G. Gnana Prakash

ORCID: 0000-0003-1364-9012
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Research Areas
  • Radiation Effects in Electronics
  • Electrostatics and Colloid Interactions
  • Radiation Detection and Scintillator Technologies
  • Nanofabrication and Lithography Techniques
  • Advancements in Photolithography Techniques
  • Force Microscopy Techniques and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Pickering emulsions and particle stabilization
  • Electrostatic Discharge in Electronics
  • Quantum Dots Synthesis And Properties
  • Nanocluster Synthesis and Applications
  • Advanced optical system design
  • Polymer Surface Interaction Studies
  • Copper-based nanomaterials and applications
  • Surfactants and Colloidal Systems
  • Particle Detector Development and Performance

Indian Institute of Science Bangalore
2022

Jawaharlal Nehru Centre for Advanced Scientific Research
2020

Georgia Institute of Technology
2006-2007

Indira Gandhi Centre for Atomic Research
2002

The interaction between liquid−liquid dispersion covered with polymer−surfactant complexes has been in investigated. polymer used for our investigations is poly(vinyl alcohol) and the surfactants were sodium dodecyl sulfate, cetyltrimethylammonium bromide tetradecyltrimethylammonium bromide, nonyl phenol ethoxylate (NP10). It found that magnitude onset of repulsive forces increase dramatically during association process. depends on nature surfactant interfacial properties emulsion droplet....

10.1021/la0256477 article EN Langmuir 2002-05-09

We provide experimental evidence for stretching and collapse of neutral polymer layers, already adsorbed at an oil-in-water interface, due to its interaction with surfactants. Upon stretching, the first length ($2{L}_{0}$) follows a power law dependence on surfactant concentration ($\ensuremath{\propto}{C}_{s}^{x}$, where $x\ensuremath{\approx}0.5$ cationic surfactants) collapses in presence salt, as relatively weak (${C}_{s}^{\ensuremath{-}y}$, $y=0.17$), good agreement brush decay...

10.1103/physrevlett.89.268301 article EN Physical Review Letters 2002-12-10

For the potential use in future high luminosity applications energy physics (HEP) [e.g., Large Hadron Collider (LHC) upgrade], we evaluated radiation tolerance of a candidate technology for front-end readout application-specific integrated circuit (ASIC) silicon strip detectors. The devices investigated were first-generation silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). current gain as function collector has been measured at several stages: before and after irradiation...

10.1109/tns.2006.883949 article EN IEEE Transactions on Nuclear Science 2006-12-01

Precise control of crystal orientation, and specifically the exposed surface, is critical for engineering heterostructures. Here, using CoPt as a model system, we explore energetics to expose suitable facets promote required heterostructure formation. Different heterostructures are grown ranging from core/shell structure, diffused interface, dumbbell structured dimers, embedded island structures wherein these hybrids fabricated via micro/macrolevel facet-selective growth. The reaction...

10.1021/acs.jpclett.0c01993 article EN The Journal of Physical Chemistry Letters 2020-07-30

In this work, we present a discussion on an efficient and economical 'Double Exposure' (dual exposure or multiple exposures) method to achieve lithographic pattern alignments opposite sides of various substrates (Silicon, GaN, GaAs, SiN) using Direct Writing tools single (standard) alignment marker photo mask. By exposing developing the same photoresist (PR) times, while corresponding in concert, efficiency can be significantly improved drastically reducing resource cost with no compromise...

10.1109/icee56203.2022.10117867 article EN 2022-12-11
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