A5074321016- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Molecular Junctions and Nanostructures
- Electronic and Structural Properties of Oxides
- Nanowire Synthesis and Applications
- Advanced Thermoelectric Materials and Devices
- Advanced Memory and Neural Computing
- Photonic Crystals and Applications
- Electrocatalysts for Energy Conversion
- Advanced Sensor and Energy Harvesting Materials
- Advancements in Battery Materials
- Solid-state spectroscopy and crystallography
- Photonic and Optical Devices
- Iron-based superconductors research
- Advanced Battery Materials and Technologies
- Quantum Dots Synthesis And Properties
- Liver Disease Diagnosis and Treatment
- Long-Term Effects of COVID-19
- Physics of Superconductivity and Magnetism
- COVID-19 Clinical Research Studies
- Advanced battery technologies research
- Plasmonic and Surface Plasmon Research
- Catalysis and Hydrodesulfurization Studies
The University of Tokyo
2014-2025
Tokyo University of Science
2022-2025
Michigan State University
2023-2024
Fuzhou University
2023-2024
China Three Gorges University
2024
University of Chinese Academy of Sciences
2016-2023
Shanghai Institute of Microsystem and Information Technology
2019-2023
Peking University
2023
Peking University Third Hospital
2023
Beijing Institute of Technology
2022-2023
A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by fine-tuning carriers has seldom been seen. We report observation a dome temperature-carrier density diagram MoS(2), an archetypal insulator. By quasi-continuous electrostatic carrier doping achieved through combination liquid and solid gating, we revealed large enhancement transition temperature T(c) occurring at...
Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success graphene. Here, we report fabrication an electric double layer transistor (EDLT, a FET gated by ionic liquids) using MoS2, member transition metal dichalcogenides, archetypal material. The EDLT MoS2 unambiguously displayed ambipolar operation, in contrast to its commonly known bulk property as n-type semiconductor. High-performance operation...
Controlling Chiral Light Emission Circularly polarized light plays important roles in a number of applications such as displays, communication, and sensing. Thus, the ability to produce compact readily controllable sources is important, dichalcogenide materials tungsten diselenide may provide route sources. Zhang et al. (p. 725 , published online 17 April; see Perspective by Zaumseil ) formed an electric-double-layer transistor structure with WSe2 used gated ionic liquid control carrier...
Abstract Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcogenides (TMDs) have now stemmed from simple field effect transistors (FETs) to a variety electronic and opto-valleytronic devices even superconductivity. Among them, superconductivity is the least studied property in TMDs due methodological difficulty accessing it different TMD species. Here, we report systematic study MoSe 2 , MoTe WS by ionic gating regimes. Electrostatic using liquid...
Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals including graphene, transition metal dichalcogenides, black phosphorus. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, electron correlation effects are also expected be significantly changed from bulk systems. However, there few attempts realize novel phenomena correlated 2D crystals. We...
Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into single device, we present method that electronically controls locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent junction was formed, it displayed rectifying I-V characteristics. This diode could perform role the development optoelectronic valleytronic devices.
Two-dimensional crystals, especially graphene and transition metal dichalcogenides (TMDs), are attracting growing interests because they provide an ideal platform for novel unconventional electronic band structures derived by thinning. The thinning may also affect collective phenomena of electrons in interacting electron systems can lead to exotic states beyond the simple picture. Here, we report systematic control charge-density-wave (CDW) transitions changing thickness, cooling rate gate...
As a follow-up of our previous work on pressure-induced metallization the 2H_{c}-MoS_{2} [Chi et al., Phys. Rev. Lett. 113, 036802 (2014)PRLTAO0031-900710.1103/PhysRevLett.113.036802], here we extend pressure beyond megabar range to seek after superconductivity via electrical transport measurements. We found that emerges in 2H_{a}-MoS_{2} with an onset critical temperature T_{c} ca. 3 K at 90 GPa. Upon further increasing pressure, is rapidly enhanced 10 and stabilized 12 over wide up 220...
We report an electric field tuning of the thermopower in ultrathin WSe2 single crystals over a wide range carrier concentration by using double-layer (EDL) technique. succeeded optimization power factor not only hole but also electron side, which has never been chemically accessed. The maximized values are one-order larger than that obtained changing chemical composition, reflecting clean nature electrostatic doping.
