A5020964017- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Electronic and Structural Properties of Oxides
- Management, Economics, and Public Policy
- Smart Cities and Technologies
- Consumer Attitudes and Food Labeling
- Legal, Health, Environmental and COVID-19 Challenges
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- Protein Hydrolysis and Bioactive Peptides
- ZnO doping and properties
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IMEC
2021-2024
University of Padua
2018-2021
Abstract-This letter experimentally demonstrates 1.2 kV normally-off p-GaN gate lateral high-electronmobility transistors (HEMTs) on 200 mm diameter engineered substrates. The fabricated HEMT with optimum gate-drain spacing exhibits a threshold voltage (Vth) of 3.2 V, an ON/OFF ratio 108, low specific ON-resistance (Ron,sp) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.8 \mathrm{~m}...
In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A detailed investigation process split geometry dependency is done. From study, propose that parasitic sidewall transistor present, which cause for degradation in gate. The has been substantiated TCAD simulation also novel method consisting EBIC measurements directly applied on cross section Based analysis...
We present a detailed investigation of the trapping and detrapping mechanisms that take place in gate region β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> vertical finFETs describe related processes. This analysis is based on combined pulsed characterization, transient measurements, tests carried out under monochromatic light, with photon energies between 1.5 5 eV. The original...
This paper investigates the trapping mechanisms in gate-injection transistors (GITs) without and with a pdrain electrode, referred to as GITs Hybrid-Drain-embedded (HD-GITs), respectively, used inject holes reduce charge effects. We compare two sets of devices under both OFF-state semi-ON state, investigate role hot electrons favoring trapping. The analysis is based on combined pulsed characterization, transient measurements, electroluminescence (EL) characterization. demonstrate following...
The forward bias gate leakage current and breakdown voltage are important properties of p-GaN high-electron-mobility transistors (HEMTs). An engineered doping profile in the layer results a higher lower current. use such technique puts additional requirements on compact models that used for these HEMTs. accurate model is needed, which considers change devices. This article reviews relationship between drops at different junctions structure (i.e., metal/p-GaN Schottky junction p-GaN/AIGaN/GaN...
This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices passive components further supports the GaN ICs platform. These results significantly contribute to monolithic integration for create key opportunities...
For the first time, we demonstrate and investigate avalanche capability in vertical GaN-on-GaN pn diodes with polarization doping. Specifically: (i) prove that analyzed devices have capability, describe dependence of breakdown voltage leakage on temperature monochromatic illumination; (ii) presence walkout, i.e. a recoverable increase induced by stress conditions; (iii) time-dependence walkout as function temperature, is caused charge trapping due to residual carbon; (iv) calculate related...
GaN-on-GaN vertical devices are expected to find wide application in power electronics, thanks the high current densities, low on-resistance and breakdown voltage. So far, only few papers on reliability of have been published literature. This paper investigates degradation pn diodes submitted stress at density. The study was carried out by means electrical characterization electroluminescence (EL) measurements. We demonstrate that: (i) when density, show significant changes characteristics:...
We demonstrate the avalanche capability and existence of breakdown walkout in GaN-on-GaN vertical devices with polarization doping.By means combined electrical optical characterization, we following original results: 1) p-n junctions doping have capability; 2) stress regime induces an increase voltage, referred to as walkout; 3) this process is fully-recoverable, thus being related a trapping mechanism; 4) temperature-dependent measurements identify C N defects responsible for process; 5)...
We investigate the dc, electroluminescence (EL) and trapping properties of gate-injection transistors without with pdrain terminal connected to drain (called GITs HD-GITs respectively) field-plate. Our results indicate that: (i) dc characteristics are not influenced by presence field plate; (ii) EL measurements that have comparable hot-electron density energy. (iii) When submitted OFF-state, all devices show similar dynamic-RON, independently (iv) on other hand, under semi-ON conditions...
We demonstrate that the residual carbon concentration in drift region can have a significant impact on reverse leakage, breakdown voltage, and stability of GaN-on-GaN vertical diodes. Two generations (Gen1, Gen2) polarization-doped p-n junctions with different C concentrations were compared, terms avalanche instability, deep-level concentration. The original results collected within this paper show that: 1) both devices safely reach regime; diodes lower <sub...
This paper shows that vertical GaN-on-GaN p-i-n diodes are able to withstand long-term operation in moderate avalanche conduction regime, thus proving the excellent stability of gallium nitride material system. Under constant stress stronger devices show a significant increase series resistance, slight forward voltage and measurable voltage. Degradation is ascribed generation defects, process which likely occurring intrinsic region. The time-dependence performance loss explained by...
Alpha-galactosidase (α-Gal) is an enzyme responsible for the hydrolyzation of glycolipids and glycoprotein commonly found in dietary sources. More than 20% general population suffers from abdominal pain or discomfort caused by intestinal gas indigested partially digested food residuals. Therefore, α-Gal used supplements to reduce gases help complex digestion. Marketed enzyme-containing must be produced accordance with Food Drug Administration (FDA) regulations Current Good Manufacturing...
In this paper the reliability of vertical GaN-on-Si stack for lateral p-GaN HEMTs dedicated to low-voltage applications is discussed in detail by comparing wafers with different buffer thicknesses and growth condition AlN nucleation layer. The robustness time-dependent breakdown will be investigated detail, demonstrating that buffers reduced thickness are suitable 100 V applications. Moreover, voltage drop on layers extracted at breakdown, a model able explain degradation proposed.
This paper reviews the most relevant mechanisms responsible for degradation of GaN-based lateral and vertical electron devices. These components are almost ideal application in power electronics, but presence semiconductor defects existence processes may limit their stability lifetime. In this we focus on following aspects: (i) induced by off-state conditions leading to a time-dependent and/or catastrophic breakdown devices; (ii) gate stack; (iii) electrical performance GaN transistors...
In this paper, we analyze the threshold voltage stability of beta-Ga<sub>2</sub>O<sub>3</sub> FinFETs for power applications using Al<sub>2</sub>O<sub>3 </sub>as gate insulator. dynamic characterization measurements, when filling bias condition is moved from off-state to on-state a positive shift induced, caused by trapping electrons in insulator or at interface with semiconductor. The variation was found be stable rest condition, but illumination 280 nm UV light able slowly recover even...