbers...

We present a method for extracting the BJT SPICE noise model parameters AF and KF based on general analysis of small-signal equivalent circuit role internal sources. The is valid even transistors with poor current gain large base-collector conductance, which output characteristics may not be dominated by base flicker shot noise. consists interpreting measured 1/f corner frequency versus DC data in terms BJT's noisy small signal circuit. Measured presented an implanted-emitter two...

We have developed a true enhancement mode AlGaAs/InGaAs heterostructure insulated-gate FET technology that combines single supply operation with state-of-the-art linearity and efficiency performance for both digital analog portable communications. The measured of this rivals or surpasses the results achieved by PHEMT HBT devices reported to date. For NADC modulation format at 1800 MHz VDS=3.6 V, power-added 50% has been +30.6 dBm output power, -30 dBc adjacent channel power -49 alternate power.

A novel method of extracting the parasitic resistance and inductance values for MESFETs, high electron mobility transistors (HEMTs) is presented. The technique requires use only RF two-port measurement data, extremely accurate, straightforward to implement works equally well both MESFETs HEMTs. makes cold-chip measurements in conjunction with a unique analysis that has proved be fast robust. does not require channel or diode evaluated excessive gate current used measurements.< <ETX...

We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A performance/high power MEMS contact switch can also be integrated in the through above-IC post-processing. This RFCMOS/MEMS provides platform for cost-effective monolithic integration of several RX/TX functions next generation wireless system applications. The silicon SOI includes solid-state switch, and LDMOS transistor with good linear saturated characteristics...

Results for cellular antenna switches using high resistivity silicon-on-insulator (SOI) CMOS technology are presented. The performance of SOI RF switch FETs is presented and compared to a production GaAs pHEMT technology. Data from prototype high-resistivity designs based designs.

In order to provide increasing data rates demanded by the consumer market, 4G RF cellular front-end is becoming increasingly complex with numerous transmit and receive bands, possibility of multiple antennae new architectures which involves Uplink Downlink carrier aggregation. Such present extreme challenges for conventional fixed band systems composed PA's, switches filters. Tunable technologies using RFCMOS SOI technology are already being deployed in number today's advanced handsets. The...

The steady-state velocity-field characteristics for n-type InP are obtained via a Monte Carlo calculation temperatures between 77 and 400 K, as well impurity compensation ratios 0.0 0.9. Electron drift mobilities, peak velocities, electric fields extracted by curve fitting procedure. A comparison with reported GaAs values suggests that has some superior transport is suited high-frequency/gain electronic device applications. This improvement was seen to be due mainly high L-Γ X-Γ energy...