A5065667197- ZnO doping and properties
- Laser-induced spectroscopy and plasma
- Gas Sensing Nanomaterials and Sensors
- Laser Material Processing Techniques
- Diamond and Carbon-based Materials Research
- Advanced Memory and Neural Computing
- Copper-based nanomaterials and applications
- Laser Design and Applications
- Transition Metal Oxide Nanomaterials
- Chalcogenide Semiconductor Thin Films
- Ion-surface interactions and analysis
- Ga2O3 and related materials
- Semiconductor materials and devices
- Ocular and Laser Science Research
- Semiconductor Quantum Structures and Devices
- Magnetic properties of thin films
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Advanced Semiconductor Detectors and Materials
- Ferroelectric and Negative Capacitance Devices
- Space Satellite Systems and Control
- Surface and Thin Film Phenomena
- Neuroscience and Neural Engineering
- Cultural Heritage Materials Analysis
- Advanced Sensor Technologies Research
Russian Academy of Sciences
2012-2023
Federal Scientific Research Centre Crystallography and Photonics
2018-2023
Institute on Laser and Information Technologies
2012-2023
National Research Mordovia State University
2019
Institute of Laser Physics
1994-1997
The thin films of zinc oxide have been produced by the pulse laser deposition method at various levels gallium and nitrogen doping. To obtain n-type we used doping with concentration from zero up to 5 %. dependence photoluminescence epitaxial ZnO:Ga on has studied. An optimum range ZnO determined highly effective viewpoint realizing p-n transitions. This range, one hand, defines maximal PL amplitude and, other specifies minimal specific resistance that corresponds an interval 0.125–1.000 %...
The erosion plume resulting from ablation of copper and tantalum targets in vacuum with excimer laser irradiation (308 nm) was studied using Langmuir probe optical emission spectroscopy. ion electron currents were obtained the range energy densities 0.2 to 2.2 J/cm2 at target a probe-to-target distance 10 133 mm. velocity distribution calculated time-of-flight measurements has been revealed as multimodal kind. Curves spatial time dependence current real time. temperature different regions...
Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 465 nm threshold current densities (used in electroluminescence measurements) 1.35, 2, 0.48 A cm-2, respectively. Because the spatial carrier confinement, double heterostructure LED offers a higher intensity lower comparison n-ZnO/p-GaN LEDs.