- Quantum and electron transport phenomena
- Diamond and Carbon-based Materials Research
- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Mechanical and Optical Resonators
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Boron and Carbon Nanomaterials Research
- Semiconductor materials and devices
- Quantum Information and Cryptography
Nanyang Technological University
2021-2024
Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal nitride (h-BN) are promising spin defects a van der Waals crystal. Understanding the properties of excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting ES D_{ES}=2160 MHz and its associated optically detected magnetic resonance (ODMR) contrast 12% at cryogenic temperature. In to nitrogen (NV^{-}) diamond, ODMR V_{B}^{-} more prominent cryotemperature than room The has...
Nuclear spin polarization plays a crucial role in quantum information processing and sensing. In this work, we demonstrate robust efficient method for nuclear with boron vacancy (VB−) defects hexagonal nitride (h-BN) using ground-state level anticrossing (GSLAC). We show that GSLAC-assisted can be achieved significantly lower laser power than excited-state anticrossing, making the process experimentally more viable. Furthermore, have demonstrated direct optical readout of spins VB− h-BN. Our...
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons bulk silicon, coupling (SOC) intrinsically weak, however, can be enhanced at surfaces and interfaces, or through atomic placement. Here showed that strength of locally more than two orders magnitude manybody wave functions multi-donor dots compared to single donor, reaching...
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons bulk silicon, SOC intrinsically weak, however, can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that strength of coupling locally more than two orders magnitude manybody wave functions multi-donor dots compared to single donor, reaching...
Nuclear spin polarization plays a crucial role in quantum information processing and sensing. In this work, we demonstrate robust efficient method for nuclear with boron vacancy ($\mathrm{V_B^-}$) defects hexagonal nitride (h-BN) using ground-state level anti-crossing (GSLAC). We show that GSLAC-assisted can be achieved significantly lower laser power than excited-state anti-crossing, making the process experimentally more viable. Furthermore, have demonstrated direct optical readout of...
All metal objects support fluctuating currents that are responsible for evanescent-wave Johnson noise in their vicinity due to both thermal and quantum effects. The fields can decohere qubits. It is quantified by the average value of $\mathbf{B}(\mathbit{x},t)\phantom{\rule{0.28em}{0ex}}\mathbf{B}({\mathbit{x}}^{\ensuremath{'}},{t}^{\ensuremath{'}})$ its time Fourier transform. We develop formalism particularly whose dimensions small compared with skin depth, which appropriate regime...