Diffusion in silicon of elements from columns III and V the Periodic Table is reviewed theory experiment. The emphasis on interactions these substitutional dopants with point defects (vacancies interstitials) as part their diffusion mechanisms. goal this paper to unify available experimental observations within framework a set physical models that can be utilized computer simulations predict processes silicon. authors assess present state data for basic parameters such point-defect...

The advent of digital microfluidic lab-on-a-chip (LoC) technology offers a platform for developing diagnostic applications with the advantages portability, reduction volumes sample and reagents, faster analysis times, increased automation, low power consumption, compatibility mass manufacturing, high throughput. Moreover, microfluidics is being applied in other areas such as airborne chemical detection, DNA sequencing by synthesis, tissue engineering. In most chemical-detection applications,...

One of the "fundamental" problems in continued scaling MOSFETs is 60 mV/decade room temperature limit subthreshold slope. In this paper, we report initial studies on a new kind transistor, I-MOS. The I-MOS uses modulation breakdown voltage gated p-i-n structure order to switch from OFF ON state and vice versa. Since impact-ionization an abrupt function electric field (or carrier energy), simulations show that device has slope much lower than kT/q. Simulations also it indeed possible make...

One of the fundamental problems in continued scaling transistors is 60 mV/dec room temperature limit subthreshold slope. In part I this work, a novel transistor based on field-effect control impact-ionization (I-MOS) explored through detailed device and circuit simulations. The I-MOS uses gated-modulation breakdown voltage p-i-n diode to switch from OFF state ON vice-versa. Device simulations using MEDICI show that has slope 5 or lower I/sub ON/>1 mA//spl mu/m at 400 K. Simulations were used...

We have demonstrated symmetrically high levels of electrical activation both p- and n-type dopants in germanium. Rapid thermal annealing various commonly implanted dopant species were performed the temperature range 600–850 °C germanium substrates. Diffusion studies also carried out by using different anneal times temperatures. T-SUPREM™ simulations used to fit experimental profiles extract diffusion coefficient dopants.

Bipolar resistive switching was found in thin polycrystalline TiO2 films formed by the thermal oxidation of sputtered Ti films. With a Ag top electrode, film, and Pt bottom bistable with low operating voltage good uniformity observed repeatedly without an initial electrical “forming” process. This phenomenon might be described as formation rupture filamentary conductive path consisting chain atoms. The temperature dependence is discussed terms interstitial ionic diffusion matrix.

A calibration-free, high-resolution analog-to-digital converter designed for a bioluminescence sensor array employs incremental sigma-delta (ΣΔ) modulation to combine the advantages of oversampling with an input multiplexing capability. The resolution ΣΔ modulators can be improved significantly by means technique similar extended counting. In approach proposed in this paper, conversion is accomplished two-step process which residual error from second-order modulator encoded using successive...

The integrated circuit (IC) industry has followed a steady path of shrinking device geometries for more than 30 years. It is widely believed that this process will continue at least another ten However there are increasingly difficult materials and technology problems to be solved over the next decade if actually occur, beyond years great uncertainty about ability scaling metal-oxide-semiconductor field-effect transistor (MOSFET) structures. This paper describes some most challenging issues...

An identical set of thermal oxidation and nitridation experiments has been performed for four common dopants self-diffusion in Si. Selectively perturbing the equilibrium point-defect concentrations by these surface reactions is a powerful tool identifying relative importance various atomic-scale diffusion mechanisms. We obtain bounds on fractional contributions self-interstitial, vacancy, concerted exchange mechanisms arsenic, boron, phosphorus, antimony, Si at temperatures 1100 1000 °C....

Self-diffusion measurements in silicon are extended to the range 800--900 \ifmmode^\circ\else\textdegree\fi{}C by monitoring ${}^{30}\mathrm{Si}$ diffusion isotopically enriched structures. Comparing P, Sb, and self-diffusion under nonequilibrium conditions, we determine that interstitial-mediated fraction of is confined between 0.50 0.62 temperature 800--1100 \ifmmode^\circ\else\textdegree\fi{}C. This allows activation enthalpies 4.68 4.86 eV be determined for interstitial vacancy...

Laser annealing is being investigated as an alternative method to activate dopants and repair the lattice damage from ion implantation. The unique properties of laser process allow for active dopant concentrations that exceed equilibrium solubility limits. However, these super-saturated exist in a metastable state deactivate upon subsequent thermal processing. Previously, this group compared electrical characteristics deactivation behavior common (P, B, Sb) across range conditions. Boron...

Part I of this paper dealt with the fundamental understanding device physics and circuit design in a novel transistor, based on field-effect control impact-ionization (I-MOS). This focuses experimental results obtained various silicon-based prototypes I-MOS. The fabricated p-channel I-MOS devices showed extremely abrupt transitions from OFF state to ON subthreshold slope less than 10 mV/dec at 300 K. These first also significant hot carrier effects resulting threshold voltage shifts...

