A5057568283- 2D Materials and Applications
- Graphene research and applications
- Topological Materials and Phenomena
- Nanowire Synthesis and Applications
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- ZnO doping and properties
- Iron-based superconductors research
- MXene and MAX Phase Materials
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- Advanced Sensor and Energy Harvesting Materials
- Advanced Condensed Matter Physics
- Physics of Superconductivity and Magnetism
- Surface and Thin Film Phenomena
- Silicon Nanostructures and Photoluminescence
- Rare-earth and actinide compounds
- Metal and Thin Film Mechanics
- Heusler alloys: electronic and magnetic properties
- Organic and Molecular Conductors Research
- Carbon and Quantum Dots Applications
- Advanced Photocatalysis Techniques
- Advanced Semiconductor Detectors and Materials
Shenzhen Polytechnic
2024-2025
Hohai University
2021-2024
Shaanxi Normal University
2019-2024
Soochow University
2013-2021
Huazhong University of Science and Technology
2018-2020
Tulane University
2019
Suzhou Institute of Nano-tech and Nano-bionics
2019
Chinese Academy of Sciences
2019
Hefei National Center for Physical Sciences at Nanoscale
2009-2013
University of Science and Technology of China
2009-2013
As an interesting layered material, molybdenum disulfide (MoS 2 ) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS optoelectronic devices are impeded by lack high‐quality p–n junction, low light absorption for mono‐/multilayers, and difficulty large‐scale monolayer growth. Here, it is demonstrated that films with vertically standing structure can be deposited on silicon substrate a scalable sputtering method, forming...
Fast-response and high-sensitivity deep-ultraviolet (DUV) photodetectors with detection wavelength shorter than 320 nm are in high demand due to their potential applications diverse fields. However, the fabrication processes of DUV detectors based on traditional semiconductor thin films complicated costly. Here we report a high-performance photodetector graphene quantum dots (GQDs) fabricated via facile solution process. The devices capable detecting light as short 254 nm. With aid an...
A MoSe2/Si heterojunction photodetector is constructed by depositing MoSe2 film with vertically standing layered structure on Si substrate. Graphene transparent electrode utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms wide response spectrum UV–visible–NIR, high detectivity 7.13 × 1010 Jones, ultrafast speed ≈270 ns, unveiling great potential for high-performance optoelectronic devices. 2D materials such as...
Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, conventional doping method by introducing impurities into suffers from low efficiency, poor reliability, and damage host lattices. Alternatively, surface charge transfer (SCTD) is emerging as a simple yet efficient technique achieve reliable in nondestructive manner, which can modulate carrier concentration injecting or extracting charges between...
Flat bands (FBs), presenting a strongly interacting quantum system, have drawn increasing interest recently. However, experimental growth and synthesis of FB materials been challenging remained elusive for the ideal form monolayer where arises from destructive interference as predicted in 2D lattice models. Here, we report surface self-assembled hydrogen-bond (H-bond) organic frameworks (HOFs) 1,3,5-tris(4-hydroxyphenyl)benzene (THPB) on Au(111) substrate observation FB. High-resolution...
Graphene/Si hole array (SiHA) Schottky junctions show great promise as high-efficiency, cost-effective solar cells. However, their applications are still limited by the severe surface recombination of nano-hole SiHA and inferior device stability arising from volatile oxidant doping. Here, we demonstrate construction high-efficiency graphene/SiHA devices with enhanced performance stability. The micro-hole fabricated photolithography reaction ion etching (RIE) possesses a smooth surface, thus...
We demonstrate the construction of flexible graphene/ultrathin c-Si heterojunction solar cells with excellent flexibility and durability.
CdS nanoparticle-sensitized TiO2 (CdS-TiO2) nanotube arrays are synthesized with a facile one-step electrodeposition technique. In these composited nanostructures, nanoparticles uniformly distribute in the nanotubes and partially embed shell of nanotubes. These structures effectively prevent assembling or clogging improve contact area between shells. Furthermore, size distribution density can be tuned easily by controlling concentration electrolyte. Coupling extends optical absorption from...
Miniaturized stretchable strain sensors are key components in E-skins for applications such as personalized health-monitoring, body motion perception, and human-machine interfaces. However, it remains a big challenge to fabricate miniaturized with high imperceptibility. Here, we reported the first time novel ultraminiaturized based on single centimeter-long silicon nanowires (cm-SiNWs). With diameter of active materials even smaller than that spider silks, these highly imperceptible. They...
