A5019553465- Ga2O3 and related materials
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Nanowire Synthesis and Applications
- Silicon and Solar Cell Technologies
- Advanced Photocatalysis Techniques
- CCD and CMOS Imaging Sensors
- Analytical Chemistry and Sensors
- Electronic and Structural Properties of Oxides
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Luminescence Properties of Advanced Materials
- TiO2 Photocatalysis and Solar Cells
- Advanced Memory and Neural Computing
- Thermal Radiation and Cooling Technologies
- Photocathodes and Microchannel Plates
- Acoustic Wave Resonator Technologies
- Semiconductor Quantum Structures and Devices
- Metal and Thin Film Mechanics
- Mass Spectrometry Techniques and Applications
National Sun Yat-sen University
2019-2025
Feng Chia University
2015-2019
ORCID
2017
National Cheng Kung University
2011-2014
This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O ) oxidation technique which demonstrates the advantages simplicity and cost effectiveness. A 13-nm-thick Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> oxide was grown upon surface AlGaN barrier...
This paper presents growing amorphous, anatase, rutile, and mixed phases titanium dioxide (TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) thin films by mist chemical vapor deposition post annealing techniques. The temperature affects crystal structures of the TiO significantly. X-ray diffraction Raman spectra are used to characterize films. photoelectron spectroscopy is analyze composition film. optical characteristics, including...
This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with aluminum oxide (Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) to serve as a passivation layer and sensing membrane at the same time. Al was deposited by ultrasonic spray pyrolysis deposition (USPD) method. It found that ISHFET showed higher sensitivity of...
This brief reports, for the first time, an oxide passivated AlGaN/GaN high electron mobility transistor by using hydrogen peroxide (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O ) treatment. Characterizations spectroscopy chemical analysis and transmission microscopy have been performed to verify formation of surface on AlGaN barrier layer. The present design has demonstrated superior improvements 41% in maximum drain/source...
This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O ) oxidation technique. Aluminum oxide (AlO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> was formed on the surface of AlGaN barrier as gate dielectric MOS-gate structure. By capacitance-voltage measurement, constant (κ)...
This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O ) oxidation technique is adopted to complete the passivation. results of chemical analysis suggest that Al Ga dangling bonds react oxygen atoms. process effectively reduces side-wall surface states, which also suppress dark current 11 pA. In...
This paper investigates the temperature-dependent performances of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The gate dielectric layer and surface passivation are formed by H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O oxidation technique. quality is estimated breakdown electric field (EBD) low-frequency noise. capacitance-voltage (C-V) hysteresis characteristics MOS Schottky diodes at 300/480...
Comparative studies for TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -passivated Al xmlns:xlink="http://www.w3.org/1999/xlink">0.25</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.75</sub> N/GaN heterostructure FETs (HFETs) and -dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances obtained by tuning the layer thickness of to 20 nm. High relative...
This paper uses nonvacuum ultrasonic spray pyrolysis deposition method to grow TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> for ultraviolet (UV) detection. The analyses of the materials like X-ray photoelectron spectroscopy, diffraction, and photoluminescence were investigated. 600 °C annealing temperature is optimum condition obtain anatase . metal-semiconductor- metal (MSM) photodetectors (PDs) with 3-, 5-, 7-, 10-μm finger...
This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as the gate dielectric layer. The proposed device reveals threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ) of +2.3 V and maximum drain current (I...
This paper uses H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O oxidation technique to grow Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> on AlGaN/GaN heterostructure. The -grown-Al is served as a sensing membrane and surface passivation layer. contact angle of the ion-sensitive field-effect transistor (ISFET) with improved from 66.5° 40.6° this phenomenon indicates that hydrophile characteristic after treatment. drain-source...
This study demonstrates an amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistor (TFT) using ultrasonic spray pyrolysis deposition (USPD) method. X-ray diffraction, photoelectron spectroscopy, Tauc plot, and photoluminescence spectrum are used to confirm the crystal structure, oxygen contents, energy bandgap, existence of deficiencies. Besides, these material characteristics compared with a sputter-deposited ITZO film. The TFT based on USPD-deposited shows better electrical...
This letter demonstrates an integration process of in situ Cl <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> doped Al <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The thin film is deposited by ultrasonic spray pyrolysis deposition characterized transmission electron microscopy X-ray...
Anatase and rutile TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) are fabricated investigated. The thin films grown by the ultrasonic spray pyrolysis deposition annealed at 400°C 800°C to form anatase phases. material characteristics were measured X-ray diffraction, Raman spectrum, photoelectron spectroscopy, photoluminescence. optical such as refractive index,...
Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMTs) grown on Si substrates by using ozone water oxidation method are investigated. Superior improvements of 52.2% in two-terminal gate-drain breakdown voltage (BV xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> ), 30.3% drain-source current density (I...
This paper proposes the H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O oxidation technique to grow Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as surface passivation layer of metal-semiconductor-metal ultraviolet (UV) photodetector (PD). The dark current -grown-Al -passivated PD was reduced from 104 4.43 nA. leakage 65.7 nA/1.67 μA 0.46 nA/0.5 nA in dark/under illumination. It found that ~35% photocurrent results leakage....
This letter demonstrates and investigates AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) with a cost-effective wet oxidation technique. The H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O technique is adopted to grow an insulator layer. material qualitative semiquantitative analyses of the -grown aluminum oxide are studied by energy dispersive X-ray spectroscopy performances present MIS-UV-PD different...
In this letter, non-vacuum ultrasonic spray pyrolysis deposition was used to grow Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiO thin film as the metal-insulator-semiconductor-insulator-metal ultraviolet photodetector (MISIM UV PD). The anatase TiO with 400 °C annealing active layer of PD. X-ray diffraction and Raman spectra were characterize crystal phase . MISIM PD has lower...
This letter demonstrates an all-transparent ZnO-based phototransistor on which fluorine-doped tin oxide, magnesium zinc and aluminum-doped oxide thin films are deposited by mist atmospheric pressure chemical vapor deposition. is designed for ultraviolet detection can be illuminated from either the front or backside. By comparing device characteristics, backside illumination exhibits better performance. The able to operated in high ultraviolet-to-visible rejection ratio/fast response mode. In...
This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as the passivation layer of GaN light-emitting diodes (LEDs). The composition is analyzed by X-ray photoelectron spectroscopy. refractive index and transmittance USP-grown are investigated. thickness determined be 70 nm, which close optimum from antireflection theorem...
The Mg <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Zn xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> O thin films with Mg/Zn mole fraction of 0.1/0.9, 0.2/0.8, and 0.3/0.7 were deposited by the ultrasonic spray pyrolysis deposition method. X-ray diffraction, photoelectron spectroscopy, Raman used to analyze material characteristics, including crystal structures, orientations, chemical qualitative, quantitative characteristics....