A5067542763- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Laser Material Processing Techniques
- Laser-induced spectroscopy and plasma
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Laser Design and Applications
- Graphene research and applications
- High-Temperature Coating Behaviors
- Catalytic Processes in Materials Science
- Chalcogenide Semiconductor Thin Films
- Boron and Carbon Nanomaterials Research
- Ion-surface interactions and analysis
- Electronic and Structural Properties of Oxides
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- GaN-based semiconductor devices and materials
- Carbon Nanotubes in Composites
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Advanced Surface Polishing Techniques
- Advanced ceramic materials synthesis
- Luminescence Properties of Advanced Materials
- Ferroelectric and Piezoelectric Materials
National Institute of Materials Physics
2011-2022
Material Physics Center
2005-2008
Institute of Metallurgy and Materials Science
2006
University of Antwerp
1993-2005
Institutul de Fizică Atomică
1989-2000
IMEC
2000
Technical University of Darmstadt
1997
University of British Columbia
1996
Lomonosov Moscow State University
1994-1995
Czech Academy of Sciences, Institute of Physics
1983-1989
This work is focusing on generation, time evolution, and impact the electrical performance of silicon diodes impaired by radiation induced active defects. n-type had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It shown that formation small clusters starts already after irradiation high fluence electrons. An increase introduction rates both point defects increasing energy seen, showing saturation for electron energies above ∼15 The changes in leakage current at low...
A short description of approaches for carbon nanostructures synthesis is made and the advantages using plasma during growth are presented. As a particular example based technique we detail process downstream nanowall (CNW) by radiofrequency expanding beam. The combines magnetron sputtering catalyst deposition enhanced chemical vapor (main gas: argon, active hydrogen, precursor acetylene) in single reactor. analysis focuses on correlation between material properties characteristics measured...
The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments 12 nm layers on blanket silicon, or patterned structures covered with a thin chemical oxide. It shown that the first phase formed NiSi2 which grows epitaxially pyramidal crystals. NiSi occurs quite abruptly around 400 °C when monosilicide layer covers disilicide grains and silicon between. remains stable up to 800 °C, at temperature finally fully transforms NiSi2. show different...
Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dots--QDs) doped with 0.2% mol ${\text{Mn}}^{2+}$, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional ${\text{Mn}}^{2+}$ ions are localized at ${\text{Zn}}^{2+}$ sites subjected to local axial lattice distortion, resulting in observed zero-field-splitting parameter...
The aim of this study was to obtain membranes with antimicrobial activity presenting a complex sandwich-type structure. outer layers are comprised poly(methyl methacrylate) membranes, whereas the inner active layer consists modified commercial membrane achieve properties. This arises due presence silver nanoparticles in material hybrid composition deposited on membrane. polymer colloids and multiwall carbon nanotubes used for both stabilization by interconnections particles as component....
We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was the range of 380–520 °C. samples were analyzed x-ray diffraction and transmission electron microscopy, showed hexagonal (wurtzite) or cubic (zincblende) structure a mixture both phases. Fe concentration on order 1019 cm−3 extended absorption fine data show that is substituting Ga GaN. magnetization measurements...
A new laser method is proposed for the deposition of high purity, hard fcc TiN layers unlimited thickness. The film thickness can be very finely controlled mainly through intermediary number applied pulses as rate only 0.02–0.05 nm/pulse. ablation promoted from a Ti target by intensity multipulse excimer irradiation in low pressure N2 ambient gas while forming compound collected on Si single-crystalline wafer. best results have been obtained an p=10–30 mTorr and distance between support d=10...
Abstract We report the remote growth of carbon nanowalls in a plasma beam sustained by an expanding argon radiofrequency discharge and injected with small amount acetylene presence hydrogen as active gas. The process was investigated varying mass flow rates, ratio nature gases (argon, ammonia/hydrogen, acetylene), substrate temperature, power. Scanning transmission electron microscopy, Raman spectroscopy, diffraction methods were used for investigation deposited material. found that although...
The formation and crystallization of disordered nanosized ZnO resulting from the thermal decomposition nanocrystalline hydrozincite [Zn5(CO3)2(OH)6] has been observed investigated during pulse annealing experiments up to 625 °C in air or vacuum by electron paramagnetic resonance trace amounts substitutional Mn2+ impurity ions, correlation with X-ray diffraction transmission microscopy measurements. mesoporous structure ZnO, which initially forms at 225 175 °C, respectively, further...
Polycrystalline diamond thick films were subjected to annealing in vacuum at temperatures of 1350–1450 °C. The examined by optical absorption, Raman spectroscopy, transmission electron microscopy and energy loss spectroscopy. formation amorphous carbon and/or well-crystallized graphite layers up 20 nm was evidenced along grain boundaries. Intra-granular nanometer-sized islands also observed, sometimes as transformed micro-twin bands. diamond-to-graphite transition occurs such a way that...