High-performance ZnO–MoS<sub>2</sub> core–shell nanopillar (NP) array-based photodetectors are fabricated by taking advantage of the light trapping effect ZnO NP array.
Abstract Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak are commonly based on a photomultiplier tube or an avalanche photodiode, they incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage bulky size. Herein, we develop memory phototransistor detection, by exploiting the charge-storage accumulative...
Aqueous multivalent ion batteries, especially aqueous zinc-ion batteries (ZIBs), have promising energy storage application due to their unique merits of safety, high ionic conductivity, and gravimetric density. To improve electrochemical performance, polyaniline (PANI) is often chosen suppress cathode dissolution. Herein, this work focuses on the zinc behavior a PANI cathode. The mechanism associated with four types protonated/non-protonated amine or imine. achieves capacity 74 mAh g-1 at...
Owing to the unique properties of nontrivial Dirac cones on surface and a narrow bandgap in bulk, topological insulators have become one most promising candidates construction novel electronic photonic devices. Herein, single-crystalline Bi2Se3 nanowires (NWs) were synthesized via Au-catalyzed vapor–liquid–solid (VLS) method. Through transfer NWs onto pre-patterned SiO2/Si substrate, NW/Si heterostructure photodetectors fabricated for first time. The exhibited excellent detection performance...
Abstract The phenomenon of current–voltage hysteresis observed in perovskite-based optoelectronic devices is a critical issue that complicates the accurate assessment device parameters, thereby impacting performance and applicability. Despite extensive research efforts aimed at deciphering origins hysteresis, its underlying causes remain subject considerable debate. By employing nanoscale investigations to elucidate relationship between morphological characteristics, this study offers...
Concave palladium nanocrystals are attractive for their superior catalytic ability arising from high densities of atomic steps and kinks. However, it is still a challenge to generate the concave surface, which not favored by thermodynamics owing its higher surface energy. In this study, nanocubes have been synthesized kinetically in yield via facile one-step wet chemical method using sodium ascorbate (NaA) as reductant an aqueous solution. This process allows independent control average edge...
Topological crystalline insulator SnTe film/Si heterostructure were fabricated, which can function as self-driven, ultrafast and broadband photovoltaic detectors.
Unconventional quasiparticle excitations in condensed matter systems have become one of the most important research frontiers. Beyond two- and fourfold degenerate Weyl Dirac fermions, three-, six- eightfold symmetry protected degeneracies been predicted however remain challenging to realize solid state materials. Here, charge density wave compound TaTe4 is proposed hold fermionic excitation point energy bands. High quality single crystals are prepared, where revealed by directly imaging...
Half-Heusler alloys have recently received extensive attention because of their promising thermoelectric (TE) properties and great potential for applications requiring efficient thermoelectricity. Although the conversion efficiency these materials can be greatly improved by doping, it is still far away from real-life applications. Therefore, search better parent TE compounds deemed urgent. Using a high-throughput method based on first-principles calculations in newly proposed 378...
The half-Heusler semiconductors ZrNiPb and ZrPdPb have attracted considerable attention due to their excellent thermoelectric performance, owing largely appropriate energy bandgap. However, the bandgap is sensitive pressure, which may influence behavior. In this study, effects of pressure on elastic, electronic, thermodynamic properties are investigated based first-principles calculations combined with quasi-harmonic Debye model. After verifying structural, dynamic, mechanical stability, we...
The determination of magnetic ground states in crystalline systems holds significant implications for both fundamental condensed matter physics and practical materials engineering. Marcasite-structured FeTe2, classified as a narrow-gap semiconductor, demonstrates anomalous behavior low-temperature experimental investigations. This study employs first-principles density functional theory (DFT) calculations combined with scanning tunneling microscopy/spectroscopy (STM/STS) to elucidate the...
The p–n homojunctions are essential components for high-efficiency optoelectronic devices. However, the lack of p-type doping in CdS nanostructures hampers fabrication efficient photovoltaic (PV) devices from homojunctions. Here we report a facile solution-processed method to achieve nanoribbons (NRs) via surface charge transfer mechanism by using spin-coated MoO3 nanodots (NDs). NDs-decorated NRs exhibited hole concentration as high 8.5 × 1019 cm–3, with conductivity tunable wide range 7...