A5029770503- Gas Sensing Nanomaterials and Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- 2D Materials and Applications
- Cardiac Valve Diseases and Treatments
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Veterinary Oncology Research
- Atherosclerosis and Cardiovascular Diseases
- Cardiovascular Function and Risk Factors
- Transition Metal Oxide Nanomaterials
- Chalcogenide Semiconductor Thin Films
- T-cell and B-cell Immunology
- Advanced Sensor and Energy Harvesting Materials
- Silicon Carbide Semiconductor Technologies
- Advanced Photocatalysis Techniques
- Cardiac pacing and defibrillation studies
- Immune Cell Function and Interaction
- Congenital Heart Disease Studies
- Membrane Separation Technologies
- Advancements in Photolithography Techniques
- Perovskite Materials and Applications
- Graphene research and applications
- VLSI and Analog Circuit Testing
- Topological Materials and Phenomena
University of L'Aquila
2021-2024
Policlinico Universitario di Catania
2023
National Interuniversity Consortium of Materials Science and Technology
2023
Harefield Hospital
2020
Azienda Ospedaliero-Universitaria Policlinico - Vittorio Emanuele
2018
University of Catania
2018
Ferrarotto Hospital
2018
Medical College of Wisconsin
2011-2013
Texas Instruments (United States)
1999-2012
Analogic (United States)
1998
Spontaneous degradation of 2D transition-metal dichalcogenides/chalcogenides (TMDs/MCs) gas sensors in dry/wet air represents one the most significant drawback these interfaces, hampering reproducibility baseline resistance and sensor's signal stability (i.e., creep). Herein, we report a simple protection strategy stimulating formation self-assembled oxide (a-MOx) over TMDs/MCs, which promotes effective passivation underlying surface excellent sensing response. Liquid-phase-exfoliated...
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and chalcogenides (MCs), despite their excellent gas sensing properties, are subjected to spontaneous oxidation in ambient air, negatively affecting the sensor's signal reproducibility long run. Taking advantage of oxidation, we synthesized fully amorphous a-SnO2 2D flakes (≈30 nm thick) by annealing air SnSe2 for two weeks at temperatures below crystallization temperature SnO2 (T < 280 °C). These engineered interfaces, preserving...
Transition‐metal dichalcogenides PtTe 2 , PdTe and NiTe deserve particular attention, due to the presence of type‐II Dirac fermions. As a matter fact, tilted cones afford suitable platform for optoelectronics dissipation‐less carrier‐transport, favored by their ultrahigh carrier mobility, large nonsaturating magnetoresistance. Herein, it is shown that display high‐speed terahertz (THz) detection capability at room temperature, which originates from peculiar band structure with topologically...
Abstract Recently, germanium selenide (GeSe) has emerged as a promising van der Waals semiconductor for photovoltaics, solar light harvesting, and water photoelectrolysis cells. Contrary to previous reports claiming perfect ambient stability based on experiments with techniques without surface sensitivity, here, by means of surface‐science investigations density functional theory, it is demonstrated that actually both: i) the bulk crystals; ii) atomically thin flakes GeSe are prone...
Concomitant mitral transcatheter edge-to-edge repair (M-TEER) and left atrial appendage closure (LAAC) showed to be a feasible approach optimize the treatment of patients eligible for both procedures, but mid-term outcomes are unclear.We retrospectively analyzed consecutive undergoing M-TEER enrolled in local prospective Getting Reduction Mitral Insufficiency by Percutaneous Clip Implantation (GRASP) registry. We compared isolated (n = 58, 58.5%) with those concomitant LAAC 41, 41.5%) from...
The design of functional coatings for touchscreens and haptic interfaces is paramount importance smartphones, tablets, computers. Among the properties, ability to suppress or eliminate fingerprints from specific surfaces one most critical. We produced photoactivated anti-fingerprint by embedding 2D-SnSe2 nanoflakes in ordered mesoporous titania thin films. SnSe2 nanostructures were solvent-assisted sonication employing 1-Methyl-2-pyrrolidinone. combination nanocrystalline anatase enables...
A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BV/sub ceo/ NPN PNP at 45 60 volts, respectively. In addition, ceo//spl times/f/sub t//h/sub fe//spl times/Va figures merit in excess 135 GHz/spl middot/V/20,000 V 130 middot/V/6,500 PNP.
