Wide band-gap (WBG) field-effect devices are known to provide a system-level performance benefit compared silicon when integrated into power electronics applications. However, the near-ideal features of these switching can also introduce unexpected behavior in practical systems due presence parasitic elements. The occurrence self-sustained oscillation is one such that has not received adequate study literature. This paper provides an analytical treatment this phenomenon by casting circuit as...

As awareness of human footprint grows, solutions are investigated to reduce greenhouse gas emissions (GHG). To the carbon intensity electricity production, a massive deployment renewable energy sources (RESs) has become mandatory goal. A significant challenge behind RESs is frequency regulation such systems due high penetration inverters based on storage (ESS). overcome this issue, manuscript proposes, as main contribution, use virtual inertia emulator-based model predictive control. MPC an...

Owing to their very low intrinsic capacitance and on-resistance, silicon carbide FETs have been shown produce poor dynamics in certain power electronics applications, particularly those based on the half-bridge configuration. This letter catalogs three separate phenomena that are observed context of such applications provides a detailed treatment most troublesome these behaviors: occurrence sustained oscillation at switch turn-off. behavior is analyzed established oscillator design theory;...

This paper describes the development of a dedicated electromagnetic interference (EMI) characterization platform for evaluation wide bandgap-based converters in ungrounded architectures type likely to be employed on future shipboard systems. is designed support wide-bandgap-based operating at switching frequencies hundreds kilohertz; with power levels up 100 kVA and expected emissions MHz. To illustrate capabilities this platform, conducted SiC-based half-bridge converter are evaluated (with...

The hybrid electric vehicle (HEV) offers superior fuel economy (FE) compared to the conventional counterpart; yet, it is costlier. To optimize an HEV design, both energy storage cost-one of major contributors in overall cost-and FE are often set as objective functions optimization processes. techniques applied manage power flow between powertrain sources and sinks significantly affect results this optimization. In paper, advanced bandwidth-based control strategy teamed up with a duty ratio...

This paper describes a new parameter estimation algorithm for well-recognized electrical analogue battery model. The limited bandwidth characteristic of the model is introduced and discussed, on which built. While real system non-linear time variant, truncated representation provided by commonly studied non-physical "electrical analogue" However, often overlooked. proposed starts assessing desired application, followed modeling according to application bandwidth, then estimating parameters...

The twin goals of maximizing fuel economy (FE) and improving consumer acceptance by reducing the cost energy storage system (ESS) in a series hybrid electric vehicle (SHEV) powertrain is addressed here using as means for filtering drive-cycle power demands on engine, rather than an source supplying all-electric drive mode. concept intended to minimize, if not eliminate, battery SHEV without resorting full-range proportional control engine generator. An initial optimization study reported...

Conventional wisdom that the SiC JFET is only a normally on device has recently been superseded by first practical off JFET. This new true enhancement mode, three-terminal, pure-SiC design provides designers with solution retains all benefits of With simple change in series gate impedance, EM can be used common IC drivers and drop-in replacement for current silicon power devices most applications. The characteristics are superior to MOSFETs IGBTs offer possibility efficiency improvements...

Nonlinear finite element (FE) simulations to characterize lightning‐induced thermal damage in AS4/3506 carbon/epoxy composites with metallic and nonmetallic protection layers were performed then compared those for unprotected composites. In this study, FE estimates of matrix decomposition subjected 40 kA peak currents performed. Two considered: (1) a traditional copper mesh (CM) commonly used aircraft lightning strike (2) single layer highly conductive pitch carbon fiber paper (PCFP)....

This paper reports on the development of a normally- off 4H-SiC VJFET power switch technology suitable for drop in replacement switching-mode supplies (SMPS). The fabricated devices exhibited low specific on-resistance (Ron-sp) measured at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> =1 and xmlns:xlink="http://www.w3.org/1999/xlink">Gs</sub> =2-5 V. transistors designed 800 applications had R...

Electromagnetic emissions of a 1.2kV, 120A SiC-based half-bridge switching at 100kHz that includes grounding paths and can be extended to 100kVA inverter and, eventually, systems paralleled cascaded inverters suitable for shipboard solar farm applications is studied. This pole forms the basis test platform specifically designed discover sensitivities resonant so design guidelines peripheral structures EMI mitigating components developed. Ungrounded grid-forming are considered in this work...

The D-center in 6H-SiC is a boron-related deep hole trap observed previously LPE-grown diodes. We report level transient spectroscopy (DLTS) measurements which the signature high-purity n- and p-type epitaxial layers formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV capture cross section between 1×10−14 cm2 3×10−14 was determined for this level. Even though these diodes thought to arise from unintended trace contamination, we within same diode factor twenty greater...

The conventional wisdom that the SiC JFET is a normally on device has recently been superseded by first practical off JFET. new true enhancement mode, three-terminal, pure-SiC design provides designers with solution retains all benefits of With simple change in series gate impedance, EM can be used common IC drivers and drop-in replacement for current power devices most applications. Device characteristics are superior to MOSFETs IGBTs offer possibility efficiency improvements from reduced...

Since the release of power SiC JFETs in 2008 and MOSFETs 2011, there are now more choices transistors than ever before available to industrial electronics markets. To inform prospective users, this paper surveys critical factors influencing adoption silicon carbide for a wide range applications. Citing publicly documents, analysis uses five key compare contrast viability existing transistor technologies: performance, availability, reliability, adoptability, affordability. Special attention...

Power management strategies have impacts on fuel economy, greenhouse gasses (GHG) emission, as well effects the durability of power-train components. This is why different off-line and real-time optimal control approaches are being developed. However, seems to be more attractive than because it can directly implemented for managing power energy flows inside an actual vehicle. One interesting illustration these model predictive (MPC) based algorithm. Inside a MPC, cost function optimized...

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large 30 μs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This quenched on nanosecond scale less The proven ability to turn the switch conductance and off command, high power could make this semiconductor material basis an optically controlled pulsed-power closing opening switch.

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are high dark resistivity, efficient activation Nd:YAG laser radiation, and microsecond conductivity decay time constant. In our experiment, electric fields 19 kV/cm switched, current densities up 10 kA/cm2 conducted through a closely crystal. At field strengths greater than...

This paper examines the design of an inherently safe DC-DC converter specifically for normally on silicon-carbide based power JFETs. The is targeted ambient temperatures 225 /spl deg/C. A demonstration board has been completed and tested illustrating proof principle self-biased gate driver configuration deriving a stable 5-V dc output from 25-V input. also demonstrated conventional "off-line" 120 VAC operation to develop 12 V output.

A finite element (FE) parametric study was performed to characterize the temperature‐dependence of irreversible thermal decomposition AS4/3506 carbon/epoxy composites laminates subjected simulated lightning currents 40 kA or less during 30 μs. In this study, matrix caused by considered as a primary form damage. FE simulations were conducted compare size and intensity based on fully coupled spatially temporally varying temperature/material model that we developed recently reported (Lee et...

Even though there is increasing interest in silicon carbide (SiC) JFETs, the fact that they are most commonly normally on devices intimates some designers. Therefore it important appropriate gate driver circuits also introduced to ease negative concerns associated with a device. By introducing inherently safe specially designed for SiC JFET, will be possible prove designing applications using JFETs not as complicated may think. Therefore, this paper provides follow-up previous work an...