In this paper, 650 V / 7.5 A rated enhancement-mode (E-mode) Gallium Nitride (GaN) high-electron-mobility-transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycles (ATC) at different junction temperature stresses. This research helps in developing fundamental insights into GaN HEMTs' aging characteristics through the degradation ten devices ATC tests. For over 20,000 cycles, forward and reverse conduction losses, <italic...

Parasitic inductances are responsible for oscillations and overshoots in the switching waveforms of SiC MOSFETs under high-frequency operations. In addition to parasitic inductance PCB board, bus-bar, device packaging, drive circuit, load used energy storage represents another source converters. Therefore, it is necessary study effect contributed by inductive loads. This paper studies effects on performance a MOSFET-based power pole (SPP) or what traditionally defined as half-bridge. The...

A 250 kW grid-connected photovoltaic (PV) plant systems have been installed at the Ministry of Electricity in Baghdad and penetrated to Iraqi national grid since November 2017. This is first high power PV system that has Iraq it's one four parts 1MW large-scale should be completed early 2019. paper presents design performance analysis this using a PVsyst software package. The ratio different losses occurred are also calculated. results show 75% 1428 panels type (Sharp 175Wp) spread over an...

A 250 kW grid-connected photovoltaic (PV) plant systems have been installed at the Ministry of Electricity in Baghdad and penetrated to Iraqi national grid since November 2017. This is first high power PV system that has Iraq it’s one four parts 1MW large-scale should be completed early 2019. paper presents design performance analysis this using a PVsyst software package. The ratio different losses occurred are also calculated. results show 75% 1428 panels type (Sharp 175Wp) spread over an...

Gallium Nitride (GaN) FET devices are becoming very popular in the power industry due to their fast switching characteristics and benefits associated with high frequency operation. The device degradation process of GaN plays vital role characterizing reliability. Thermal cycling is one accelerated reliability assessment processes that involves heating by passing current up a maximum temperature cooling it either naturally or forcefully. Precise identification junction crucial avoid thermal...

This paper presents the design and experiments of a SiC power MOSFET-based bidirectional switching pole (BSPP) by benefiting from advantages MOSFETs: high-speed switching, high density, low losses. The goal work is to printed circuit board (PCB) traces BSPP with minimum parasitic inductance balanced transient performance between high-side low-side MOSFETs. With such traces, it possible reach best A prototype MOSFETs was developed tested. simulation model built using Cadence tools....

&lt;span&gt;A single-stage symmetrical high voltage gain half-bridge (HB) DC-AC converter is proposed in this paper. Using two Y-source impedance networks, the following key features are utilized from topology: single stage inverter with very compared to conventional HB inverter, output waveform, low stress across passive components because it distributed and only switching devices needed for converter. Furthermore, important merit of topology that current drawn by Y-coupled inductors around...

This paper presents two improved circuit breaker (CB) topologies based on resonant networks for medium voltage DC (MVDC) applications, such as shipboard power distribution and subsea oil gas production. The feature simple LC that efficiently suppress fault current in just a few tens of microseconds, making them suitable integration with existing solid-state or hybrid CB. Moreover, they also help to minimize the CB energy reduce (if not eliminate) requirement protection devices like surge...

With the growing interest in renewable energy resources, a various number of studies and development for photovoltaic (PV) systems have investigated to satisfy global needs energy. The larger PV resources has increased request suitable apparatus with which test systems. This paper deals design an indoor source emulator using actual panel facilitate system testing under real environment conditions. A low-cost Arduino Mega256 microcontroller-based data acquisition (DAQ) approach been developed...

This paper presents the investigation of effects Silicon-Carbide Schottky Barrier Diodes (SiC SBDs) on switching transient performance a SiC MOSFETs-based Bidirectional Switching Power Pole (BSPP). The was focused contribution SBDs in reducing overshoot drain current when they are connected as freewheeling diodes. A double pulse test (DPT) is used to measure transients MOSFETs at room temperature. To verify practical analysis, simulation circuit BSPP designed by using Cadence tools....

The electrification of transportation, including off-highway vehicles (OHVs), is advancing, offering benefits such as lower emissions, decreased noise, and enhanced efficiency. This paper delivers an extensive overview electric (EVs) across various segments, passenger cars, trucks, OHVs, discussing significant technological progress, market dynamics, upcoming trends. It underscores the primary advantages EVs their adaptability for different OHV applications like construction, mining,...

This paper presents a thermal modeling technique for 650 V / 7.5 A GaN HEMTs under accelerated cycling (ATC) tests. The validates the limitations caused by slow response of commercial sensors (i.e., thermistor) used monitoring junction temperatures (T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</inf> ) HEMT devices test (DUTs) in wide proposed utilizes experimental results captured during runaway scenario to analyze non-linear dissipated...

The rapid advancement of power Gallium Nitride (GaN) devices is making them an attractive option in the industry to achieve high density and efficiency. However, their reliability has been a concern for industry, primarily since these have used commercially only few years. Hence, this paper presents method remaining useful lifetime (RUL) prediction GaN-based converter system real-time. Considering most critical parts failure converters are GaN capacitors, experimental degradation data 10...

This paper proposes Z-source-based isolated DC-DC building blocks with voltage gain boosting and fault tolerance capability. A modified Z-source impedance network along a dc-dc dual active bridge (DAB) represents the main parts of proposed topology. In addition to feature, operation introduced by integrating simple controller network. Three operating conditions are investigated: shoot-through (ST) non-shoot through (NST) as conventional for impedance-based power converters, handling...

This paper presents a power factor analysis of high-frequency transformer (HF) in the DC-DC bidirectional dual active bridge (BDAB). The is analyzed based on three modulation techniques: conventional phase shift (PSM), triangular current (TriCM), and trapezoidal (TrpCM). shows that HF suffers from poor under PSM operating condition compared to both TriCM TrpCM techniques. Poor another meaning low efficiency high loss. On other side, voltage operation range converter limited switching control...

Emrging DC grids, including microgrids, incorpo-rate multiple conversion units for distributed energy resources (DERs such as photovoltaics, wind, and batteries) connected to different loads (passive active). Consequently, future grids' resilience real-time health must be continually assessed. This paper presents an embedded Prognostic Health Monitoring (PHM) control approach associated with the grid power units, which enables progressive crosstalk between converters at nodes evaluate grid's...

This paper presents an improved on-state resistance (RDS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> ) measurement scheme for high and low-side GaN FETs, which is critical reliable precise assessment of HEMT power devices' lifetime degradation patterns. The proposed circuit based on active voltage clamp using Si MOSFET Schottky Zener diodes. features lower parasitic inductances capacitances by replacing the with e-mode FET....

Long-term reliability testing of E-mode Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) under accelerated thermal cycling can take several months to a few years, depending on the profile, including device's junction temperature window. This paper presents an H-bridge-based experimental setup for GaN HEMTs' testing, which aims significant reduction in energy consumption (about 90%) compared load power and allows implementation two windows per H-bridge FETs as well operating...