A5016400089- Advanced Memory and Neural Computing
- Photoreceptor and optogenetics research
- Neural Networks and Reservoir Computing
- Ferroelectric and Negative Capacitance Devices
- Advanced MEMS and NEMS Technologies
- Neuroscience and Neural Engineering
- Photonic and Optical Devices
- Transition Metal Oxide Nanomaterials
- Advanced Measurement and Detection Methods
- CCD and CMOS Imaging Sensors
- Heat and Mass Transfer in Porous Media
- Optical and Acousto-Optic Technologies
- Granular flow and fluidized beds
- Electronic and Structural Properties of Oxides
- 2D Materials and Applications
- Infrared Target Detection Methodologies
- Optical Systems and Laser Technology
- Perovskite Materials and Applications
- Heat Transfer and Optimization
- Neural dynamics and brain function
University of Electronic Science and Technology of China
2021-2025
National Engineering Research Center of Electromagnetic Radiation Control Materials
2021-2025
State Key Laboratory of Electronic Thin Films and Integrated Devices
2025
Institute of Optics and Electronics, Chinese Academy of Sciences
2023
Xi'an Jiaotong University
2022-2023
Abstract Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies. However, controllability stability are the problems that need solved practical applications. Here, by introducing damage‐less ion implantation technology using ultralow‐energy plasma, transport mechanisms of space charge limited current Schottky emission successfully realized controlled in RRAM Bi 2 Se 3...
Abstract For the first time, a configurable NbO x memristor is achieved that can be configured as an artificial synapse or neuron after fabrication by controlling forming compliance current (FCC). When FCC ≤ 2 mA, memristors exhibit resistive‐switching (RS) property, enabling multiple types of synaptic plasticity, including short‐term potentiation, paired‐pulse facilitation, memory, and long‐term memory. ≥ 3 electroformed threshold switching (TS) property with excellent endurance (>10 12...
Abstract Neuromorphic ferroelectric transistors integrating sensing and memory capabilities for photoelectric stimuli have provided a remarkable platform multifunctional bionic vision. However, most hardware demonstrations utilizing cannot implement multiple bio‐visual functions simultaneously under small operating voltage with scalable material systems, which reduces the compatibility complementary metal‐oxide‐semiconductor (CMOS) technology blocks further applications. Herein, an...
Neuromorphic computing based on spiking neural networks (SNNs) has attracted significant research interest due to its low energy consumption and high similarity biological systems. The artificial afferent neuron (ASAN) system is the essential component of neuromorphic interact with environment. This work presents an ASAN simple structure by employing a new architecture one VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Mott memristor...
Abstract sPower consumption has emerged as a central concern in the realm of complementary metal‐oxide‐semiconductor (CMOS) technology. Silicon‐based semiconductor devices have now approached fundamental thermionic limit subthreshold swing (SS), which is 60 mV dec −1 , defined by Boltzmann tyranny. Tunnel field‐effect transistors (TFETs) are considered promising low‐power due to band‐to‐band tunneling mechanism, effectively avoids limit. However, TFETs require establishment staggered band...
Abstract The burgeoning advancement of information technology has engendered a discernible surge in the examination neuromorphic devices, notably drawing broader attention to artificial vision systems endowed with sensory recognition capabilities. Current photoelectric synapse devices employed are generally well‐suited for well‐illuminated conditions, yet exhibit diminished sensitivity weak‐light scenarios, resulting pronounced deterioration accuracy. Here, an ultrasensitive synaptic...
Traditional cooling methods for electronic chips cannot fully meet the increasing requirement of with high heat flux at present, so finding high-efficiency and low-cost functional materials, efficiency has been a hot spot to explore. In this article, using Fluent 6, we construct grooved channel physical model analyze effects ethylene glycol/water ice slurry as material on under conditions that baffle lengths are 60mm, 80mm 90mm, mass flow rates 0.4kg/s, 0.3kg/s 0.2kg/s, fractions 15%, 20%,...
The blind pixels and the flash of infrared detector, which are easily to be detected as target, increase false alarm rate. An algorithm about detection pixel is proposed in this paper. This method based on characteristics that gray values sequence images basically unchanged, there a jump pixels, obvious differences between neighboring spatial domain, joint processing space-time domain used detect pixels. Compared with traditional algorithm, effectively avoids problem target signal...
Inspired by biological mechanoreceptors, we present a flexible artificial mechanoreceptor (FAM) based on high-performance VO2 insulator-metal transition (IMT) memristor with the functions of sensing, spikes coding and information fusion for anthropomorphic neurorobotics. The IMT memristors structure Ti/Pt/VO2/Pt via-hole show bi-directional threshold switching performance, good endurance (>2×109) excellent flexibility (> 103 bending cycles). FAM comprised three receptors (flexible pressure...