About
Contact & Profiles
A5050008618
Research Areas
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Luminescence Properties of Advanced Materials
- Radiation Detection and Scintillator Technologies
- Radiation Effects in Electronics
- Silicon Nanostructures and Photoluminescence
- Chalcogenide Semiconductor Thin Films
- Particle Detector Development and Performance
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Silicon and Solar Cell Technologies
- Advanced Memory and Neural Computing
Bolu Abant İzzet Baysal University
2017-2020
10.1016/j.radmeas.2025.107426
article
EN
Radiation Measurements
2025-04-01
10.1016/j.nimb.2019.03.013
article
EN
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
2019-03-13
10.1016/j.sna.2017.02.022
article
EN
Sensors and Actuators A Physical
2017-02-21
10.1007/s10854-017-7241-7
article
EN
Journal of Materials Science Materials in Electronics
2017-06-02
10.1016/j.mee.2020.111409
article
EN
Microelectronic Engineering
2020-08-01
10.1007/s10854-018-9029-9
article
EN
Journal of Materials Science Materials in Electronics
2018-04-04
10.2139/ssrn.4869840
preprint
EN
2024-01-01
In the development of radiation sensors based on MOSFET devices, process enhancing gate dielectric response should be considered, as is a sensitive area.In this study, optical and electrical characteristics fabricated three-layered Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors for were comprehensively investigated.MOS with 15 nm thin SiO2, 25 Eu2O3, 110 thick Er2O3 stacked oxide layers grown n-Silicon substrate by thermal oxidation electron beam evaporation systems, respectively.The aluminum...
10.37392/rapproc.2020.08
article
EN
RAP Conference Proceedings
2020-01-01
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