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Research Areas
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
Institute for Energy Technology
2014
Neutron and X-ray reflectometry were used to determine the layer structure hydrogen content of thin films amorphous silicon (a-Si:H) deposited onto crystalline (Si) wafers for surface passivation in solar cells. The combination these two techniques is well suited non-destructive probing a-Si:H due being able probe buried interfaces having sub-nanometer resolution. also unique its ability allow determination density gradients light elements such as (H). neutron scattering contrast between Si...
10.1063/1.4904340
article
EN
Applied Physics Letters
2014-12-08
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