Two-dimensional Layered Amorphous Metal Oxide Sensors (LAMOS) represent a new class of 2D amorphous oxide (a-MOx) interfaces with unveiled properties in gas sensing applications. Herein, we report the humidity and response p- n-type chemoresistive few-layered (2D) a-SnO2, a-In2O3, a-Cr2O3, discussing their reaction mechanisms using DFT modelling electrical tests. LAMOS can be easily prepared by controlled oxidation air large exfoliated TMDs, MCs, TMTH (Transition Dichalcogenides,...
Among layered semiconductors, tin diselenide (SnSe 2 ) deserves particular attention thanks to its high intrinsic electron mobility (462.6 cm V-1 s-1 at T = 300 K) and ultralow thermal conductivity (3.82 W m-1 K-1). So far, some applications of SnSe2 have been proposed in several fields regarding superconductivity, Li- Na- ion batteries, photodetection, photocatalysis, saturable absorbers for eye-safe lasers thermoelectricity. In this work we report the gas sensing performances...
The trench architecture and process flow for a 170 V complementary bipolar technology with isolation bonded wafer substrates is described. Electrical material (micro-Raman) characterization used to show that the optimized results in defect free silicon device regions.
A novel back-gated P-MOSFET structure is fabricated in a high-voltage complementary bipolar technology using BESOI (bonded etch back SOI) substrates. The P+ buried layer regions, used for the PNP BJT are as source and drain N- epi channel region, silicon handle wafer gate, BOX (buried oxide) gate oxide. was to characterize interface between SOI. devices exhibit high sub-threshold slope which attributed state density of about 2/spl times/10/sup 12//cm/sup 2/ at bonding interface....
Buried layers are used in bipolar devices to lower collector resistance bulk silicon and SOI (silicon-on-insulator) technologies. They also with deep trench for isolating different types. This work investigates the effect of buried layer processing on CMOS capacitor reliability, comparing results between substrates. Opposing from technologies indicate degradation mechanisms at play. The starting material requires that metal contaminant gettering be taken account layers.
Abstract Dissecting the mechanisms that support autoantibody production is essential to our understanding of autoimmune diseases such as lupus. Recent work from laboratory has shown regulatory T cells (Tregs) play a key role in suppressing by helping maintain B cell anergy. Our long-term goal understand how Tregs regulate studies indicate helper an intermediate between Treg and anergic cells. Specifically, absence rapidly (within 4 days) drives expansion CD4+GL7+ This gross population can be...
Abstract Regulatory T cells (Tregs) are crucial for the maintenance of immune tolerance and absence Tregs results in significant autoantibody production. This suggests that play a key role B cell tolerance. The mechanism by which regulate has yet to be resolved but important implications our understanding autoimmunity. Using both constitutive inducible models, we show production, due loss anergy. Further studies this is dependent on presence helper cells. We propose dysregulation drive...
In this paper, we present an investigation of the impact mask making imperfections on matching. Comparing optically measured and electrically derived data for line width errors allows pinpointing whether or not limits best achievable device Treating matching critical sub-circuit blocks themselves as test structures, demonstrate a direct methodology assessing process performance high-precision analog products.
Background: Chronic kidney disease (CKD) is common in patients with mitral regurgitation (MR) referred for therapy, often being associated heart failure (HF) and poor prognosis.Purpose: The aim of this prospective, observational study was to evaluate the impact baseline CKD on one-year outcomes MitraClip therapy high surgical risk moderate-to-severe or severe MR presenting HF reduced ejection fraction (HFrEF) mid-range (HFmrEF).Methods: Patients enrolled prospective Getting Reduction Mitral...
Oxide charging, adversely influencing PNP collector-base capacitance, has been observed and modeled physically in a complementary bipolar process that uses dielectric isolation. A practical solution to alleviate this effect is described along with trade-offs involved device design.
Abstract Introduction Patients with transposition of the great arteries (TGA) who underwent atrial switch repair (ASR, Senning or Mustard) and patients congenitally corrected TGA (ccTGA) have a morphological right ventricle in systemic position. Patient (SRV) are prone to exercise intolerance significantly worse survival compared general population. Risk stratification is an important component their management routine clinical assessment. Purpose To describe severity mechanisms limitation...