A5023513077- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- solar cell performance optimization
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
Sol Voltaics (Sweden)
2015-2019
A GaAs nanowire array solar cell with an independently verified energy conversion efficiency of 15.3% and open-circuit voltage 0.906 V under AM1.5g illumination at 1-sun intensity has been fabricated. This is the highest published for cells twice prior record cells. The fabricated by substrate-based epitaxy but structurally compatible substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. short-circuit current 21.3 mA/cm <sup...
III–V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films have shown impressive performance improvements recent years. To continue this development there is a need for characterization techniques giving quick reliable feedback growth development. Further, which can improve understanding of link between conditions, subsequent processing, cell are desired. Here, we present use nanoprobe system inside scanning...
A GaAs nanowire array solar cell with an independently verified energy conversion efficiency of 15.3% and open circuit voltage 0.906 V under AM1.5g illumination at 1 sun intensity has been fabricated by Sol Voltaics AB, which is the highest published for cells, twice prior record cells. The substrate-based epitaxy but structurally compatible substrate-less aerotaxy fabrication, providing a path to high volume manufacturing. short current 21.3 mA/cm2 was generated in axial pn-junction cores...
We demonstrate a novel and rapid method for nanowire (NW) solar cell processing. NW arrays were embedded in photoresist. The strong absorption of light the NWs leads to self-limited exposure resist, which enables selective removal exposed part opening up tips further UV-exposure technology allows fast low-cost process compared conventional reactive ion etching method.