A5007268232- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Radiation Detection and Scintillator Technologies
- Radiation Effects in Electronics
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Catalytic Processes in Materials Science
- Transition Metal Oxide Nanomaterials
- GaN-based semiconductor devices and materials
- Nuclear materials and radiation effects
- Nuclear Physics and Applications
- Porphyrin and Phthalocyanine Chemistry
- Luminescence Properties of Advanced Materials
- Photocathodes and Microchannel Plates
- Ga2O3 and related materials
- Nuclear Materials and Properties
- Medical Imaging Techniques and Applications
- Advanced Optical Sensing Technologies
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Catalysis and Oxidation Reactions
Bolu Abant İzzet Baysal University
2018-2025
Abstract In the presented work, parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray performance photodiodes studied. SPECTRIG MAPD is used to measure scintillation detector based on it. obtained results show that newly developed outperforms its counterparts most it can be successfully applied space application, medicine, high-energy physics security.
We report on a procedure for extracting the SPICE model parameters of RADFET sensor with dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors SiO2, are enhanced by incorporating high-k materials such HfO2 to reduce oxide thickness in modern radiation sensors. The fabrication steps outlined, and parameters, including threshold voltage transconductance, extracted based experimental data. Experimental setups measuring electrical characteristics irradiation...
This paper will present guidelines for creating a SPICE model of RADFETs with different gate oxide thicknesses. Model parameters, such as threshold voltage and carrier mobility, were extracted from the transfer characteristics in saturation region. The was satisfactorily used to simulate thicknesses ranging 40 nm 300 nm.
In this study, the electrical characteristics and surface morphology of Vanadium Oxide-VO2 MOS Devices have been investigated.VO2 thin films were deposited onto n-type (100) silicon wafers by using RF magnetron sputtering system.Thin annealed at different temperatures in Argon environment.The FTIR XRD measurements performed to check morphology, crystal structure bond structures VO2 films, respectively.Except from sample that was 700°C, showed amorphous structure.In ATR-FTIR analysis, V-O-V...
The aim of this study is to investigate the structural transformations erbium oxide (Er2O3) dielectric which can be used as a sensitive region in new generation RadFET radiation sensors under high gamma dose.The Er2O3 film was grown on n-type Si (100) by RF magnetron sputtering and thickness measured 118 nm.The samples were irradiated 60 Co radioactive source with doses 1 kGy, 25 50 kGy.The crystal structure analysed X-ray diffraction method.The variation bond properties as-deposited...
The graphene is one of the most popular materials our age since its discovery.The and derivatives have gained much attention in sensor applications because features (e.g., electronic conductivity, specific surface area, etc.).However, coating challenging for researchers especially Si/SiO2 surfaces due to tension.Many tend use chemical rGO onto such as APTES, TEOS, PEG, HMDS etc.For purpose, we discovered a novel type ultrasonic-assisted method which can be done using any chemicals.To do so,...