Shuqi Zheng

ORCID: 0000-0003-1549-8000
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About
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Research Areas
  • Advanced Thermoelectric Materials and Devices
  • Hydrogen embrittlement and corrosion behaviors in metals
  • Corrosion Behavior and Inhibition
  • Chalcogenide Semiconductor Thin Films
  • Thermal properties of materials
  • Thermal Radiation and Cooling Technologies
  • Material Properties and Failure Mechanisms
  • Fatigue and fracture mechanics
  • Heusler alloys: electronic and magnetic properties
  • Quantum Dots Synthesis And Properties
  • Thermal Expansion and Ionic Conductivity
  • Nuclear Materials and Properties
  • Concrete Corrosion and Durability
  • Industrial Gas Emission Control
  • High-Temperature Coating Behaviors
  • 2D Materials and Applications
  • Non-Destructive Testing Techniques
  • nanoparticles nucleation surface interactions
  • Intermetallics and Advanced Alloy Properties
  • Phase-change materials and chalcogenides
  • Microstructure and Mechanical Properties of Steels
  • Catalytic Processes in Materials Science
  • Thermodynamic and Structural Properties of Metals and Alloys
  • Perovskite Materials and Applications
  • Minerals Flotation and Separation Techniques

China University of Petroleum, Beijing
2015-2024

Shanghai University of Medicine and Health Sciences
2024

University of Shanghai for Science and Technology
2014-2024

Zhejiang A & F University
2024

Ministry of Agriculture and Rural Affairs
2024

Beijing Academy of Agricultural and Forestry Sciences
2022

State Council of the People's Republic of China
2016-2019

Harbin Engineering University
2019

Second Affiliated Hospital of Xi'an Jiaotong University
2007

Chinese Academy of Sciences
2006

Incorporating donor doping into Mg3Sb1.5Bi0.5 to achieve n-type conductivity is one of the crucial strategies for performance enhancement. In pursuit higher thermoelectric performance, we herein report co-doping with Te and Y optimize properties Mg3Sb1.5Bi0.5, achieving a peak ZT exceeding 1.7 at 703 K in Y0.01Mg3.19Sb1.5Bi0.47Te0.03. Guided by first-principles calculations compositional design, find that Te-doping shifts Fermi level conduction band, resulting semiconductor behavior, while...

10.1021/acsnano.3c09926 article EN ACS Nano 2024-01-02

A high <italic>zT</italic> value of 1.54 at 1200 K in p-type RuTaSb is obtained due to the low band effective mass.

10.1039/c6cp07897d article EN Physical Chemistry Chemical Physics 2017-01-01

The maximum <italic>ZT</italic> of n-type Mg<sub>3</sub>Sb<sub>2</sub> can be up to 3.1.

10.1039/c7cp08680f article EN Physical Chemistry Chemical Physics 2018-01-01

By optimizing the concentration of substitutional defect Pr<sub>Mg1</sub>, Mg<sub>3.2</sub>Pr<sub>0.02</sub>Sb<sub>1.5</sub>Bi<sub>0.5</sub> exhibits a peak <italic>zT</italic> value 1.70 at 725 K.

10.1039/c9ta06889a article EN Journal of Materials Chemistry A 2019-01-01

Mg3+δX2 (X = Sb, Bi) based Zintl phases possess characteristics, such as non-toxicity, cost-effectiveness, ease of fabrication, and a wide range working temperatures, showing high thermoelectric potential n-type material. However, there exists relative research gap in understanding the underlying mechanisms behind improving their performance through doping, corresponding influence on micro/nanostructures materials. Here, guided by first-principles calculations, we design...

10.1016/j.cej.2024.149051 article EN cc-by-nc-nd Chemical Engineering Journal 2024-01-26

Extensive attention has been focused on thermoelectric performance optimization of SnTe because its potential in waste heat recovery. Here, we fabricate high Se/Cd codoped octahedral particles by microwave-stimulated solvothermal method. The SnTe-based have sizes ranging from several micrometers to hundreds nanometers, forming dense bulks after spark plasma sintering. Combined with the strong point defect scattering Se and Cd dopants, a low thermal conductivity 1.8 W m-1 K-1 at 773 K is...

10.1021/acsami.7b06083 article EN ACS Applied Materials & Interfaces 2017-06-22

Pristine GeTe shows promising thermoelectric performance but is limited by the high carrier concentration (nH) from Ge vacancies and thermal conductivity. Herein, Cu/Sb was chosen as codopants to suppress nH decrease In this condition, a zT of ∼1.62 under 773 K acquired in Ge0.85Te(CuSb)0.075 system proposed paper/work. Results show that dopant increases, power factor rises due reduction ∼1 × 1020 cm–3. Apart this, total conductivity also declines ∼7.4 W m–1 K–1 ∼1.59 originating an ultralow...

10.1021/acsaem.8b02213 article EN ACS Applied Energy Materials 2019-03-25

Unchanged <italic>S</italic><sup>2</sup><italic>σ</italic>/<italic>τ</italic> with increasing <italic>n</italic> indicates that further can't improve the when reaches ∼2.6 × 10<sup>21</sup> cm<sup>−3</sup>.

10.1039/c5ra23091h article EN RSC Advances 2016-01-01

Non-toxic and earth-abundant pyrite (FeS2) is a promising photoelectric material for solar energy conversion storage. In this study, an efficient FeS precursor was employed to synthesise successfully various shapes of FeS2, such as nanopolyhedra, nanocubes, nanooctahedra, irregular nanocrystals via simple hydrothermal method by adjusting the reaction conditions. Pyrite FeS2 nanopolyhedra nanocubes were synthesised using single iron source thiourea (NH2CSNH2) sulphur at temperatures....

10.1039/c6ce01203e article EN CrystEngComm 2016-01-01
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