Yaxin Wang

ORCID: 0000-0003-0793-5178
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About
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Research Areas
  • X-ray Diffraction in Crystallography
  • Crystallization and Solubility Studies
  • Magnetic properties of thin films
  • ZnO doping and properties
  • Copper Interconnects and Reliability
  • Terahertz technology and applications
  • Silicon Carbide Semiconductor Technologies
  • Surface and Thin Film Phenomena
  • Magnetic Properties and Synthesis of Ferrites
  • Advanced Memory and Neural Computing
  • Crystallography and molecular interactions
  • Laser Design and Applications
  • Electrostatic Discharge in Electronics
  • Spectroscopy and Laser Applications
  • Quantum and electron transport phenomena
  • Photonic and Optical Devices
  • Gyrotron and Vacuum Electronics Research
  • Pulsed Power Technology Applications
  • Lightning and Electromagnetic Phenomena
  • Physics of Superconductivity and Magnetism

Xi'an University of Technology
2023

Jilin Normal University
2013-2016

Nanjing University
2005-2006

Abstract A general avalanche tester that utilizes an unclamped inductive switching (UIS) test is essential for measuring the maximum energy a power device can withstand before failure. This procedure critical evaluating reliability and robustness of devices. Avalanche testers typically require high-precision hollow inductors with broad adjustable ranges fine increments to accommodate varying conditions different However, this often results in large, heavy, expensive inductor modules. In...

10.1088/1361-6501/ad950b article EN Measurement Science and Technology 2024-11-29

A novel pulse compression diode capable of generating high-voltage, picosecond pulses is introduced. The design concept and technical means the based on semi-insulating gallium arsenide (SI-GaAs) materials are described, followed by presentation its static characteristics with three unique operating states. Typical output rise time for self-breakdown limited to a few nanoseconds (1–2 ns). basic physical mechanism affecting fast conduction device then analyzed, electrode structure optimized...

10.1109/ted.2023.3285719 article EN IEEE Transactions on Electron Devices 2023-06-23
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