With the amount of data being stored increasing rapidly, there is significant interest in exploring alternative storage technologies. In this context, DNA-based systems can offer significantly higher densities (petabytes/gram) and durability (thousands years) than current Specifically, DNA has been found to be stable over extended periods time which demonstrated analysis organisms long since extinct. Recent advances sequencing synthesis pipelines have made a promising candidate for...

This paper explores stress management in SiGe with two kinds of structures, namely, epitaxial films on small pillars and fins. In addition to the compliant substrate effect film/fin geometric film/pillar structures plays another important role critical thickness enhancement. The stress-strain states these systems are calculated equilibrium thicknesses predicted, using work method, for different fin thicknesses, pillar radii, Ge concentrations. Compared conventional grown planar bulk...

The authors report “field-programmable rectification” in crystals of rutile TiO2. A “programming” voltage is applied between two Pt electrodes on the surface a crystal. Afterwards, current can pass direction programming voltage, but not reverse direction. polarity rectification be reversed by applying opposite sign. effect was observed (110) and (100) surfaces, (001) surface. proposed mechanism field-induced motion oxygen vacancies, which pile up under negative terminal, eliminating Schottky...

Nonvolatile information storage devices based on an abrupt resistance switch when electric bias is applied are very attractive for future memory applications. Recently, such a was described in ferroelectric Zn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Cd xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> S, but the mechanism of switching remains controversial. Here, we present results that elucidate mechanism, showing metal needs...

GeO 2 was grown by a slot-plane-antenna (SPA) high density radical oxidation, and the oxidation kinetics of GeO2 examined. By SPA no substrate orientation dependence growth rate attributed to highly reactive oxygen radicals with low activation energy demonstrated, which is beneficial three-dimensional structure devices, such as multigate field-effect transistors, form conformal gate dielectrics. The electrical properties an aluminum oxide (Al2O3) metal-oxide-semiconductor stack interfacial...

The feasibility of implementing pyrosequencing chemistry within droplets using electrowetting-based digital microfluidics is reported. An array electrodes patterned on a printed-circuit board was used to control the formation, transportation, merging, mixing, and splitting submicroliter-sized contained an oil-filled chamber. A three-enzyme protocol implemented in which individual enzymes, deoxyribonucleotide triphosphates (dNTPs), DNA templates. templates were anchored magnetic beads enabled...

As magnetization and semiconductor based storage technologies approach their limits, bio-molecules, such as DNA, have been identified promising media for future systems, due to high density (petabytes/gram) long-term durability (thousands of years). Furthermore, nanopore DNA sequencing enables high-throughput using devices small a USB thumb drive thus is ideally suited applications. Due the insertion/deletion error rates associated with base-called reads, current approaches rely heavily on...

The electrical deactivation of arsenic in silicon has been studied with regard to its effect on enhanced diffusion. Experimental structures consist a buried boron layer as an interstitial detector, and fully activated doped laser annealed surface layer. As these are at temperatures between 500 750 °C, the deactivates we observe diffusion A study time reveals that transient similar, indicating strong correlation both phenomena. dependence concentration shows maximum for concentrations 3...

As semiconductor device dimensions continue to decrease, the main challenge in area of junction formation involves decreasing depth while simultaneously sheet resistance. Laser annealing is being investigated as an alternative rapid thermal repair damage from ion implantation and activate dopants. With this technique, uniform, box-shaped profiles are obtained, with dopant concentrations that can exceed equilibrium solubility limits at normal processing temperatures. Unfortunately, these...

The implant species and dose effects of ion implantation, including crossing the amorphization threshold, on transient enhanced diffusion (TED) behavior a boron marker layer in silicon have been studied. It has found that for lower doses, TED is independent. However, higher implanted dependence becomes very significant. at these amorphizing P implants cause more than either Si or As implants. This result explained based fully coupled mechanism impurity dopants where diffuse by temporarily...

This paper presents an alternative approach to measuring the impact of affirmative action on firms. Affirmative is modeled as a series hiring quotas. If quotas are binding, then firm subject will operate with greater costs production, have less elastic demand for inputs, and be able substitute between most inputs. The results consistent hypothesis that affirmative-action regulations significantly constrain firms' behavior. Own-wage elasticities inputs substitutable constrained Further,...

High-performance P-channel Ge FinFETs have been fabricated based on the rapid-melt-growth method. The fully depleted FinFET has an off-state drain leakage current that is two orders of magnitude lower than partially one. channel {110} surfaces provides enhancement effective hole mobility 60% and 28% at field 0.4 MV/cm compared with, respectively, silicon universal our previous work with {100} Ge-on-insulator pMOSFETs.