A5047124279- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Metal and Thin Film Mechanics
- Nanofabrication and Lithography Techniques
- Anodic Oxide Films and Nanostructures
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Graphene research and applications
- Silk-based biomaterials and applications
- Ga2O3 and related materials
Chulalongkorn University
2020-2022
Linköping University
2020
The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing MOCVD processes on epitaxial graphene.
Appearance of luminescent centers with narrow spectral emission at room temperature in nanometer thin AlN is reported.
Effects of Al addition on a structural phase modification in AlGaN/GaN films GaAs substrate grown by MOVPE have been investigated. To examine the effect addition, were with varied molar flow ratio TMAl to total group-III elements 0, 0.15, and 0.30. Quantity hexagonal incorporation was evaluated ratios integrated XRD intensity plane cubic from reciprocal space mappings. The diffraction geometry factor considered calculation. results suggest that GaN primarily contains small fraction (15%)....