We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and on/off current ratio 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 operated at mechanical strain 5% without significant degradation their electrical properties. These results demonstrate the potential for films electronics.
Due to their favourable and rich electronic optical properties, group-VI-B transition-metal dichalcogenides (TMDs) have attracted considerable interest. They earned position in the materials portfolio of spintronics valleytronics communities. The electrical performance TMDs is enhanced by rolling up two-dimensional (2D) sheets form quasi-one-dimensional (1D) tubular structures. fabrication p-n junctions out these would boost potential for optoelectronic devices as such represent a...
We demonstrated an all-dry polymer-to-polymer transfer technique for two-dimensional (2D) crystal flakes using a polyvinyl chloride (PVC) layer deposited on piece of polydimethylsiloxane (PDMS). Unexpectedly, the pickup/release temperatures were modified in wider temperature range simply by changing thickness PVC than plasticizer ratio. Utilizing difference depending film thickness, 2D transferred from thicker to thinner one. This can be utilized flip over van der Waals heterostructures. As...
Graphene exhibits a pronounced photo-thermoelectric effect (PTE) in its in-plane carrier transport and has attracted attention toward various optoelectronic applications. In this study, we demonstrate an out-of-plane PTE by utilizing electron tunneling across barrier, namely, the (TPTE). This was achieved monolayer graphene (MLG)/bilayer hexagonal boron nitride (h-BN)/bilayer (BLG) asymmetric tunnel junction. MLG BLG exhibit different cyclotron resonance (CR) optical absorption energies when...
Moiré effects in two-dimensional (2D) twisted van der Waals structures are attracting great interest owing to the emergence of intriguing physical properties. Despite growing interests, moiré with large twist angles remain unexplored because increase angle is thought quickly suppress size patterns. In this study, we focused on large-angle tungsten ditelluride and discovered two orthogonal one-dimensional (1D) patterns at around 62° 58° using transmission electron microscopy. Their...
The coupling between the valley degree of freedom and optical helicity is one unique phenomena in transition metal dichalcogenides. significant polarization evaluated from circularly polarized photoluminescence (PL) has been reported many dichalcogenides, except MoSe2. This compound an anomalous material showing ultra-fast relaxation states, which causes negligible PL. Meanwhile, electroluminescence (EL) recently a WSe2 light-emitting transistor, providing another method for using freedom....
We demonstrate van der Waals double quantum well (vDQW) devices based on few-layer WSe2 wells and a h-BN tunnel barrier. Due to the strong out-of-plane confinement, an exfoliated exhibits quantized subband states at Γ point in its valence band. Here, we report resonant tunneling negative differential resistance vDQW room temperature owing momentum- energy-conserved between subbands each well. Compared single (QW) with only one QW layer possessing subbands, superior current peak-to-valley...
Abstract We investigated the adhesion of polyvinyl chloride (PVC) to 2D crystal flakes on SiO 2 /Si substrates. Although anchoring effect cannot be used explain atomically flat surfaces, PVC is sufficiently strongly adhesive flake surfaces allow pickup from substrates via surface contact alone. Results test, whether possible or impossible, were plotted a map area ratio vs. edge length ratio, which allowed us identify conditions under can picked up using and discuss strengths edge. This study...
2D crystals based on transition metal dichalcogenides (TMDs) provide a unique platform of novel physical properties and functionalities, including photoluminescence, laser, valleytronics, spintronics, piezoelectric devices, field effect transistors (FETs), superconductivity. Among them, FET devices are extremely useful because voltage-tunable carrier density Fermi energy. In particular, high charge accumulation in electric double layer transistor (EDLT), which is device driven by ionic...
Few-layer transition metal dichalcogenides (TMDs) exhibit out-of-plane wave function confinement with subband quantization. This phenomenon is totally absent in monolayer crystals and regarded as resulting from a naturally existing van der Waals quantum-well state. Because the energy separation between subbands corresponds to infrared wavelength range, few-layer TMDs are attractive for their potential facilitate application of TMD semiconductors photodetectors emitters. Here, we report...